1N4007W
  • Share:

EIC SEMICONDUCTOR INC. 1N4007W

Manufacturer No:
1N4007W
Manufacturer:
EIC SEMICONDUCTOR INC.
Package:
Tape & Reel (TR)
Description:
STANDARD SOD123FL T/R 3000
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007W rectifier diode, produced by EIC Semiconductor Inc., is a general-purpose rectifier diode designed for converting alternating current (AC) to direct current (DC). It is part of the 1N400x series, known for its high current capability and low-forward voltage drop. This diode is widely used in various electronic circuits and power supply systems due to its robust specifications and reliability.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Forward Voltage @ IF = 1.0 A VFM 1.1 V
Peak Reverse Current @ TA = +25°C at Rated DC Blocking Voltage IRM 5.0 μA μA
Typical Junction Capacitance Cj 15 pF pF
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C °C
Package DO-41 (DO-204AL)

Key Features

  • High Current Capability: The 1N4007W can handle an average forward rectified current of 1.0 A and a peak forward surge current of 30 A for 8.3 ms single half sine-wave.
  • Low Forward Voltage Drop: The diode has a forward voltage of 1.1 V at 1.0 A, ensuring efficient rectification.
  • Surge Overload Rating: It can withstand a peak forward surge current of 30 A.
  • Low Reverse Leakage Current: The diode has a low reverse leakage current of 5.0 μA at rated DC blocking voltage.
  • RoHS Compliant: The diode is lead-free and compliant with the EU’s Restriction of Hazardous Substances Directive (RoHS).
  • High Temperature Range: It operates within a temperature range of -65 to +150 °C.

Applications

The 1N4007W rectifier diode is used in a variety of applications, including:

  • General Purpose Rectification: In power supplies, inverters, converters, and freewheeling diodes.
  • DC Power Supplies: Essential for electronic devices, household appliances, and industrial machinery.
  • Battery Charging Systems: Converts AC power to DC for charging batteries in electric vehicles, laptops, smartphones, and other portable devices.
  • Industrial Processes: Used in electroplating, welding, and electrolysis where controlled DC voltage is required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007W diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007W diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4007W diode?

    The peak forward surge current rating is 30 A for 8.3 ms single half sine-wave.

  4. What is the forward voltage drop of the 1N4007W diode at 1.0 A?

    The forward voltage drop is 1.1 V at 1.0 A.

  5. Is the 1N4007W diode RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  6. What is the operating temperature range of the 1N4007W diode?

    The operating temperature range is -65 to +150 °C.

  7. What package type is the 1N4007W diode available in?

    The diode is available in the DO-41 (DO-204AL) package.

  8. What are some common applications of the 1N4007W diode?

    Common applications include general purpose rectification, DC power supplies, battery charging systems, and industrial processes like electroplating and welding.

  9. What is the typical junction capacitance of the 1N4007W diode?

    The typical junction capacitance is 15 pF.

  10. How much peak reverse current can the 1N4007W diode handle at rated DC blocking voltage?

    The diode can handle a peak reverse current of 5.0 μA at rated DC blocking voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.07
7,897

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76

Related Product By Brand

1N4007
1N4007
EIC SEMICONDUCTOR INC.
DIODE SWITCHING SI 1KV 1A 2-PIN
1N4148T/R
1N4148T/R
EIC SEMICONDUCTOR INC.
SW 150MA, CASE TYPE: DO-35
1N914T/R
1N914T/R
EIC SEMICONDUCTOR INC.
DIODE GEN PURP 75V 75MA DO35
1N4007W
1N4007W
EIC SEMICONDUCTOR INC.
STANDARD SOD123FL T/R 3000
1N4007BULK
1N4007BULK
EIC SEMICONDUCTOR INC.
STD 1A, CASE TYPE: DO-41
1N5343B
1N5343B
EIC SEMICONDUCTOR INC.
DIODE ZENER 7.5V 5W DO15
1N5245BT/R
1N5245BT/R
EIC SEMICONDUCTOR INC.
DIODE ZENER 15V 500MW DO35
1N5349BBULK
1N5349BBULK
EIC SEMICONDUCTOR INC.
DIODE ZENER 12V 5W DO15
1N5361BBULK
1N5361BBULK
EIC SEMICONDUCTOR INC.
DIODE ZENER 27V 5W DO15
1N5363BBULK
1N5363BBULK
EIC SEMICONDUCTOR INC.
DIODE ZENER 30V 5W DO15
1N4733AG
1N4733AG
EIC SEMICONDUCTOR INC.
DIODE ZENER 5.1V 1W DO41
1N5341B
1N5341B
EIC SEMICONDUCTOR INC.
DIODE ZENER 6.2V 5W DO15