Overview
The BF821,235 is a Bipolar Junction Transistor (BJT) produced by Nexperia USA Inc. This PNP transistor is designed for a variety of electronic applications, offering a balance of high voltage, current, and frequency performance. It is packaged in a surface mount TO-236AB configuration, making it suitable for modern electronic designs that require compact and efficient components.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | PNP Bipolar Junction Transistor (BJT) |
Collector-Emitter Voltage (Vceo) | 300 V |
Collector Current (Ic) | 50 mA |
Gain Bandwidth Product (fT) | 60 MHz |
Power Dissipation (Pd) | 250 mW |
Collector-Emitter Saturation Voltage (Vce(sat)) | 800 mV |
Package Type | Surface Mount TO-236AB |
Key Features
- High collector-emitter voltage of 300 V, making it suitable for high-voltage applications.
- Collector current of 50 mA, providing adequate current handling for various circuits.
- Gain bandwidth product of 60 MHz, ensuring good high-frequency performance.
- Low power dissipation of 250 mW, contributing to energy efficiency.
- Compact surface mount TO-236AB package, ideal for space-constrained designs.
Applications
The BF821,235 transistor is versatile and can be used in a range of applications, including:
- Amplifier circuits requiring high voltage and current handling.
- Switching circuits where high frequency performance is necessary.
- Audio and signal processing circuits.
- Automotive and industrial control systems.
- General-purpose electronic designs where a reliable PNP transistor is required.
Q & A
- What is the collector-emitter voltage of the BF821,235 transistor? The collector-emitter voltage (Vceo) is 300 V.
- What is the collector current rating of the BF821,235? The collector current (Ic) is 50 mA.
- What is the gain bandwidth product (fT) of the BF821,235? The gain bandwidth product (fT) is 60 MHz.
- What is the power dissipation (Pd) of the BF821,235? The power dissipation (Pd) is 250 mW.
- What is the package type of the BF821,235? The package type is surface mount TO-236AB.
- What is the collector-emitter saturation voltage (Vce(sat)) of the BF821,235? The collector-emitter saturation voltage (Vce(sat)) is 800 mV.
- In what types of applications is the BF821,235 commonly used? It is commonly used in amplifier circuits, switching circuits, audio and signal processing circuits, automotive and industrial control systems, and general-purpose electronic designs.
- Is the BF821,235 suitable for high-frequency applications? Yes, with a gain bandwidth product of 60 MHz, it is suitable for high-frequency applications.
- What are the benefits of using the BF821,235 in electronic designs? It offers high voltage and current handling, good high-frequency performance, and low power dissipation, making it a reliable choice for various electronic designs.
- Where can I purchase the BF821,235 transistor? You can purchase the BF821,235 transistor from electronic component distributors such as Digi-Key, Mouser Electronics, and other authorized suppliers.