1N914T/R
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EIC SEMICONDUCTOR INC. 1N914T/R

Manufacturer No:
1N914T/R
Manufacturer:
EIC SEMICONDUCTOR INC.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 75MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N914T/R is a high-speed switching diode manufactured by EIC Semiconductor Inc. This component is designed for high-frequency applications and is known for its fast switching times and low forward voltage drop. The 1N914T/R is part of EIC's extensive portfolio of discrete semiconductors, which are recognized for their high quality and reliability.

Key Specifications

Parameter Value Unit
Maximum Average Forward Current (IF(AV)) 200 mA
Peak Forward Surge Current (IFSM) 2 A
Maximum Reverse Voltage (VRRM) 100 V
Forward Voltage Drop (VF) at IF 1.2 V
Reverse Current (IR) at VR = 100V 5 µA
Reverse Recovery Time (Trr) 4 ns
Operating Temperature Range -65 to 150 °C
Package Type DO-35 (Glass Passivated)

Key Features

  • High-speed switching capability with fast recovery time.
  • Low forward voltage drop, reducing power losses.
  • High reverse voltage rating for robust protection against reverse bias.
  • Compact DO-35 package suitable for a variety of applications.
  • Operating temperature range from -65°C to 150°C, ensuring reliability in diverse environments.

Applications

  • High-frequency switching circuits.
  • Rectifier circuits requiring fast recovery times.
  • Audio and video signal processing.
  • Automotive and industrial control systems.
  • General-purpose switching and rectification in electronic devices.

Q & A

  1. What is the maximum average forward current of the 1N914T/R diode?

    The maximum average forward current (IF(AV)) is 200 mA.

  2. What is the peak forward surge current rating of the 1N914T/R?

    The peak forward surge current (IFSM) is 2 A.

  3. What is the maximum reverse voltage rating of the 1N914T/R?

    The maximum reverse voltage (VRRM) is 100 V.

  4. What is the forward voltage drop of the 1N914T/R at its rated current?

    The forward voltage drop (VF) at the rated current is approximately 1.2 V.

  5. What is the reverse recovery time of the 1N914T/R?

    The reverse recovery time (Trr) is 4 ns.

  6. What is the operating temperature range of the 1N914T/R?

    The operating temperature range is from -65°C to 150°C.

  7. What type of package does the 1N914T/R come in?

    The 1N914T/R comes in a DO-35 (Glass Passivated) package.

  8. What are some common applications of the 1N914T/R diode?

    Common applications include high-frequency switching circuits, rectifier circuits, audio and video signal processing, automotive and industrial control systems, and general-purpose switching and rectification.

  9. Is the 1N914T/R diode suitable for high-frequency applications?

    Yes, the 1N914T/R is designed for high-frequency applications due to its fast switching times and low forward voltage drop.

  10. Is the 1N914T/R diode RoHS compliant?

    Yes, all EIC Semiconductor products, including the 1N914T/R, are RoHS compliant.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):75mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 175°C
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