MT25QL512ABB8ESF-0AAT
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Micron Technology Inc. MT25QL512ABB8ESF-0AAT

Manufacturer No:
MT25QL512ABB8ESF-0AAT
Manufacturer:
Micron Technology Inc.
Package:
Bulk
Description:
IC FLASH 512MBIT SPI 16SOP2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT25QL512ABB8ESF-0AAT is a high-performance, 512Mb, 3V Multiple I/O Serial Flash memory device produced by Micron Technology Inc. This device is designed to provide fast and reliable non-volatile memory solutions for a variety of applications. It features a SPI-compatible serial bus interface with single and double transfer rate (STR/DTR) capabilities, enhancing data transfer speeds significantly.

Key Specifications

ParameterValue
Memory Size512Mb (64M x 8)
Voltage Range2.7–3.6V
Clock FrequencyUp to 133 MHz (STR), up to 90 MHz (DTR)
Transfer RateUp to 90 MB/s with dual/quad I/O commands
Erase CapabilityBulk erase, sector erase (64KB), subsector erase (4KB, 32KB)
Operating Temperature Range–40°C to +85°C, –40°C to +105°C, –40°C to +125°C
Package OptionsJEDEC-standard, RoHS-compliant: 24-ball T-PBGA, 16-pin SOP2, W-PDFN-8
Data Retention20 years (typical)
EnduranceMinimum 100,000 ERASE cycles per sector

Key Features

  • SPI-compatible serial bus interface with single and double transfer rate (STR/DTR)
  • Dual and quad I/O commands for increased throughput
  • Execute-in-place (XIP) capability
  • PROGRAM/ERASE SUSPEND operations
  • Volatile and nonvolatile configuration settings
  • Software reset and reset pin available
  • 3-byte and 4-byte address modes for memory access beyond 128Mb
  • Dedicated 64-byte OTP area outside main memory
  • Security features including volatile and nonvolatile locking, software write protection, and hardware write protection
  • JESD47H-compliant with minimum 100,000 ERASE cycles per sector

Applications

The MT25QL512ABB8ESF-0AAT is suitable for a wide range of applications that require high-performance, non-volatile memory. These include:

  • Embedded systems
  • Industrial control systems
  • Automotive systems
  • Consumer electronics
  • Networking and telecommunications equipment

Q & A

  1. What is the memory size of the MT25QL512ABB8ESF-0AAT?
    The memory size is 512Mb (64M x 8).
  2. What is the voltage range for this device?
    The voltage range is 2.7–3.6V.
  3. What are the maximum clock frequencies for STR and DTR modes?
    The maximum clock frequency is 133 MHz for STR and 90 MHz for DTR.
  4. What are the erase capabilities of this device?
    The device supports bulk erase, sector erase (64KB), and subsector erase (4KB, 32KB).
  5. What is the data retention period for this device?
    The data retention period is 20 years (typical).
  6. How many ERASE cycles can each sector endure?
    Each sector can endure a minimum of 100,000 ERASE cycles.
  7. What are the available package options for this device?
    The available packages include JEDEC-standard, RoHS-compliant: 24-ball T-PBGA, 16-pin SOP2, W-PDFN-8.
  8. Does the device support execute-in-place (XIP) capability?
    Yes, the device supports execute-in-place (XIP) capability.
  9. What security features does the device offer?
    The device offers volatile and nonvolatile locking, software write protection, and hardware write protection.
  10. What is the operating temperature range for this device?
    The operating temperature range is –40°C to +85°C, –40°C to +105°C, and –40°C to +125°C.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:512Mb (64M x 8)
Memory Interface:SPI
Clock Frequency:133 MHz
Write Cycle Time - Word, Page:8ms, 2.8ms
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 105°C (TA)
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:16-SOP2
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Similar Products

Part Number MT25QL512ABB8ESF-0AAT MT25QU512ABB8ESF-0AAT
Manufacturer Micron Technology Inc. Micron Technology Inc.
Product Status Active Active
Memory Type Non-Volatile Non-Volatile
Memory Format Flash Flash
Technology FLASH - NOR FLASH - NOR
Memory Size 512Mb (64M x 8) 512Mb (64M x 8)
Memory Interface SPI SPI
Clock Frequency 133 MHz 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms 8ms, 2.8ms
Access Time - -
Voltage - Supply 2.7V ~ 3.6V 1.7V ~ 2V
Operating Temperature -40°C ~ 105°C (TA) -40°C ~ 105°C (TA)
Mounting Type Surface Mount Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width) 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOP2 16-SO

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