BAS21/8R
  • Share:

Nexperia USA Inc. BAS21/8R

Manufacturer No:
BAS21/8R
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
BAS21 - HIGH VOLTAGE SWITCHING D
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21/8R, produced by Nexperia USA Inc., is a high-performance general-purpose switching diode designed for a wide range of applications. This diode is characterized by its high switching speed, low leakage current, and small SMD plastic package, making it ideal for various electronic circuits. The BAS21/8R is part of the BAS21 series, known for its reliability and efficiency in handling small signal operations.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 250V
Current - Average Rectified (Io) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50ns
Current - Reverse Leakage @ Vr 100nA @ 200V
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature - Junction -65°C to +150°C

Key Features

  • High Switching Speed: The BAS21/8R features a reverse recovery time of 50ns, making it suitable for high-frequency applications.
  • Low Leakage Current: With a reverse leakage current of 100nA at 200V, this diode minimizes power loss and enhances overall circuit efficiency.
  • Low Capacitance: The diode has a low capacitance of 5pF at 0V and 1MHz, which is beneficial for high-speed switching applications.
  • Compact Package: The SOT-23 package is small and surface-mountable, making it ideal for space-constrained designs.
  • Compliance with Regulations: The BAS21/8R is compliant with EU RoHS, CN RoHS, and REACH regulations, ensuring environmental safety and regulatory compliance.

Applications

The BAS21/8R is versatile and can be used in a variety of applications, including:

  • General-Purpose Switching: Suitable for general-purpose switching in electronic circuits due to its high switching speed and low leakage current.
  • Rectifier Circuits: Can be used in rectifier circuits where high efficiency and low forward voltage drop are required.
  • High-Frequency Circuits: Ideal for high-frequency applications such as RF circuits, audio equipment, and other high-speed electronic devices.
  • Automotive and Industrial Electronics: Its robust specifications make it suitable for use in automotive and industrial electronic systems where reliability and performance are critical.

Q & A

  1. What is the maximum reverse voltage of the BAS21/8R diode?

    The maximum reverse voltage (Vr) of the BAS21/8R diode is 250V.

  2. What is the average rectified current (Io) of the BAS21/8R?

    The average rectified current (Io) of the BAS21/8R is 200mA (DC).

  3. What is the forward voltage drop (Vf) of the BAS21/8R at 200mA?

    The forward voltage drop (Vf) of the BAS21/8R at 200mA is 1.25V.

  4. What is the reverse recovery time (trr) of the BAS21/8R?

    The reverse recovery time (trr) of the BAS21/8R is 50ns.

  5. What is the capacitance of the BAS21/8R at 0V and 1MHz?

    The capacitance of the BAS21/8R at 0V and 1MHz is 5pF.

  6. What is the operating temperature range of the BAS21/8R?

    The operating temperature range of the BAS21/8R is -65°C to +150°C.

  7. Is the BAS21/8R compliant with environmental regulations?

    Yes, the BAS21/8R is compliant with EU RoHS, CN RoHS, and REACH regulations.

  8. What is the package type of the BAS21/8R?

    The BAS21/8R comes in a SOT-23 package.

  9. What are some common applications of the BAS21/8R?

    The BAS21/8R is commonly used in general-purpose switching, rectifier circuits, high-frequency circuits, and automotive and industrial electronics.

  10. How does the BAS21/8R handle high-frequency operations?

    The BAS21/8R is designed to handle high-frequency operations due to its low capacitance and fast reverse recovery time, making it suitable for high-speed switching applications.

  11. Is the BAS21/8R suitable for surface mounting?

    Yes, the BAS21/8R is designed for surface mounting and comes in a compact SOT-23 package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.02
27,523

Please send RFQ , we will respond immediately.

Same Series
BAS21,215
BAS21,215
DIODE GP 200V 200MA TO236AB
BAS19,215
BAS19,215
DIODE GP 100V 200MA TO236AB
BAS19,235
BAS19,235
DIODE GP 100V 200MA TO236AB
BAS20,215
BAS20,215
DIODE GEN PURP 150V 200MA SOT23
BAS20,235
BAS20,235
DIODE GEN PURP 150V 200MA SOT23
BAS21/8R
BAS21/8R
BAS21 - HIGH VOLTAGE SWITCHING D
BAS21/8VL
BAS21/8VL
DIODE GP 250V 200MA TO236AB

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

BAS16J,135
BAS16J,135
Nexperia USA Inc.
DIODE GP 100V 250MA SOD323F
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
PDZ27BZ
PDZ27BZ
Nexperia USA Inc.
DIODE ZENER 26.86V 400MW SOD323
PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
BZX79-C18,133
BZX79-C18,133
Nexperia USA Inc.
DIODE ZENER 18V 400MW ALF2
PDZ3.3B,115
PDZ3.3B,115
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW SOD323
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12