Overview
The BAS316/DG/B4F is a high-speed switching diode manufactured by Nexperia USA Inc. This diode is encapsulated in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of high-frequency and high-speed switching applications. The BAS316 series is known for its fast recovery time and low capacitance, which are crucial for efficient and reliable operation in modern electronic circuits.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Voltage (VR) | Tj = 25 °C | - | - | 100 | V |
| Forward Voltage (VF) @ IF | IF = 150 mA | - | - | 1.25 | V |
| Reverse Current (IR) @ VR | VR = 80 V; Tj = 25 °C | - | - | 0.5 µA | |
| Reverse Recovery Time (trr) | IF = 10 mA; IR = 10 mA; RL = 100 Ω; Tamb = 25 °C | - | - | 4 ns | |
| Average Rectified Current (Io) | - | - | - | 250 mA | |
| Package | - | - | - | SOD323 (SC-76) | |
| Operating Temperature - Junction | - | - | - | -55 °C to 150 °C | |
| Diode Capacitance @ VR, F | VR = 0 V; f = 1 MHz; Tj = 25 °C | - | - | 1.5 pF |
Key Features
- High-Speed Switching: The BAS316/DG/B4F features a fast recovery time of less than 4 ns, making it ideal for high-speed switching applications.
- Low Capacitance: With a diode capacitance of 1.5 pF at 1 MHz, this diode minimizes parasitic capacitance effects in high-frequency circuits.
- Low Leakage Current: The diode has a low reverse current of 0.5 µA at 80 V, ensuring minimal power loss in standby conditions.
- Compact Package: Encapsulated in a small SOD323 (SC-76) package, it is suitable for space-constrained designs.
- High Reliability: The diode is designed to operate over a wide temperature range from -55 °C to 150 °C, ensuring reliability in various environmental conditions.
Applications
- High-Speed Switching: Ideal for applications requiring fast switching times, such as in power supplies, DC-DC converters, and high-frequency circuits.
- General-Purpose Switching: Suitable for general-purpose switching applications where fast recovery and low capacitance are beneficial.
- Automotive and Industrial Systems: The BAS316 series, including the BAS316/DG/B4F, is AEC-Q101 qualified, making it suitable for automotive and industrial applications that require high reliability and performance.
Q & A
- What is the maximum reverse voltage of the BAS316/DG/B4F diode?
The maximum reverse voltage (VR) is 100 V.
- What is the forward voltage drop of the BAS316/DG/B4F at 150 mA?
The forward voltage drop (VF) at 150 mA is 1.25 V.
- What is the reverse recovery time of the BAS316/DG/B4F?
The reverse recovery time (trr) is less than 4 ns.
- What is the average rectified current (Io) rating of the BAS316/DG/B4F?
The average rectified current (Io) is 250 mA.
- In what package is the BAS316/DG/B4F available?
The BAS316/DG/B4F is available in the SOD323 (SC-76) package.
- What is the operating temperature range of the BAS316/DG/B4F?
The operating temperature range is from -55 °C to 150 °C.
- Is the BAS316/DG/B4F suitable for automotive applications?
Yes, the BAS316 series is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the diode capacitance of the BAS316/DG/B4F at 1 MHz?
The diode capacitance at 1 MHz is 1.5 pF.
- What is the reverse current of the BAS316/DG/B4F at 80 V?
The reverse current at 80 V is 0.5 µA.
- Can the BAS316/DG/B4F be used in high-frequency circuits?
Yes, the BAS316/DG/B4F is suitable for high-frequency circuits due to its fast recovery time and low capacitance.
