MT53E1G32D2FW-046 WT:B TR
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Micron Technology Inc. MT53E1G32D2FW-046 WT:B TR

Manufacturer No:
MT53E1G32D2FW-046 WT:B TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 32GBIT 2.133GHZ 200VFBGA
Delivery:
Payment:
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Product Introduction

Overview

The MT53E1G32D2FW-046 WT:B TR is a Mobile LPDDR4 SDRAM memory IC produced by Micron Technology Inc. This high-speed, CMOS dynamic random-access memory device is designed for low-power consumption and high-performance applications. It features a 32Gbit memory density, configured as 1G x 32 bits, and operates within a voltage range of 1.06V to 1.17V. The device is packaged in a 200-pin TFBGA (Thin Fine-Pitch Ball Grid Array) and supports surface mount technology (SMT).

Key Specifications

Parameter Value
DRAM Type Mobile LPDDR4
Memory Density 32Gbit
Memory Configuration 1G x 32 bits
Clock Frequency Max 2.133 GHz
IC Case / Package 200-TFBGA
No. of Pins 200 Pins
Supply Voltage Nom 1.06V ~ 1.17V
Operating Temperature Min -25°C
Operating Temperature Max 85°C
IC Mounting Surface Mount
MSL MSL 3 - 168 hours

Key Features

  • 16n prefetch DDR architecture with 8 internal banks per channel for concurrent operation.
  • Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane.
  • Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16,32).
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling.
  • Up to 8.5GB/s per die x16 channel, on-chip temperature sensor to control self refresh rate.
  • Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability.
  • Programmable VSS (ODT) termination, single-ended CK and DQS support.

Applications

The MT53E1G32D2FW-046 WT:B TR is suitable for a variety of high-performance, low-power applications, including:

  • Mobile devices such as smartphones and tablets.
  • Laptops and ultrabooks.
  • Embedded systems requiring high memory density and low power consumption.
  • IOT devices and other low-power, high-performance applications.

Q & A

  1. What is the memory density of the MT53E1G32D2FW-046 WT:B TR?

    The memory density is 32Gbit, configured as 1G x 32 bits.

  2. What is the maximum clock frequency of this device?

    The maximum clock frequency is 2.133 GHz.

  3. What is the operating voltage range of the MT53E1G32D2FW-046 WT:B TR?

    The operating voltage range is 1.06V to 1.17V.

  4. What is the package type and pin count of this device?

    The device is packaged in a 200-pin TFBGA.

  5. What are the operating temperature ranges for this device?

    The operating temperature range is from -25°C to 85°C.

  6. Is the MT53E1G32D2FW-046 WT:B TR RoHS compliant?
  7. What is the mounting type of this device?

    The device uses surface mount technology (SMT).

  8. What are some key features of the MT53E1G32D2FW-046 WT:B TR?
  9. What is the MSL (Moisture Sensitivity Level) of this device?
  10. What are typical applications for the MT53E1G32D2FW-046 WT:B TR?

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:- 
Memory Interface:Parallel
Clock Frequency:2.133 GHz
Write Cycle Time - Word, Page:18ns
Access Time:3.5 ns
Voltage - Supply:1.06V ~ 1.17V
Operating Temperature:-25°C ~ 85°C (TC)
Mounting Type:Surface Mount
Package / Case:200-TFBGA
Supplier Device Package:200-TFBGA (10x14.5)
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$37.88
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