BCP56T,115
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Nexperia USA Inc. BCP56T,115

Manufacturer No:
BCP56T,115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
1A, 80V, NPN, SILICON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56T,115, produced by Nexperia USA Inc., is a medium power NPN bipolar junction transistor (BJT) designed for a variety of applications requiring high reliability and performance. This transistor is part of the BCP56 series, known for its robust specifications and compliance with automotive and industrial standards.

Key Specifications

Parameter Value Unit
Collector-Base Breakdown Voltage (BVCEO) 80 V
Collector-Emitter Breakdown Voltage (BVCEO) 80 V
Emitter-Base Breakdown Voltage (BVEBO) 5 V
Continuous Collector Current (IC) 1 A
Peak Pulse Current (ICM) 2 A
Power Dissipation (Pd) 2 W
Collector-Emitter Saturation Voltage (VCE(sat)) < 0.5 V
Transition Frequency (fT) 150 MHz
Package Type SOT223

Key Features

  • High Voltage and Current Capability: The BCP56T,115 can handle up to 80V and 1A, making it suitable for medium power applications.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage (VCE(sat)) of less than 0.5V at 0.5A, which reduces power losses.
  • High Transition Frequency: With a transition frequency of 150 MHz, this transistor is suitable for high-frequency applications.
  • Compliance with Automotive Standards: The BCP56T,115 is AEC-Q101 qualified, ensuring it meets the stringent requirements of automotive applications.
  • Environmental Compliance: The transistor is totally lead-free, RoHS compliant, and free from halogen and antimony, making it an environmentally friendly choice.

Applications

  • Automotive Systems: Suitable for various automotive applications, including power management, motor control, and safety systems.
  • Industrial Control: Used in industrial control systems, such as motor drives, power supplies, and control circuits.
  • Consumer Electronics: Can be used in consumer electronics for power management and control circuits.
  • Power Supplies: Ideal for use in power supply units due to its high reliability and performance.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BCP56T,115?

    The maximum collector-emitter breakdown voltage is 80V.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current rating is 1A.

  3. What is the transition frequency of the BCP56T,115?

    The transition frequency is 150 MHz.

  4. Is the BCP56T,115 compliant with automotive standards?

    Yes, it is AEC-Q101 qualified.

  5. What is the package type of the BCP56T,115?

    The package type is SOT223.

  6. What is the power dissipation capability of this transistor?

    The power dissipation capability is 2W.

  7. Is the BCP56T,115 environmentally friendly?

    Yes, it is totally lead-free, RoHS compliant, and free from halogen and antimony.

  8. What are some typical applications of the BCP56T,115?

    It is used in automotive systems, industrial control, consumer electronics, and power supplies.

  9. What is the collector-emitter saturation voltage of the BCP56T,115?

    The collector-emitter saturation voltage is less than 0.5V at 0.5A.

  10. Can the BCP56T,115 handle high-frequency applications?

    Yes, with a transition frequency of 150 MHz, it is suitable for high-frequency applications.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCP56T,115 BCP53T,115 BCP56,115 BCP56H,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type - - NPN -
Current - Collector (Ic) (Max) - - 1 A -
Voltage - Collector Emitter Breakdown (Max) - - 80 V -
Vce Saturation (Max) @ Ib, Ic - - 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) - - 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - - 63 @ 150mA, 2V -
Power - Max - - 960 mW -
Frequency - Transition - - 180MHz -
Operating Temperature - - 150°C (TJ) -
Mounting Type - - Surface Mount -
Package / Case - - TO-261-4, TO-261AA -
Supplier Device Package - - SOT-223 -

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