MT53D1024M32D4DT-046 AAT ES:D
  • Share:

Micron Technology Inc. MT53D1024M32D4DT-046 AAT ES:D

Manufacturer No:
MT53D1024M32D4DT-046 AAT ES:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
LPDDR4 32G 1GX32 FBGA QDP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D1024M32D4DT-046 AAT ES:D is a high-performance mobile LPDDR4 SDRAM memory IC produced by Micron Technology Inc. This component is designed to provide ultra-fast data storage and retrieval capabilities, making it an excellent choice for a wide range of electronic projects, particularly those requiring high-speed and reliable memory solutions.

With its 200-VFBGA packaging, this IC is optimized for surface mount applications, facilitating easy integration into compact circuit board designs and automated production processes. The MT53D1024M32D4DT-046 AAT ES:D is also compliant with the AEC-Q100 standard, ensuring robust performance in harsh environments.

Key Specifications

Parameter Value
Manufacturer Micron Technology Inc.
Part Number MT53D1024M32D4DT-046 AAT ES:D
Memory Type Volatile DRAM
Memory Format SDRAM - Mobile LPDDR4
Memory Size 32 Gbit
Memory Organization 1 G x 32
Clock Frequency 2.133 GHz
Voltage - Supply 1.1 V
Operating Temperature -40°C ~ 105°C (TC)
Package / Case 200-VFBGA (10x14.5)
Mounting Type Surface Mount
Qualification AEC-Q100

Key Features

  • High-Speed Data Storage: The MT53D1024M32D4DT-046 AAT ES:D features a clock frequency of 2.133 GHz, enabling high-speed data storage and retrieval.
  • Wide Temperature Range: This IC operates within a temperature range of -40°C to 105°C, making it suitable for harsh environments.
  • High Integration and Reliability: The 200-VFBGA packaging ensures high integration and reliability, along with fast heat dissipation.
  • Low Voltage Operation: The IC operates at a supply voltage of 1.1 V, which is energy-efficient and adaptable to various power supply requirements.
  • AEC-Q100 Compliance: Compliant with the AEC-Q100 standard, ensuring robust performance in automotive and other demanding applications.

Applications

  • IoT Devices: Used to store sensor data, firmware, and configuration information in IoT devices.
  • Computers and Servers: Crucial components in computers and servers, providing temporary storage for data and program code during active processing.
  • Automotive Electronics: Used in automotive applications to store firmware, manage engine control units (ECUs), store navigation data, and support various in-car entertainment systems.
  • Wearable Devices: Integrated into wearable devices such as smartwatches and fitness trackers to store user data, health indicators, and device settings.
  • Security Field: Utilized in security applications requiring reliable and high-speed data storage.

Q & A

  1. What is the memory size of the MT53D1024M32D4DT-046 AAT ES:D?

    The memory size is 32 Gbit, organized as 1 G x 32.

  2. What is the clock frequency of this IC?

    The clock frequency is 2.133 GHz.

  3. What is the operating temperature range of the MT53D1024M32D4DT-046 AAT ES:D?

    The operating temperature range is -40°C to 105°C (TC).

  4. What type of packaging does this IC use?

    The IC uses a 200-VFBGA (10x14.5) surface mount package.

  5. Is the MT53D1024M32D4DT-046 AAT ES:D compliant with any automotive standards?

    Yes, it is compliant with the AEC-Q100 standard.

  6. What are some common applications of the MT53D1024M32D4DT-046 AAT ES:D?

    Common applications include IoT devices, computers and servers, automotive electronics, wearable devices, and security field applications.

  7. What is the supply voltage of the MT53D1024M32D4DT-046 AAT ES:D?

    The supply voltage is 1.1 V.

  8. How does the MT53D1024M32D4DT-046 AAT ES:D ensure high reliability?

    It ensures high reliability through its high integration, fast heat dissipation, and compliance with the AEC-Q100 standard.

  9. Can the MT53D1024M32D4DT-046 AAT ES:D be used in harsh environments?

    Yes, it can operate in harsh environments due to its wide temperature range and AEC-Q100 compliance.

  10. What is the memory interface of the MT53D1024M32D4DT-046 AAT ES:D?

    The memory interface is LPDDR4.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:32Gb (1G x 32)
Memory Interface:- 
Clock Frequency:2.133 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:200-VFBGA
Supplier Device Package:200-VFBGA (10x14.5)
0 Remaining View Similar

In Stock

-
353

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

W25N01GVZEIG TR
W25N01GVZEIG TR
Winbond Electronics
IC FLASH 1GBIT SPI 104MHZ 8WSON
CAT25256XI-T2
CAT25256XI-T2
onsemi
IC EEPROM 256KBIT SPI 8SOIC
DS2431P-A1+
DS2431P-A1+
Analog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
M27C1001-10F1
M27C1001-10F1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32CDIP
M93C46-MN6T
M93C46-MN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M48Z128Y-70PM1
M48Z128Y-70PM1
STMicroelectronics
IC NVSRAM 1MBIT PARALLEL 32PMDIP
M29W128FL70ZA6E
M29W128FL70ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
CAT25080YI-GT3JN
CAT25080YI-GT3JN
onsemi
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
MT41K128M16JT-125 M:K TR
MT41K128M16JT-125 M:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
DS2431P+W
DS2431P+W
Analog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
PCA24S08AD,118
PCA24S08AD,118
NXP USA Inc.
IC EEPROM 8KBIT I2C 400KHZ 8SO
S34ML16G202BHI000
S34ML16G202BHI000
Cypress Semiconductor Corp
IC FLASH 16GBIT PARALLEL 63BGA

Related Product By Brand

MT29F1G08ABAEAWP-IT:E
MT29F1G08ABAEAWP-IT:E
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 48TSOP I
MT40A1G16TB-062E:F
MT40A1G16TB-062E:F
Micron Technology Inc.
MOD DRAM 16GBIT PARALLEL 96FBGA
MTFC8GAMALBH-AAT
MTFC8GAMALBH-AAT
Micron Technology Inc.
IC FLASH 64GBIT MMC 153TFBGA
MTFC32GAZAQHD-IT TR
MTFC32GAZAQHD-IT TR
Micron Technology Inc.
IC FLASH 32GBIT MMC 153TFBGA
M25P16-VMF6P
M25P16-VMF6P
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 16SO W
M29W320DT70N6F TR
M29W320DT70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M25P64-VME6TG TR
M25P64-VME6TG TR
Micron Technology Inc.
IC FLASH 64MBIT SPI 50MHZ 8VDFPN
M25P80-VMN3PB
M25P80-VMN3PB
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M25P32-VMW3TGB TR
M25P32-VMW3TGB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MT41K1G8SN-125:A
MT41K1G8SN-125:A
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
MT41K128M16JT-125 V:K TR
MT41K128M16JT-125 V:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT41K512M16HA-125 AIT:A TR
MT41K512M16HA-125 AIT:A TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA