M29W320DB80ZA3E
  • Share:

Micron Technology Inc. M29W320DB80ZA3E

Manufacturer No:
M29W320DB80ZA3E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 32MBIT PARALLEL 63TFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29W320DB80ZA3E is a flash memory component produced by Micron Technology Inc. This device is part of Micron's NOR flash memory family, designed to provide high-density storage solutions for a variety of applications. The M29W320DB80ZA3E offers a balance of performance, reliability, and power efficiency, making it suitable for use in embedded systems, consumer electronics, and industrial devices.

Key Specifications

Parameter Value
Memory Type NOR Flash
Memory Capacity 32 Mbits (4 Mbytes)
Organization 2 Mbits x 16 bits or 4 Mbits x 8 bits
Voltage Range 2.7V to 3.6V
Interface Asynchronous
Package Type TSSOP, BGA, etc.
Operating Temperature -40°C to 85°C (Industrial Grade)
Read Access Time 80 ns (typical)
Write/Erase Cycles 100,000 cycles (minimum)

Key Features

  • High-density storage in a compact package
  • Low power consumption for battery-powered devices
  • Fast read access times for high-performance applications
  • Robust write/erase endurance for reliable operation
  • Wide operating temperature range for industrial and automotive use
  • Multiple package options for flexibility in design

Applications

  • Embedded systems and microcontrollers
  • Consumer electronics such as set-top boxes and gaming consoles
  • Industrial control systems and automation
  • Automotive systems requiring high reliability and temperature tolerance
  • Medical devices and healthcare equipment

Q & A

  1. What is the memory capacity of the M29W320DB80ZA3E?

    The memory capacity is 32 Mbits (4 Mbytes).

  2. What is the voltage range for this device?

    The voltage range is 2.7V to 3.6V.

  3. What are the typical read access times for this device?

    The typical read access time is 80 ns.

  4. How many write/erase cycles can this device endure?

    The device can endure a minimum of 100,000 write/erase cycles.

  5. What are the operating temperature ranges for this device?

    The operating temperature range is -40°C to 85°C (Industrial Grade).

  6. What types of packages are available for this device?

    The device is available in TSSOP, BGA, and other package types.

  7. Is this device suitable for automotive applications?
  8. Can this device be used in battery-powered devices?
  9. What are some common applications for this device?
  10. Does Micron provide any specific documentation for this device?

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:32Mb (4M x 8, 2M x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:80ns
Access Time:80 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:63-TFBGA
Supplier Device Package:63-TFBGA (7x11)
0 Remaining View Similar

In Stock

-
61

Please send RFQ , we will respond immediately.

Same Series
M29W320DB70N6E
M29W320DB70N6E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB70N6F TR
M29W320DB70N6F TR
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DT70N3E
M29W320DT70N3E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB70N3E
M29W320DB70N3E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB7AN6E
M29W320DB7AN6E
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320DB80ZA3E
M29W320DB80ZA3E
IC FLASH 32MBIT PARALLEL 63TFBGA

Related Product By Categories

W25Q512JVEIQ
W25Q512JVEIQ
Winbond Electronics
IC FLASH 512MBIT SPI/QUAD 8WSON
CAS24S128C4ATR
CAS24S128C4ATR
onsemi
IC MEM EEPROM 128KB I2C 4WLCSP
M24C02-DRMF3TG/K
M24C02-DRMF3TG/K
STMicroelectronics
IC EEPROM 2KBIT I2C 1MHZ 8MLP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
MX25L3233FM1I-08G
MX25L3233FM1I-08G
Macronix
IC FLASH 32MBIT SPI/QUAD 8SOP
AT24C02-10PI-2.5
AT24C02-10PI-2.5
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
AT24C02AN-10SC-2.7
AT24C02AN-10SC-2.7
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C1001-10F1
M27C1001-10F1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32CDIP
M27C512-90C1
M27C512-90C1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
AT45DB041D-SU-SL954
AT45DB041D-SU-SL954
Adesto Technologies
IC FLASH 4MBIT SPI 66MHZ 8SOIC
M25P80-VMN6TPBA TR
M25P80-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
N25Q128A13ESE40F TR
N25Q128A13ESE40F TR
Micron Technology Inc.
IC FLASH 128MBIT SPI 108MHZ 8SO

Related Product By Brand

MT29F1G08ABAEAWP-IT:E TR
MT29F1G08ABAEAWP-IT:E TR
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 48TSOP I
MT41K128M16JT-125 AIT:K TR
MT41K128M16JT-125 AIT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT25QU256ABA8E12-1SIT TR
MT25QU256ABA8E12-1SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 24TPBGA
MTFC8GAMALBH-AAT
MTFC8GAMALBH-AAT
Micron Technology Inc.
IC FLASH 64GBIT MMC 153TFBGA
M29F040B90K1
M29F040B90K1
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
M29W800DT70ZE6E
M29W800DT70ZE6E
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M50FW080N5TG TR
M50FW080N5TG TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP
M25P80-VMW6TG TR
M25P80-VMW6TG TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M29W128GL70N6F TR
M29W128GL70N6F TR
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP
MT41K128M16JT-125 M AIT:K TR
MT41K128M16JT-125 M AIT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT41K1G8SN-125:A
MT41K1G8SN-125:A
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
MT41K256M16TW-107 AT:P TR
MT41K256M16TW-107 AT:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA