M29W320DB80ZA3E
  • Share:

Micron Technology Inc. M29W320DB80ZA3E

Manufacturer No:
M29W320DB80ZA3E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 32MBIT PARALLEL 63TFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29W320DB80ZA3E is a flash memory component produced by Micron Technology Inc. This device is part of Micron's NOR flash memory family, designed to provide high-density storage solutions for a variety of applications. The M29W320DB80ZA3E offers a balance of performance, reliability, and power efficiency, making it suitable for use in embedded systems, consumer electronics, and industrial devices.

Key Specifications

Parameter Value
Memory Type NOR Flash
Memory Capacity 32 Mbits (4 Mbytes)
Organization 2 Mbits x 16 bits or 4 Mbits x 8 bits
Voltage Range 2.7V to 3.6V
Interface Asynchronous
Package Type TSSOP, BGA, etc.
Operating Temperature -40°C to 85°C (Industrial Grade)
Read Access Time 80 ns (typical)
Write/Erase Cycles 100,000 cycles (minimum)

Key Features

  • High-density storage in a compact package
  • Low power consumption for battery-powered devices
  • Fast read access times for high-performance applications
  • Robust write/erase endurance for reliable operation
  • Wide operating temperature range for industrial and automotive use
  • Multiple package options for flexibility in design

Applications

  • Embedded systems and microcontrollers
  • Consumer electronics such as set-top boxes and gaming consoles
  • Industrial control systems and automation
  • Automotive systems requiring high reliability and temperature tolerance
  • Medical devices and healthcare equipment

Q & A

  1. What is the memory capacity of the M29W320DB80ZA3E?

    The memory capacity is 32 Mbits (4 Mbytes).

  2. What is the voltage range for this device?

    The voltage range is 2.7V to 3.6V.

  3. What are the typical read access times for this device?

    The typical read access time is 80 ns.

  4. How many write/erase cycles can this device endure?

    The device can endure a minimum of 100,000 write/erase cycles.

  5. What are the operating temperature ranges for this device?

    The operating temperature range is -40°C to 85°C (Industrial Grade).

  6. What types of packages are available for this device?

    The device is available in TSSOP, BGA, and other package types.

  7. Is this device suitable for automotive applications?
  8. Can this device be used in battery-powered devices?
  9. What are some common applications for this device?
  10. Does Micron provide any specific documentation for this device?

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:32Mb (4M x 8, 2M x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:80ns
Access Time:80 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:63-TFBGA
Supplier Device Package:63-TFBGA (7x11)
0 Remaining View Similar

In Stock

-
61

Please send RFQ , we will respond immediately.

Same Series
M29W320DB70N6E
M29W320DB70N6E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB70N6F TR
M29W320DB70N6F TR
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DT70N3E
M29W320DT70N3E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB70N3E
M29W320DB70N3E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB7AN6E
M29W320DB7AN6E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB80ZA3E
M29W320DB80ZA3E
IC FLASH 32MBIT PARALLEL 63TFBGA

Related Product By Categories

AT24C02D-STUM-T
AT24C02D-STUM-T
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ SOT23-5
M24C32-DRMF3TG/K
M24C32-DRMF3TG/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8MLP
24LC128T-I/SN
24LC128T-I/SN
Microchip Technology
IC EEPROM 128KBIT I2C 8SOIC
CAT24M01HU5I-GT3
CAT24M01HU5I-GT3
onsemi
IC EEPROM 1MBIT I2C 1MHZ 8UDFN
M24C02-RMN6P
M24C02-RMN6P
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
MT25QL01GBBB8ESF-0AAT
MT25QL01GBBB8ESF-0AAT
Micron Technology Inc.
IC FLASH 1GBIT SPI 133MHZ 16SO
M95040-DRDW8TP/K
M95040-DRDW8TP/K
STMicroelectronics
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP
W25Q128JVEIQ TR
W25Q128JVEIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
MT25QU256ABA1EW7-0SIT TR
MT25QU256ABA1EW7-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
M27C512-12C1
M27C512-12C1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M29F010B70K6F TR
M29F010B70K6F TR
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32PLCC
M93C46-RDS6TG
M93C46-RDS6TG
STMicroelectronics
IC EEPROM 1KBIT SPI 1MHZ 8TSSOP

Related Product By Brand

MT41K256M16TW-107 AAT:P
MT41K256M16TW-107 AAT:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT25QU01GBBB8ESF-0SIT TR
MT25QU01GBBB8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 1GBIT SPI 166MHZ 16SO
MT40A512M16LY-062E AUT:E TR
MT40A512M16LY-062E AUT:E TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
M28W320FCB70ZB6E
M28W320FCB70ZB6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 47TFBGA
M29DW323DT70N6E
M29DW323DT70N6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M25P40-VMN3TPB TR
M25P40-VMN3TPB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M25P80-VMN3TPB TR
M25P80-VMN3TPB TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M25P16-VMN6TPBA TR
M25P16-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M29W640GL70NB6F TR
M29W640GL70NB6F TR
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 56TSOP
M29W640FT70ZA6F TR
M29W640FT70ZA6F TR
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TFBGA
M25P40-VMP6TGB0A TR
M25P40-VMP6TGB0A TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8VDFPN
MT29F8G08ABBCAH4-IT:C
MT29F8G08ABBCAH4-IT:C
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 63VFBGA