Overview
The MT53E1G32D2FW-046 WT:B, produced by Micron Technology Inc., is a high-performance mobile low-power DDR4 (LPDDR4) SDRAM. This device is designed for mobile applications, offering low power consumption and high-speed data transfer. It is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8 internal banks for concurrent operation. The device operates within a temperature range of -40°C to +95°C, making it suitable for a variety of mobile and embedded systems.
Key Specifications
| Specification | Value |
|---|---|
| DRAM Type | Mobile LPDDR4 |
| Memory Density | 32Gbit |
| Memory Configuration | 1G x 32bit |
| Clock Frequency Max | 2.133GHz |
| IC Case / Package | TFBGA-200 |
| No. of Pins | 200 Pins |
| Supply Voltage Nom | 1.1V (VDD2 / 0.60V VDDQ or 1.10V VDDQ) |
| IC Mounting | Surface Mount |
| Operating Temperature Min | -40°C |
| Operating Temperature Max | +95°C |
| MSL | MSL 3 - 168 hours |
| RoHS Compliant | Yes |
| SVHC | No SVHC |
Key Features
- 16n prefetch DDR architecture with 8 internal banks per channel for concurrent operation.
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane.
- Programmable READ and WRITE latencies (RL/WL), programmable VSS (ODT) termination.
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling.
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR).
- Selectable output drive strength (DS), clock-stop capability.
- Single-ended CK and DQS support.
- Up to 8.5GB/s per die x16 channel data rate.
Applications
The MT53E1G32D2FW-046 WT:B is designed for use in various mobile and embedded systems, including smartphones, tablets, and other portable devices. Its low power consumption and high-speed data transfer capabilities make it an ideal choice for applications requiring efficient memory performance.
- Smartphones and mobile devices.
- Tablets and handheld devices.
- Embedded systems requiring low power and high performance.
- Automotive and industrial applications where reliability and performance are critical.
Q & A
- What is the memory density of the MT53E1G32D2FW-046 WT:B?
The memory density is 32Gbit.
- What is the memory configuration of this device?
The memory configuration is 1G x 32bit.
- What is the maximum clock frequency of the MT53E1G32D2FW-046 WT:B?
The maximum clock frequency is 2.133GHz.
- What type of package does this device use?
The device uses a TFBGA-200 package.
- What is the operating temperature range of the MT53E1G32D2FW-046 WT:B?
The operating temperature range is from -40°C to +95°C.
- Is the MT53E1G32D2FW-046 WT:B RoHS compliant?
Yes, it is RoHS compliant.
- Does the MT53E1G32D2FW-046 WT:B contain any SVHC substances?
No, it does not contain any SVHC substances.
- What is the MSL (Moisture Sensitivity Level) of the MT53E1G32D2FW-046 WT:B?
The MSL is 3 - 168 hours.
- What are some key features of the MT53E1G32D2FW-046 WT:B?
Key features include 16n prefetch DDR architecture, programmable READ and WRITE latencies, and an on-chip temperature sensor.
- In what types of applications is the MT53E1G32D2FW-046 WT:B typically used?
It is typically used in smartphones, tablets, and other mobile and embedded systems.
- How does the MT53E1G32D2FW-046 WT:B manage power consumption?
The device features low power consumption through technologies like partial-array self refresh (PASR) and clock-stop capability.
