MT53D1024M32D4DT-046 AAT ES:D
  • Share:

Micron Technology Inc. MT53D1024M32D4DT-046 AAT ES:D

Manufacturer No:
MT53D1024M32D4DT-046 AAT ES:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
LPDDR4 32G 1GX32 FBGA QDP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT53D1024M32D4DT-046 AAT ES:D is a high-performance mobile LPDDR4 SDRAM memory IC produced by Micron Technology Inc. This component is designed to provide ultra-fast data storage and retrieval capabilities, making it an excellent choice for a wide range of electronic projects, particularly those requiring high-speed and reliable memory solutions.

With its 200-VFBGA packaging, this IC is optimized for surface mount applications, facilitating easy integration into compact circuit board designs and automated production processes. The MT53D1024M32D4DT-046 AAT ES:D is also compliant with the AEC-Q100 standard, ensuring robust performance in harsh environments.

Key Specifications

Parameter Value
Manufacturer Micron Technology Inc.
Part Number MT53D1024M32D4DT-046 AAT ES:D
Memory Type Volatile DRAM
Memory Format SDRAM - Mobile LPDDR4
Memory Size 32 Gbit
Memory Organization 1 G x 32
Clock Frequency 2.133 GHz
Voltage - Supply 1.1 V
Operating Temperature -40°C ~ 105°C (TC)
Package / Case 200-VFBGA (10x14.5)
Mounting Type Surface Mount
Qualification AEC-Q100

Key Features

  • High-Speed Data Storage: The MT53D1024M32D4DT-046 AAT ES:D features a clock frequency of 2.133 GHz, enabling high-speed data storage and retrieval.
  • Wide Temperature Range: This IC operates within a temperature range of -40°C to 105°C, making it suitable for harsh environments.
  • High Integration and Reliability: The 200-VFBGA packaging ensures high integration and reliability, along with fast heat dissipation.
  • Low Voltage Operation: The IC operates at a supply voltage of 1.1 V, which is energy-efficient and adaptable to various power supply requirements.
  • AEC-Q100 Compliance: Compliant with the AEC-Q100 standard, ensuring robust performance in automotive and other demanding applications.

Applications

  • IoT Devices: Used to store sensor data, firmware, and configuration information in IoT devices.
  • Computers and Servers: Crucial components in computers and servers, providing temporary storage for data and program code during active processing.
  • Automotive Electronics: Used in automotive applications to store firmware, manage engine control units (ECUs), store navigation data, and support various in-car entertainment systems.
  • Wearable Devices: Integrated into wearable devices such as smartwatches and fitness trackers to store user data, health indicators, and device settings.
  • Security Field: Utilized in security applications requiring reliable and high-speed data storage.

Q & A

  1. What is the memory size of the MT53D1024M32D4DT-046 AAT ES:D?

    The memory size is 32 Gbit, organized as 1 G x 32.

  2. What is the clock frequency of this IC?

    The clock frequency is 2.133 GHz.

  3. What is the operating temperature range of the MT53D1024M32D4DT-046 AAT ES:D?

    The operating temperature range is -40°C to 105°C (TC).

  4. What type of packaging does this IC use?

    The IC uses a 200-VFBGA (10x14.5) surface mount package.

  5. Is the MT53D1024M32D4DT-046 AAT ES:D compliant with any automotive standards?

    Yes, it is compliant with the AEC-Q100 standard.

  6. What are some common applications of the MT53D1024M32D4DT-046 AAT ES:D?

    Common applications include IoT devices, computers and servers, automotive electronics, wearable devices, and security field applications.

  7. What is the supply voltage of the MT53D1024M32D4DT-046 AAT ES:D?

    The supply voltage is 1.1 V.

  8. How does the MT53D1024M32D4DT-046 AAT ES:D ensure high reliability?

    It ensures high reliability through its high integration, fast heat dissipation, and compliance with the AEC-Q100 standard.

  9. Can the MT53D1024M32D4DT-046 AAT ES:D be used in harsh environments?

    Yes, it can operate in harsh environments due to its wide temperature range and AEC-Q100 compliance.

  10. What is the memory interface of the MT53D1024M32D4DT-046 AAT ES:D?

    The memory interface is LPDDR4.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - Mobile LPDDR4
Memory Size:32Gb (1G x 32)
Memory Interface:- 
Clock Frequency:2.133 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:1.1V
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:200-VFBGA
Supplier Device Package:200-VFBGA (10x14.5)
0 Remaining View Similar

In Stock

-
353

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

M24C02-WMN6TP
M24C02-WMN6TP
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
CAT25160YI-GT3
CAT25160YI-GT3
onsemi
IC EEPROM 16KBIT SPI 8TSSOP
M48Z35Y-70MH1F
M48Z35Y-70MH1F
STMicroelectronics
IC NVSRAM 256KBIT PARALLEL 28SOH
AT45DB161E-SHD-T
AT45DB161E-SHD-T
Adesto Technologies
IC FLASH 16MBIT SPI 85MHZ 8SOIC
DS2431P-A1+T
DS2431P-A1+T
Analog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
MT25QL02GCBB8E12-0SIT TR
MT25QL02GCBB8E12-0SIT TR
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
MT53D1024M32D4DT-046 WT:D
MT53D1024M32D4DT-046 WT:D
Micron Technology Inc.
IC DRAM 32GBIT 2.133GHZ 200VFBGA
M27C64A-15F1
M27C64A-15F1
STMicroelectronics
IC EPROM 64KBIT PARALLEL 28CDIP
AT24C02BN-SH-T
AT24C02BN-SH-T
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ 8SOIC
M25P32-VMP6G
M25P32-VMP6G
Micron Technology Inc.
IC FLSH 32MBIT SPI 75MHZ 8VFQFPN
AT45DB642D-TU
AT45DB642D-TU
Adesto Technologies
IC FLASH 64MBIT SPI 66MHZ 28TSOP
MT47H128M16RT-25E AAT:C
MT47H128M16RT-25E AAT:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA

Related Product By Brand

MT41K128M16JT-125 IT:K TR
MT41K128M16JT-125 IT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT47H64M16NF-25E IT:M TR
MT47H64M16NF-25E IT:M TR
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT40A1G16KD-062E:E TR
MT40A1G16KD-062E:E TR
Micron Technology Inc.
IC FLASH 16GBIT PARALLEL 96FBGA
MT25QU02GCBB8E12-0SIT
MT25QU02GCBB8E12-0SIT
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
M29W800DB70N6T TR
M29W800DB70N6T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M25P32-VMP6TG TR
M25P32-VMP6TG TR
Micron Technology Inc.
IC FLSH 32MBIT SPI 75MHZ 8VFQFPN
M29W160EB70N3E
M29W160EB70N3E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
MT41K128M16JT-125 AAT:K
MT41K128M16JT-125 AAT:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT41K256M16HA-125 M AIT:E TR
MT41K256M16HA-125 M AIT:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16HA-125 M:E TR
MT41K256M16HA-125 M:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
M29W128GL70ZS3E
M29W128GL70ZS3E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA
M25P40-VMW6GB
M25P40-VMW6GB
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO W