Overview
The PCF85102C-2T/03:11, produced by NXP USA Inc., is a 256 x 8-bit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) with an I2C-bus interface. This device features non-volatile storage of 2 kbits, organized as 256 x 8-bit, and is designed for low power consumption using full CMOS technology. It includes an on-chip voltage multiplier and supports both byte and page write modes, as well as sequential and random read operations. The device is highly reliable, with internal redundant storage code to protect against single bit errors and a high endurance of 1,000,000 Erase/Write cycles.
Key Specifications
Parameter | Conditions | Min | Max | Unit | |
---|---|---|---|---|---|
VDD (Supply Voltage) | - | 2.5 | - | 6.0 | V |
IDDR (Supply Current Read) | fSCL = 100 kHz, VDD = 2.5 V | - | - | 60 | µA |
IDDR (Supply Current Read) | fSCL = 100 kHz, VDD = 6 V | - | - | 200 | µA |
IDDW (Supply Current E/W) | fSCL = 100 kHz, VDD = 2.5 V | - | - | 0.6 | mA |
IDDW (Supply Current E/W) | fSCL = 100 kHz, VDD = 6 V | - | - | 2.0 | mA |
IDD(stb) (Standby Supply Current) | VDD = 2.5 V | - | - | 3.5 | µA |
IDD(stb) (Standby Supply Current) | VDD = 6 V | - | - | 10 | µA |
Vi (Input Voltage on any Input Pin) | |Zi| > 500 Ω | VSS - 0.8 | - | 6.5 | V |
Tamb (Operating Ambient Temperature) | - | -40 | - | 85 | °C |
Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
Key Features
- Low power CMOS technology with maximum operating current of 2.0 mA and typical standby current of 4 µA at 6.0 V.
- Non-volatile storage of 2 kbits organized as 256 x 8-bit.
- Single supply with full operation down to 2.5 V.
- On-chip voltage multiplier.
- Serial input/output I2C-bus interface.
- Byte and 8-byte page write modes.
- Sequential and random read operations.
- Internal timer for writing (no external components needed).
- Internal power-on reset.
- Clock frequency range of 0 kHz to 100 kHz.
- High reliability with redundant storage code.
- Endurance of 1,000,000 Erase/Write cycles at 22 °C.
- 10 years non-volatile data retention time.
- Pin and address compatible with PCF8570, PCF8571, PCF8572, PCA8581, PCF8582.
- Pin compatible (with different address) to PCF85103.
- ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101.
- Latch-up testing to JEDEC Standard JESD78 which exceeds 100 mA.
- Offered in DIP8 and SO8 packages.
Applications
The PCF85102C-2T/03:11 is suitable for a variety of applications requiring non-volatile memory, including:
- Industrial control systems.
- Consumer electronics.
- Automotive systems.
- Medical devices.
- Any system requiring low power, reliable, and compact non-volatile memory solutions.
Q & A
- What is the storage capacity of the PCF85102C-2T/03:11?
The PCF85102C-2T/03:11 has a non-volatile storage capacity of 2 kbits, organized as 256 x 8-bit. - What is the operating voltage range of the PCF85102C-2T/03:11?
The device operates with a supply voltage range of 2.5 V to 6.0 V. - What is the maximum operating current of the PCF85102C-2T/03:11?
The maximum operating current is 2.0 mA. - What is the standby current of the PCF85102C-2T/03:11?
The typical standby current is 4 µA at 6.0 V. - What interface does the PCF85102C-2T/03:11 use for data communication?
The device uses a serial I2C-bus interface for data communication. - How many devices can be connected to the I2C-bus?
Up to eight PCF85102C-2 devices can be connected to the I2C-bus. - What is the endurance of the PCF85102C-2T/03:11?
The device has an endurance of 1,000,000 Erase/Write cycles at 22 °C. - What is the data retention time of the PCF85102C-2T/03:11?
The device has a non-volatile data retention time of 10 years. - What are the available package types for the PCF85102C-2T/03:11?
The device is offered in DIP8 and SO8 packages. - Does the PCF85102C-2T/03:11 have ESD protection?
Yes, the device has ESD protection that exceeds 2000 V HBM per JESD22-A114, 150 V MM per JESD22-A115, and 1000 V CDM per JESD22-C101.