BF821,235
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Nexperia USA Inc. BF821,235

Manufacturer No:
BF821,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 300V 0.05A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF821,235 is a Bipolar Junction Transistor (BJT) produced by Nexperia USA Inc. This PNP transistor is designed for a variety of electronic applications, offering a balance of high voltage, current, and frequency performance. It is packaged in a surface mount TO-236AB configuration, making it suitable for modern electronic designs that require compact and efficient components.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vceo)300 V
Collector Current (Ic)50 mA
Gain Bandwidth Product (fT)60 MHz
Power Dissipation (Pd)250 mW
Collector-Emitter Saturation Voltage (Vce(sat))800 mV
Package TypeSurface Mount TO-236AB

Key Features

  • High collector-emitter voltage of 300 V, making it suitable for high-voltage applications.
  • Collector current of 50 mA, providing adequate current handling for various circuits.
  • Gain bandwidth product of 60 MHz, ensuring good high-frequency performance.
  • Low power dissipation of 250 mW, contributing to energy efficiency.
  • Compact surface mount TO-236AB package, ideal for space-constrained designs.

Applications

The BF821,235 transistor is versatile and can be used in a range of applications, including:

  • Amplifier circuits requiring high voltage and current handling.
  • Switching circuits where high frequency performance is necessary.
  • Audio and signal processing circuits.
  • Automotive and industrial control systems.
  • General-purpose electronic designs where a reliable PNP transistor is required.

Q & A

  1. What is the collector-emitter voltage of the BF821,235 transistor? The collector-emitter voltage (Vceo) is 300 V.
  2. What is the collector current rating of the BF821,235? The collector current (Ic) is 50 mA.
  3. What is the gain bandwidth product (fT) of the BF821,235? The gain bandwidth product (fT) is 60 MHz.
  4. What is the power dissipation (Pd) of the BF821,235? The power dissipation (Pd) is 250 mW.
  5. What is the package type of the BF821,235? The package type is surface mount TO-236AB.
  6. What is the collector-emitter saturation voltage (Vce(sat)) of the BF821,235? The collector-emitter saturation voltage (Vce(sat)) is 800 mV.
  7. In what types of applications is the BF821,235 commonly used? It is commonly used in amplifier circuits, switching circuits, audio and signal processing circuits, automotive and industrial control systems, and general-purpose electronic designs.
  8. Is the BF821,235 suitable for high-frequency applications? Yes, with a gain bandwidth product of 60 MHz, it is suitable for high-frequency applications.
  9. What are the benefits of using the BF821,235 in electronic designs? It offers high voltage and current handling, good high-frequency performance, and low power dissipation, making it a reliable choice for various electronic designs.
  10. Where can I purchase the BF821,235 transistor? You can purchase the BF821,235 transistor from electronic component distributors such as Digi-Key, Mouser Electronics, and other authorized suppliers.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):50 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:800mV @ 5mA, 30mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 25mA, 20V
Power - Max:250 mW
Frequency - Transition:60MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BF821,235 BF824,235 BF820,235 BF821,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP PNP NPN PNP
Current - Collector (Ic) (Max) 50 mA 25 mA 50 mA 50 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 30 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 5mA, 30mA - 600mV @ 5mA, 30mA 800mV @ 5mA, 30mA
Current - Collector Cutoff (Max) 10nA (ICBO) 50nA (ICBO) 10nA (ICBO) 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA, 20V 25 @ 4mA, 10V 50 @ 25mA, 20V 50 @ 25mA, 20V
Power - Max 250 mW 250 mW 250 mW 250 mW
Frequency - Transition 60MHz 450MHz 60MHz 60MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB

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