BAS21/8R
  • Share:

Nexperia USA Inc. BAS21/8R

Manufacturer No:
BAS21/8R
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BAS21 - HIGH VOLTAGE SWITCHING D
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21/8R, produced by Nexperia USA Inc., is a high-performance general-purpose switching diode designed for a wide range of applications. This diode is characterized by its high switching speed, low leakage current, and small SMD plastic package, making it ideal for various electronic circuits. The BAS21/8R is part of the BAS21 series, known for its reliability and efficiency in handling small signal operations.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 250V
Current - Average Rectified (Io) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50ns
Current - Reverse Leakage @ Vr 100nA @ 200V
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature - Junction -65°C to +150°C

Key Features

  • High Switching Speed: The BAS21/8R features a reverse recovery time of 50ns, making it suitable for high-frequency applications.
  • Low Leakage Current: With a reverse leakage current of 100nA at 200V, this diode minimizes power loss and enhances overall circuit efficiency.
  • Low Capacitance: The diode has a low capacitance of 5pF at 0V and 1MHz, which is beneficial for high-speed switching applications.
  • Compact Package: The SOT-23 package is small and surface-mountable, making it ideal for space-constrained designs.
  • Compliance with Regulations: The BAS21/8R is compliant with EU RoHS, CN RoHS, and REACH regulations, ensuring environmental safety and regulatory compliance.

Applications

The BAS21/8R is versatile and can be used in a variety of applications, including:

  • General-Purpose Switching: Suitable for general-purpose switching in electronic circuits due to its high switching speed and low leakage current.
  • Rectifier Circuits: Can be used in rectifier circuits where high efficiency and low forward voltage drop are required.
  • High-Frequency Circuits: Ideal for high-frequency applications such as RF circuits, audio equipment, and other high-speed electronic devices.
  • Automotive and Industrial Electronics: Its robust specifications make it suitable for use in automotive and industrial electronic systems where reliability and performance are critical.

Q & A

  1. What is the maximum reverse voltage of the BAS21/8R diode?

    The maximum reverse voltage (Vr) of the BAS21/8R diode is 250V.

  2. What is the average rectified current (Io) of the BAS21/8R?

    The average rectified current (Io) of the BAS21/8R is 200mA (DC).

  3. What is the forward voltage drop (Vf) of the BAS21/8R at 200mA?

    The forward voltage drop (Vf) of the BAS21/8R at 200mA is 1.25V.

  4. What is the reverse recovery time (trr) of the BAS21/8R?

    The reverse recovery time (trr) of the BAS21/8R is 50ns.

  5. What is the capacitance of the BAS21/8R at 0V and 1MHz?

    The capacitance of the BAS21/8R at 0V and 1MHz is 5pF.

  6. What is the operating temperature range of the BAS21/8R?

    The operating temperature range of the BAS21/8R is -65°C to +150°C.

  7. Is the BAS21/8R compliant with environmental regulations?

    Yes, the BAS21/8R is compliant with EU RoHS, CN RoHS, and REACH regulations.

  8. What is the package type of the BAS21/8R?

    The BAS21/8R comes in a SOT-23 package.

  9. What are some common applications of the BAS21/8R?

    The BAS21/8R is commonly used in general-purpose switching, rectifier circuits, high-frequency circuits, and automotive and industrial electronics.

  10. How does the BAS21/8R handle high-frequency operations?

    The BAS21/8R is designed to handle high-frequency operations due to its low capacitance and fast reverse recovery time, making it suitable for high-speed switching applications.

  11. Is the BAS21/8R suitable for surface mounting?

    Yes, the BAS21/8R is designed for surface mounting and comes in a compact SOT-23 package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.02
27,523

Please send RFQ , we will respond immediately.

Same Series
BAS21,215
BAS21,215
DIODE GP 200V 200MA TO236AB
BAS19,215
BAS19,215
DIODE GP 100V 200MA TO236AB
BAS19,235
BAS19,235
DIODE GP 100V 200MA TO236AB
BAS20,215
BAS20,215
DIODE GEN PURP 150V 200MA SOT23
BAS20,235
BAS20,235
DIODE GEN PURP 150V 200MA SOT23
BAS21/8R
BAS21/8R
BAS21 - HIGH VOLTAGE SWITCHING D
BAS21/8VL
BAS21/8VL
DIODE GP 250V 200MA TO236AB

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
BAT854SW,115
BAT854SW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR