BAS32L,115
  • Share:

Nexperia USA Inc. BAS32L,115

Manufacturer No:
BAS32L,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 200MA LLDS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS32L,115 is a high-speed switching diode manufactured by Nexperia USA Inc. This diode is fabricated in planar technology and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. It is designed for applications requiring fast switching performance and is part of Nexperia’s extensive portfolio of diodes, which power a wide range of electronic designs across various industries.

Key Specifications

ParameterValue
Type NumberBAS32L
Orderable Part NumberBAS32L,115
PackageSOD80C (MiniMelf)
Peak Reverse Voltage (VR)100 V
Repetitive Peak Reverse Voltage (VRRM)100 V
Repetitive Peak Forward Current (IFRM)450 mA
Forward Current (IF)200 mA
Reverse Recovery Time (trr)≤ 4 ns
Maximum Forward Voltage (VF)1000 mV @ IF = 100 mA
Maximum Reverse Current (IR)5000 nA @ VR = 75 V
Package Size3.5 x 1.5 mm

Key Features

  • High-speed switching performance with a reverse recovery time of ≤ 4 ns.
  • Encapsulated in a small hermetically sealed glass SOD80C SMD package.
  • Peak reverse voltage of 100 V and repetitive peak reverse voltage of 100 V.
  • Repetitive peak forward current of 450 mA and forward current of 200 mA.
  • Low forward voltage drop of 1000 mV at 100 mA.
  • Ideal for applications requiring fast switching and reverse polarity protection.

Applications

The BAS32L,115 diode is suitable for a variety of applications across different industries, including:

  • Automotive systems: For high-speed switching and protection in automotive electronics.
  • Industrial applications: Used in power supplies, motor control, and other industrial control systems.
  • Consumer electronics: Found in mobile devices, wearables, and other consumer electronic products.
  • Power and computing: Utilized in power management and computing systems for efficient and reliable operation.

Q & A

  1. What is the peak reverse voltage of the BAS32L,115 diode?
    The peak reverse voltage is 100 V.
  2. What is the typical reverse recovery time of the BAS32L,115?
    The reverse recovery time is ≤ 4 ns.
  3. In what package is the BAS32L,115 diode encapsulated?
    The diode is encapsulated in a small hermetically sealed glass SOD80C SMD package.
  4. What is the maximum forward current of the BAS32L,115?
    The maximum forward current is 200 mA.
  5. What are the typical applications of the BAS32L,115 diode?
    The diode is used in automotive, industrial, consumer electronics, power, and computing applications.
  6. What is the maximum repetitive peak forward current of the BAS32L,115?
    The maximum repetitive peak forward current is 450 mA.
  7. What is the forward voltage drop at 100 mA for the BAS32L,115?
    The forward voltage drop is 1000 mV at 100 mA.
  8. Is the BAS32L,115 RoHS compliant?
    Yes, the BAS32L,115 is RoHS compliant.
  9. What is the package size of the BAS32L,115?
    The package size is 3.5 x 1.5 mm.
  10. Can the BAS32L,115 be used for reverse polarity protection?
    Yes, it is suitable for reverse polarity protection due to its high-speed switching and voltage handling capabilities.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:LLDS; MiniMelf
Operating Temperature - Junction:200°C (Max)
0 Remaining View Similar

In Stock

$0.14
2,715

Please send RFQ , we will respond immediately.

Same Series
BAS32L,115
BAS32L,115
DIODE GEN PURP 75V 200MA LLDS

Similar Products

Part Number BAS32L,115 BAS32L,135 BAS321,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 200 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V 5 µA @ 75 V 100 nA @ 200 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 SC-76, SOD-323
Supplier Device Package LLDS; MiniMelf LLDS; MiniMelf SOD-323
Operating Temperature - Junction 200°C (Max) 200°C (Max) 150°C (Max)

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74HC244D-Q100,118
74HC244D-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC11D,653
74HC11D,653
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SO
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74HC2GU04GW-Q100H
74HC2GU04GW-Q100H
Nexperia USA Inc.
IC INVERTER 2CH 2-INP 6TSSOP