Overview
The MT41K256M16HA-125 XIT:E is a DDR3L SDRAM module produced by Micron Technology Inc. This module is designed to provide high-speed and efficient memory capabilities for various electronic devices. It offers a capacity of 4 Gigabits, organized in a 256M x 16 configuration, and operates at a speed of 800 MHz. The module is well-suited for applications requiring high-performance memory solutions and is backward compatible with 1.5V DDR3 applications.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | MT41K256M16HA-125 XIT:E |
| Manufacturer | Micron Technology Inc. |
| Package / Case | 96-TFBGA (9x14) |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4 Gb (256M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 13.75 ns |
| Voltage - Supply | 1.283 V ~ 1.45 V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
Key Features
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- Automatic self refresh (ASR)
- Write leveling
- Multipurpose register
- Output driver calibration
Applications
The MT41K256M16HA-125 XIT:E DDR3L SDRAM module is suitable for a wide range of electronic applications that demand reliable and high-performance memory solutions. These include:
- Mobile devices: Compatible with various mobile devices, providing high-speed memory capabilities.
- Server and data center applications: Ideal for high-performance computing and data storage needs.
- Embedded systems: Suitable for embedded systems requiring efficient and reliable memory.
- Consumer electronics: Used in various consumer electronic devices such as laptops, tablets, and gaming consoles.
Q & A
- Q: What is the operational voltage range for the MT41K256M16HA-125 XIT:E?
A: The operational voltage range for this module is typically 1.283V ~ 1.45V.
- Q: Is the MT41K256M16HA-125 XIT:E compatible with mobile devices?
A: Yes, this DDR3 SDRAM module is compatible with various mobile devices, providing high-speed memory capabilities for mobile applications.
- Q: What is the memory size and organization of the MT41K256M16HA-125 XIT:E?
A: The memory size is 4 Gb, organized in a 256M x 16 configuration.
- Q: What is the clock frequency of the MT41K256M16HA-125 XIT:E?
A: The clock frequency is 800 MHz.
- Q: What is the access time of the MT41K256M16HA-125 XIT:E?
A: The access time is 13.75 ns.
- Q: What is the operating temperature range of the MT41K256M16HA-125 XIT:E?
A: The operating temperature range is -40°C ~ 95°C (TC).
- Q: Is the MT41K256M16HA-125 XIT:E backward compatible with DDR3 applications?
A: Yes, it is backward compatible with 1.5V DDR3 applications.
- Q: What type of package does the MT41K256M16HA-125 XIT:E use?
A: It uses a 96-TFBGA (9x14) package.
- Q: Does the MT41K256M16HA-125 XIT:E support self refresh mode?
A: Yes, it supports self refresh mode and automatic self refresh (ASR).
- Q: What are some key features of the MT41K256M16HA-125 XIT:E?
A: Key features include differential bidirectional data strobe, 8n-bit prefetch architecture, differential clock inputs, and programmable CAS latencies.
- Q: Where can I find detailed technical specifications for the MT41K256M16HA-125 XIT:E?
A: Detailed technical specifications can be found in the datasheet available from the manufacturer's website or authorized distributors.
