BUK9880-55A/CU,115
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Nexperia USA Inc. BUK9880-55A/CU,115

Manufacturer No:
BUK9880-55A/CU,115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BUK9880-55A - N-CHANNEL TRENCHMO
Delivery:
Payment:
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Product Introduction

Overview

The BUK9880-55A/CU,115 is a high-performance N-Channel TrenchMOS transistor manufactured by Nexperia USA Inc. This device is part of the BUK9880 series and is designed for a wide range of applications requiring high efficiency and reliability. The transistor features a logic level gate drive, making it suitable for use in various electronic systems where low power consumption and high switching speeds are critical.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)55V
ID (Continuous Drain Current)7A
RDS(on) (On-State Drain-Source Resistance)73
VGS(th) (Gate-Source Threshold Voltage)1-2V
Ptot (Total Power Dissipation)8W
Tj (Junction Temperature)-55 to 150°C
PackageSOT-223-3

Key Features

  • Logic level gate drive for easy interface with microcontrollers and other logic circuits.
  • Low on-state resistance (RDS(on)) of 73 mΩ, ensuring minimal power loss during operation.
  • High continuous drain current (ID) of 7 A, suitable for applications requiring significant current handling.
  • Compact SOT-223-3 package, ideal for space-constrained designs.
  • Wide junction temperature range (-55°C to 150°C), enhancing reliability in various environmental conditions.

Applications

  • Power switching and power management in consumer electronics.
  • Motor control and drive systems.
  • Automotive systems, including battery management and power distribution.
  • Industrial control and automation.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the BUK9880-55A/CU,115?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating of this transistor?
    The continuous drain current (ID) is 7 A.
  3. What is the on-state drain-source resistance (RDS(on)) of this device?
    The on-state drain-source resistance (RDS(on)) is 73 mΩ.
  4. What is the gate-source threshold voltage (VGS(th)) range for this transistor?
    The gate-source threshold voltage (VGS(th)) range is 1-2 V.
  5. What is the total power dissipation (Ptot) of the BUK9880-55A/CU,115?
    The total power dissipation (Ptot) is 8 W.
  6. What is the junction temperature range for this device?
    The junction temperature range is -55°C to 150°C.
  7. What package type is used for the BUK9880-55A/CU,115?
    The package type is SOT-223-3.
  8. Is the BUK9880-55A/CU,115 suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its robust specifications and wide temperature range.
  9. Can the BUK9880-55A/CU,115 be used in renewable energy systems?
    Yes, it can be used in renewable energy systems such as solar and wind power inverters.
  10. Is the BUK9880-55A/CU,115 compatible with microcontrollers?
    Yes, it features a logic level gate drive, making it compatible with microcontrollers and other logic circuits.

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