BC857AQC-QZ
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Nexperia USA Inc. BC857AQC-QZ

Manufacturer No:
BC857AQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857AQC-QZ is a 45 V, 100 mA PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is packaged in an ultra-small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. It is designed for a wide range of applications requiring high reliability and compact design.

Key Specifications

Type number Package version Package name Size (mm) Channel type Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] hFE [max] TJ [max] (°C) fT [min] (MHz) Automotive qualified
BC857AQC-Q SOT8009 DFN1412D-3 1.4 x 1.2 x 0.48 PNP 360.0 -45.0 -100.0 125.0 250.0 150 100.0 Yes

Key Features

  • Ultra-small DFN1412D-3 (SOT8009) package with side-wettable flanks, ideal for space-constrained designs.
  • Maximum collector-emitter voltage (VCEO) of -45 V.
  • Maximum collector current (IC) of -100 mA.
  • High current gain (hFE) with a minimum of 125 and a maximum of 250.
  • Maximum junction temperature (TJ) of 150°C.
  • Minimum transition frequency (fT) of 100 MHz.
  • AEC-Q100 qualified, ensuring reliability for automotive applications.

Applications

  • Automotive electronics, including various control and sensing circuits.
  • General-purpose switching and amplification in industrial and consumer electronics.
  • Audio and video equipment where high reliability and compact design are essential.
  • Medical devices requiring precise and reliable transistor performance.
  • IoT devices and other applications where space and power efficiency are critical.

Q & A

  1. What is the package type of the BC857AQC-QZ transistor?

    The BC857AQC-QZ transistor is packaged in an ultra-small DFN1412D-3 (SOT8009) leadless SMD plastic package with side-wettable flanks.

  2. What is the maximum collector-emitter voltage (VCEO) of the BC857AQC-QZ?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  3. What is the maximum collector current (IC) of the BC857AQC-QZ?

    The maximum collector current (IC) is -100 mA.

  4. What is the current gain (hFE) range of the BC857AQC-QZ?

    The current gain (hFE) ranges from a minimum of 125 to a maximum of 250.

  5. What is the maximum junction temperature (TJ) of the BC857AQC-QZ?

    The maximum junction temperature (TJ) is 150°C.

  6. Is the BC857AQC-QZ transistor AEC-Q100 qualified?

    Yes, the BC857AQC-QZ transistor is AEC-Q100 qualified, making it suitable for automotive applications.

  7. What is the minimum transition frequency (fT) of the BC857AQC-QZ?

    The minimum transition frequency (fT) is 100 MHz.

  8. What are some common applications of the BC857AQC-QZ transistor?

    Common applications include automotive electronics, general-purpose switching and amplification, audio and video equipment, medical devices, and IoT devices.

  9. How can I obtain samples of the BC857AQC-QZ transistor?

    Samples can be ordered via Nexperia's sales organization or through their network of global and regional distributors.

  10. Where can I find detailed documentation for the BC857AQC-QZ transistor?

    Detailed documentation, including datasheets and application notes, can be found on Nexperia's official website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC857AQC-QZ BC857BQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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