Overview
The MT29F2G08ABAEAWP:E is a high-performance NAND Flash memory chip manufactured by Micron Technology. This 2-gigabyte memory device is designed to meet the demands of modern data-intensive applications with its fast read and program speeds. The chip features single-level cell (SLC) technology, which ensures high reliability and durability. It is compliant with the Open NAND Flash Interface (ONFI) 1.0 standard and supports various advanced commands and protection features, making it a dependable choice for a wide range of electronic devices.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Micron Technology |
| Part Number | MT29F2G08ABAEAWP:E |
| Memory Type | NAND Flash |
| Memory Size | 2 Gb (256M x 8) |
| Interface | Parallel, Asynchronous |
| Operating Voltage Range | 2.7V to 3.6V |
| Operating Temperature Range | 0°C to 70°C (Commercial), -40°C to 85°C (Industrial) |
| Package Type | 48-pin TSOP-I |
| Page Size | 2112 bytes (2048 + 64 bytes) |
| Block Size | 64 pages (128K + 4K bytes) |
| Read Access Time | 25ns (typical) |
| Program Page Time | 200µs (typical) |
| Erase Block Time | 700µs (typical) |
| Data Retention | More than 5 years at 25°C |
| RoHS Compliance | Yes |
Key Features
- High Performance: Fast read and program speeds, including read access times as low as 25ns.
- SLC Technology: Single-level cell technology for high reliability and durability.
- ONFI Compliance: Compliant with the Open NAND Flash Interface (ONFI) 1.0 standard.
- Advanced Commands: Supports program page cache mode, read page cache mode, one-time programmable (OTP) mode, two-plane commands, and interleaved die (LUN) operations.
- Error Correction Code (ECC): Built-in ECC functionality to ensure data integrity and reliability.
- Protection Features: Includes hardware write protection and operation status byte for detecting operation completion and pass/fail conditions.
- Low Power Consumption: Designed for low power consumption, making it suitable for a variety of applications.
Applications
- Automotive: Used in infotainment systems, navigation systems, and control modules.
- Industrial: Used in industrial automation, robotics, and control systems.
- Consumer Electronics: Used in smartphones, tablets, digital cameras, and smartwatches.
- Networking: Used in routers, switches, and communication equipment.
- Medical: Used in medical devices and equipment.
- Security Cameras and Entertainment Systems: Suitable for applications requiring reliable and durable non-volatile memory solutions.
Q & A
- What is the capacity of the MT29F2G08ABAEAWP:E NAND Flash memory chip?
The capacity of the MT29F2G08ABAEAWP:E is 2 gigabytes (256M x 8).
- What is the operating voltage range of the MT29F2G08ABAEAWP:E?
The operating voltage range is 2.7V to 3.6V.
- What is the typical read access time of the MT29F2G08ABAEAWP:E?
The typical read access time is 25ns.
- Does the MT29F2G08ABAEAWP:E support ECC?
Yes, it supports built-in error correction code (ECC) functionality.
- What is the package type of the MT29F2G08ABAEAWP:E?
The package type is a 48-pin TSOP-I.
- What are the typical program and erase times for the MT29F2G08ABAEAWP:E?
The typical program page time is 200µs, and the typical erase block time is 700µs.
- Is the MT29F2G08ABAEAWP:E RoHS compliant?
Yes, it is RoHS compliant.
- What are some common applications of the MT29F2G08ABAEAWP:E?
Common applications include automotive systems, industrial automation, consumer electronics, networking equipment, and medical devices.
- What is the data retention period of the MT29F2G08ABAEAWP:E?
The data retention period is more than 5 years at 25°C.
- Does the MT29F2G08ABAEAWP:E support multiple program and erase cycles?
Yes, it supports multiple program and erase cycles, making it ideal for applications requiring frequent data updates.
