Overview
The BC856A-QR is a PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC856 series, which is known for its reliability and versatility in various electronic applications. The BC856A-QR is housed in a small SOT23 (TO-236AB) surface-mount package, making it suitable for compact and efficient designs. It is qualified according to AEC-Q101, which recommends it for use in automotive applications, as well as other general-purpose switching and amplification tasks.
Key Specifications
| Category | Specification |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Vce Saturation (Max) @ Ib, Ic | 650 mV @ 5 mA, 100 mA |
| Current - Collector Cutoff (Max) | 15 nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2 mA, 5 V |
| Power - Max | 250 mW |
| Frequency - Transition | 100 MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT23 (TO-236AB) |
Key Features
- Low current (max. 100 mA) and low voltage (max. 65 V) capabilities.
- Qualified according to AEC-Q101, making it suitable for automotive applications.
- Compact SOT23 (TO-236AB) surface-mount package for efficient design.
- General-purpose switching and amplification.
- High transition frequency of 100 MHz.
- Maximum operating temperature of 150°C (TJ).
Applications
The BC856A-QR transistor is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is recommended for use in automotive electronics.
- General-purpose switching: Suitable for switching applications where low current and voltage are required.
- Amplification: Can be used in amplifier circuits for low-power applications.
- Industrial and consumer electronics: Applicable in various industrial and consumer electronic devices where reliability and compact design are essential.
Q & A
- What is the maximum collector current of the BC856A-QR transistor?
The maximum collector current is 100 mA. - What is the maximum collector-emitter breakdown voltage of the BC856A-QR transistor?
The maximum collector-emitter breakdown voltage is 65 V. - What package type does the BC856A-QR transistor use?
The BC856A-QR transistor is housed in a SOT23 (TO-236AB) surface-mount package. - Is the BC856A-QR transistor qualified for automotive applications?
Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications. - What is the maximum operating temperature of the BC856A-QR transistor?
The maximum operating temperature is 150°C (TJ). - What is the transition frequency of the BC856A-QR transistor?
The transition frequency is 100 MHz. - What is the DC current gain (hFE) of the BC856A-QR transistor?
The DC current gain (hFE) is minimum 125 @ 2 mA, 5 V. - Can the BC856A-QR transistor be used for amplification?
Yes, it can be used for general-purpose amplification tasks. - What is the maximum power dissipation of the BC856A-QR transistor?
The maximum power dissipation is 250 mW. - Is the BC856A-QR transistor suitable for industrial applications?
Yes, it is suitable for various industrial and consumer electronic applications due to its reliability and compact design.
