Overview
The MT29F1G08ABAEAWP-IT:E TR is a 1 Gbit Single-Level Cell (SLC) NAND Flash memory device manufactured by Micron Technology Inc. This component is designed to provide high reliability and performance in various industrial applications. It features a 48-pin TSOP-I package and operates within an industrial temperature range of -40°C to +85°C, making it suitable for demanding environments.
Key Specifications
| Attribute | Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Part Number | MT29F1G08ABAEAWP-IT:E |
| Memory Type | SLC NAND Flash |
| Memory Size | 1 Gbit (128M x 8bit) |
| Package | 48-pin TSOP-I |
| Operating Voltage | 2.7V to 3.6V |
| Operating Temperature | -40°C to +85°C (Industrial) |
| Interface | Parallel |
| Page Size | 2112 bytes (2048 + 64 bytes) for x8, 1056 words (1024 + 32 words) for x16 |
| Block Size | 64 pages (128K + 4K bytes) |
| Plane Size | 2 planes x 512 blocks per plane |
| Read Page Time | 25 μs (Typical) |
| Program Page Time | 200 μs (Typical, 3.3V and 1.8V) |
| Erase Block Time | 700 μs (Typical) |
| Endurance | 100,000 PROGRAM/ERASE cycles |
| Data Retention | JESD47 compliant |
Key Features
- Single-Level Cell (SLC) Technology: Provides higher endurance and reliability compared to MLC NAND.
- ONFI 1.0 Compliance: Supports the Open NAND Flash Interface standard for compatibility with various systems.
- Ready/Busy (R/B) Signal: Allows hardware detection of operation completion.
- Write Protect (WP) Signal: Enables write protection for the entire device.
- Two-Plane Operation: Supports simultaneous operations on two planes, enhancing performance.
- Industrial Temperature Range: Operates reliably from -40°C to +85°C.
- Low Power Consumption: Nominal supply current of 35 mA.
- High-Speed Interface: Supports asynchronous I/O with read and write times as low as 20 ns (3.3V) and 25 ns (1.8V).
Applications
The MT29F1G08ABAEAWP-IT:E TR is suitable for a variety of industrial and embedded applications, including:
- Industrial control systems
- Automotive systems
- Aerospace and defense systems
- Medical devices
- High-reliability storage solutions
- Embedded systems requiring robust storage
Q & A
- What is the memory size of the MT29F1G08ABAEAWP-IT:E TR?
The memory size is 1 Gbit, organized as 128M x 8bit.
- What is the operating voltage range of this NAND Flash?
The operating voltage range is 2.7V to 3.6V.
- What is the temperature range for this device?
The device operates within an industrial temperature range of -40°C to +85°C.
- What type of interface does this NAND Flash use?
The device uses a parallel interface.
- What is the page size for this NAND Flash?
The page size is 2112 bytes (2048 + 64 bytes) for x8 and 1056 words (1024 + 32 words) for x16.
- How many PROGRAM/ERASE cycles can this device endure?
The device can endure up to 100,000 PROGRAM/ERASE cycles.
- What is the data retention specification for this device?
The data retention is JESD47 compliant.
- Does this device support write protection?
Yes, it supports write protection for the entire device via the WP signal.
- What is the package type for this NAND Flash?
The package type is 48-pin TSOP-I.
- Is this device compliant with any industry standards?
Yes, it is compliant with the ONFI 1.0 specification.
