BCP55-16-QX
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Nexperia USA Inc. BCP55-16-QX

Manufacturer No:
BCP55-16-QX
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
TRANS NPN 60V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP55-16-QX is a medium power NPN transistor produced by Nexperia USA Inc. It is part of the BCP55-Q series and is packaged in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. This transistor is designed for high current and high power dissipation applications, making it suitable for various electronic systems.

Key Specifications

ParameterConditionsMinTypMaxUnit
VCEO (Collector-Emitter Voltage)Open base--60V
IC (Collector Current)---1A
ICM (Peak Collector Current)Single pulse; tp ≤ 1 ms--2A
hFE (DC Current Gain)VCE = 2 V; IC = 150 mA; Tamb = 25 °C100-250-
VCE(sat) (Collector-Emitter Saturation Voltage)---500 mV-
Pd (Power Dissipation)---1.35 W-

Key Features

  • High current capability up to 1 A.
  • High power dissipation capability.
  • Three current gain selections available (BCP55-Q series).
  • Qualified according to AEC-Q101, making it suitable for automotive applications.
  • Compact SOT223 (SC-73) package with increased heatsink.

Applications

  • Linear voltage regulators.
  • Power management.
  • Low-side switches.
  • MOSFET drivers.
  • Battery-driven devices.
  • Amplifiers.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP55-16-QX transistor?
    The maximum collector-emitter voltage (VCEO) is 60 V.
  2. What is the maximum collector current of the BCP55-16-QX transistor?
    The maximum collector current (IC) is 1 A.
  3. What is the peak collector current of the BCP55-16-QX transistor?
    The peak collector current (ICM) is 2 A for a single pulse with tp ≤ 1 ms.
  4. What is the typical DC current gain (hFE) of the BCP55-16-QX transistor?
    The typical DC current gain (hFE) is between 100 and 250 at VCE = 2 V and IC = 150 mA.
  5. Is the BCP55-16-QX transistor suitable for automotive applications?
    Yes, it is qualified according to AEC-Q101 and is recommended for use in automotive applications.
  6. What is the package type of the BCP55-16-QX transistor?
    The transistor is packaged in a SOT223 (SC-73) surface-mounted device (SMD) plastic package.
  7. What are some common applications of the BCP55-16-QX transistor?
    Common applications include linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.
  8. What is the maximum power dissipation of the BCP55-16-QX transistor?
    The maximum power dissipation (Pd) is 1.35 W.
  9. What is the collector-emitter saturation voltage of the BCP55-16-QX transistor?
    The collector-emitter saturation voltage (VCE(sat)) is 500 mV.
  10. Is the BCP55-16-QX transistor RoHS compliant?
    Yes, the BCP55-16-QX transistor is RoHS compliant.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:650 mW
Frequency - Transition:180MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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