MT40A512M16LY-062E AIT:E TR
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Micron Technology Inc. MT40A512M16LY-062E AIT:E TR

Manufacturer No:
MT40A512M16LY-062E AIT:E TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 8GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT40A512M16LY-062E AIT:E TR is a high-performance DDR4 SDRAM chip manufactured by Micron Technology Inc. This component is designed to provide robust memory solutions for a wide range of applications, including server, storage, and networking systems. With its advanced features and high-speed performance, it is an ideal choice for systems requiring high memory bandwidth and low power consumption.

Key Specifications

Parameter Value
Manufacturer Micron Technology Inc.
Memory Type DDR4 SDRAM
Memory Size 8 Gb (512 M x 16)
Memory Interface Parallel
Clock Frequency 1.6 GHz
Access Time 625 ps
Supply Voltage 1.2 V ± 60 mV
Operating Temperature -40°C to 95°C
Package / Case 96-TFBGA
No. of Pins 96 Pins
RoHS Compliance Yes

Key Features

  • On-die, internal, adjustable VREFDQ generation
  • 1.2V pseudo open-drain I/O
  • Refresh time of 8192-cycle at various temperature ranges
  • 16 internal banks (x8): 4 groups of 4 banks each; 8 internal banks (x16): 2 groups of 4 banks each
  • 8n-bit prefetch architecture
  • Programmable data strobe preambles and data strobe preamble training
  • Command/Address latency (CAL)
  • Multipurpose register read and write capability
  • Write leveling and self refresh mode
  • Low-power auto self refresh (LPASR) and temperature controlled refresh (TCR)
  • Fine granularity refresh and self refresh abort
  • Maximum power saving and output driver calibration
  • Nominal, park, and dynamic on-die termination (ODT)
  • Data bus inversion (DBI) for data bus and command/address (CA) parity
  • Databus write cyclic redundancy check (CRC) and per-DRAM addressability
  • Connectivity test and JEDEC JESD-79-4 compliance
  • sPPR and hPPR capability, MBIST-PPR support (Die Revision R only), and AEC-Q100 compliance

Applications

The MT40A512M16LY-062E AIT:E TR is suitable for various high-performance applications, including:

  • Server systems requiring high memory bandwidth and reliability
  • Storage systems such as SSDs and storage arrays
  • Networking equipment like routers and switches
  • Embedded systems in industrial and automotive environments
  • Data centers and cloud computing infrastructure

Q & A

  1. What is the memory type of the MT40A512M16LY-062E AIT:E TR?

    The memory type is DDR4 SDRAM.

  2. What is the memory size and configuration of this component?

    The memory size is 8 Gb, configured as 512 M x 16.

  3. What is the clock frequency of this DDR4 SDRAM?

    The clock frequency is 1.6 GHz.

  4. What is the supply voltage for this component?

    The supply voltage is 1.2 V ± 60 mV.

  5. What is the operating temperature range for this component?

    The operating temperature range is -40°C to 95°C.

  6. What package type does this component use?

    The package type is 96-TFBGA.

  7. Is this component RoHS compliant?

    Yes, it is RoHS compliant.

  8. What are some of the advanced features of this DDR4 SDRAM?

    Features include on-die VREFDQ generation, programmable data strobe preambles, and low-power auto self refresh (LPASR), among others.

  9. What are the typical applications for this component?

    Typical applications include server systems, storage systems, networking equipment, and embedded systems.

  10. Does this component support AEC-Q100 compliance?

    Yes, it supports AEC-Q100 compliance.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:8Gb (512M x 16)
Memory Interface:Parallel
Clock Frequency:1.6 GHz
Write Cycle Time - Word, Page:15ns
Access Time:19 ns
Voltage - Supply:1.14V ~ 1.26V
Operating Temperature:-40°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (7.5x13.5)
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