BAS21,215
  • Share:

Nexperia USA Inc. BAS21,215

Manufacturer No:
BAS21,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GP 200V 200MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Nexperia BAS21,215 is a high-voltage switching diode designed for general-purpose applications. It is part of the BAS21 series, known for its high switching speed, low leakage current, and robust electrical characteristics. This diode is packaged in a small SOT23 plastic package, making it suitable for a wide range of electronic designs where space is a constraint.

Key Specifications

ParameterConditionsMinTypMaxUnit
Forward Voltage (VF)IF = 200 mA; Tj = 25 °C--1.25V
Reverse Voltage (VR)---200V
Reverse Current (IR)VR = 200 V; Tj = 25 °C--100 nA
Diode Capacitance (Cd)VR = 0 V; f = 1 MHz; Tamb = 25 °C--5pF
Reverse Recovery Time (trr)IF = 30 mA; IR = 30 mA; RL = 100 Ω; IR(meas) = 3 mA; Tamb = 25 °C--50 ns
Peak Forward Current (IFSM)tp = 10 ms; Tj(init) = 25 °C--1.7 A
Total Power Dissipation (Ptot)Tamb ≤ 25 °C--250 mW
Junction Temperature (Tj)---150°C
Ambient Temperature (Tamb)--55-150°C
Storage Temperature (Tstg)--65-150°C
Package---SOT23

Key Features

  • High switching speed with a reverse recovery time (trr) of ≤ 50 ns.
  • Low leakage current.
  • High reverse voltage rating of up to 200 V.
  • Low diode capacitance of ≤ 5 pF.
  • Small SOT23 plastic package for space-efficient designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The Nexperia BAS21,215 is suitable for a variety of applications, including:

  • General-purpose switching circuits.
  • High-frequency switching applications.
  • Power supply circuits requiring high voltage and low capacitance.
  • Automotive and industrial electronics where robustness and reliability are crucial.

Q & A

  1. What is the maximum reverse voltage rating of the BAS21,215 diode?
    The maximum reverse voltage rating is 200 V.
  2. What is the typical forward voltage drop at 200 mA?
    The typical forward voltage drop at 200 mA is 1.25 V.
  3. What is the reverse recovery time of the BAS21,215?
    The reverse recovery time (trr) is ≤ 50 ns.
  4. What is the package type of the BAS21,215?
    The package type is SOT23.
  5. Is the BAS21,215 RoHS compliant?
    Yes, the BAS21,215 is RoHS compliant.
  6. What is the maximum junction temperature for the BAS21,215?
    The maximum junction temperature is 150 °C.
  7. What is the total power dissipation rating for the BAS21,215 at ambient temperatures ≤ 25 °C?
    The total power dissipation rating is 250 mW.
  8. What is the typical diode capacitance at 0 V and 1 MHz?
    The typical diode capacitance is ≤ 5 pF.
  9. What is the non-repetitive peak forward current rating for a pulse duration of 10 ms?
    The non-repetitive peak forward current rating is 1.7 A.
  10. What is the storage temperature range for the BAS21,215?
    The storage temperature range is -65 °C to 150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.16
1,007

Please send RFQ , we will respond immediately.

Same Series
BAS21,215
BAS21,215
DIODE GP 200V 200MA TO236AB
BAS19,215
BAS19,215
DIODE GP 100V 200MA TO236AB
BAS19,235
BAS19,235
DIODE GP 100V 200MA TO236AB
BAS20,215
BAS20,215
DIODE GEN PURP 150V 200MA SOT23
BAS20,235
BAS20,235
DIODE GEN PURP 150V 200MA SOT23
BAS21/8R
BAS21/8R
BAS21 - HIGH VOLTAGE SWITCHING D
BAS21/8VL
BAS21/8VL
DIODE GP 250V 200MA TO236AB

Similar Products

Part Number BAS21,215 BAS21,235 BAS20,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 150 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BZX79-C3V3,133
BZX79-C3V3,133
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW ALF2
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
PDZ12B,115
PDZ12B,115
Nexperia USA Inc.
DIODE ZENER 12V 400MW SOD323
BZX84-C12/DG/B3,23
BZX84-C12/DG/B3,23
Nexperia USA Inc.
DIODE ZENER 12.05V 250MW TO236AB
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74HC595PW,118
74HC595PW,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16TSSOP