Overview
The BC807,215 is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications, including general-purpose switching and amplification. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | |
| Voltage - Collector Emitter Breakdown (Max) | 45 | V |
| Current - Collector (Ic) (Max) | 500 | mA |
| Power - Max | 250 | mW |
| Operating Temperature (TJ) | 150 | °C |
| Frequency - Transition | 80 | MHz |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 100 | nA |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Mounting Type | Surface Mount |
Key Features
- General-purpose transistor: Suitable for a wide range of applications including switching and amplification.
- Compact packaging: Available in SOT23 (TO-236AB) package, ideal for space-constrained designs.
- High operating temperature: Can operate up to 150°C (TJ), making it suitable for high-temperature environments.
- Low collector-emitter saturation voltage: Vce Saturation of 700mV @ 50mA, 500mA, which helps in reducing power losses.
- High current gain: DC Current Gain (hFE) of 100 @ 100mA, 1V, ensuring reliable performance.
Applications
The BC807,215 transistor is versatile and can be used in various applications across different industries, including:
- Automotive: Suitable for automotive systems due to its compliance with AEC-Q101 standards.
- Industrial: Used in industrial control systems, power supplies, and other industrial electronics.
- Consumer Electronics: Found in mobile devices, wearables, and other consumer electronic products.
- Power and Computing: Used in power management and computing applications where efficient switching and amplification are required.
Q & A
- What is the maximum collector-emitter breakdown voltage of the BC807,215 transistor?
The maximum collector-emitter breakdown voltage is 45V.
- What is the maximum collector current of the BC807,215 transistor?
The maximum collector current is 500mA.
- What is the operating temperature range of the BC807,215 transistor?
The transistor can operate up to a junction temperature (TJ) of 150°C.
- What is the package type of the BC807,215 transistor?
The transistor is packaged in TO-236-3, SC-59, SOT-23-3.
- What is the transition frequency of the BC807,215 transistor?
The transition frequency is 80MHz.
- What is the DC current gain (hFE) of the BC807,215 transistor?
The DC current gain (hFE) is 100 @ 100mA, 1V.
- Is the BC807,215 transistor suitable for high-temperature applications?
Yes, it is suitable for high-temperature applications up to 150°C (TJ).
- What are some common applications of the BC807,215 transistor?
It is used in automotive, industrial, consumer electronics, power, and computing applications.
- Does the BC807,215 transistor comply with any automotive standards?
Yes, it complies with AEC-Q101 standards.
- How is the BC807,215 transistor typically mounted?
It is a surface-mount device (SMD).
