Overview
The BC857C-TP is a PNP general-purpose transistor manufactured by Micro Commercial Co. It is part of the BC857 series, known for its reliability and versatility in various electronic applications. This transistor is packaged in a small SOT-23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -45 | V | Open base |
| Collector Current (DC) | IC | - | - | -100 | mA | |
| Peak Collector Current | ICM | - | - | -200 | mA | Pulsed; tp ≤ 300 μs; δ ≤ 0.02 |
| Peak Base Current | IBM | - | - | -200 | mA | Pulsed; tp ≤ 300 μs; δ ≤ 0.02 |
| Total Power Dissipation | Ptot | - | - | 250 | mW | Tamb ≤ 25 °C |
| Junction Temperature | Tj | - | - | 150 | °C | |
| Storage Temperature | Tstg | -65 | - | 150 | °C | |
| DC Current Gain (hFE) | hFE | 420 | - | 800 | - | IC = -2 mA; VCE = -5 V |
| Collector-Emitter Saturation Voltage | VCEsat | -75 | - | -300 | mV | IC = -10 mA; IB = -0.5 mA |
| Base-Emitter Saturation Voltage | VBEsat | -700 | - | - | mV | IC = -10 mA; IB = -0.5 mA |
Key Features
- Compact Packaging: The BC857C-TP is packaged in a small SOT-23 (TO-236AB) surface-mounted device (SMD) plastic package, ideal for space-saving designs.
- High Current Gain: The transistor offers a high DC current gain (hFE) ranging from 420 to 800, making it suitable for a variety of amplification and switching applications.
- Low Saturation Voltages: It features low collector-emitter and base-emitter saturation voltages, which help in reducing power consumption and improving efficiency.
- Wide Operating Temperature Range: The transistor can operate over a wide temperature range from -55°C to 150°C, making it reliable in diverse environmental conditions.
- Halogen-Free and RoHS Compliant: The device is halogen-free and RoHS compliant, aligning with modern environmental and safety standards.
Applications
- Switching Applications: The BC857C-TP is suitable for switching applications due to its high current gain and low saturation voltages.
- Audio Frequency (AF) Amplifiers: It can be used in AF amplifier circuits where high fidelity and low noise are required.
- General-Purpose Amplification: The transistor is versatile and can be used in various general-purpose amplification circuits.
- Automotive and Industrial Electronics: Its wide operating temperature range makes it suitable for use in automotive and industrial electronic systems.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC857C-TP transistor?
The maximum collector-emitter voltage (VCEO) of the BC857C-TP transistor is -45 V.
- What is the maximum collector current (IC) of the BC857C-TP transistor?
The maximum collector current (IC) of the BC857C-TP transistor is -100 mA.
- What is the peak collector current (ICM) of the BC857C-TP transistor?
The peak collector current (ICM) of the BC857C-TP transistor is -200 mA (pulsed; tp ≤ 300 μs; δ ≤ 0.02).
- What is the DC current gain (hFE) range of the BC857C-TP transistor?
The DC current gain (hFE) range of the BC857C-TP transistor is from 420 to 800.
- What is the operating temperature range of the BC857C-TP transistor?
The operating temperature range of the BC857C-TP transistor is from -55°C to 150°C.
- Is the BC857C-TP transistor RoHS compliant?
Yes, the BC857C-TP transistor is RoHS compliant and halogen-free.
- What type of package does the BC857C-TP transistor use?
The BC857C-TP transistor is packaged in a SOT-23 (TO-236AB) surface-mounted device (SMD) plastic package.
- What are some common applications of the BC857C-TP transistor?
The BC857C-TP transistor is commonly used in switching applications, AF amplifiers, general-purpose amplification, and in automotive and industrial electronics.
- What is the total power dissipation (Ptot) of the BC857C-TP transistor?
The total power dissipation (Ptot) of the BC857C-TP transistor is 250 mW at Tamb ≤ 25 °C.
- What is the collector-emitter saturation voltage (VCEsat) of the BC857C-TP transistor?
The collector-emitter saturation voltage (VCEsat) of the BC857C-TP transistor is between -75 mV and -300 mV (IC = -10 mA; IB = -0.5 mA).
