1N4007W
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EIC SEMICONDUCTOR INC. 1N4007W

Manufacturer No:
1N4007W
Manufacturer:
EIC SEMICONDUCTOR INC.
Package:
Tape & Reel (TR)
Description:
STANDARD SOD123FL T/R 3000
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007W rectifier diode, produced by EIC Semiconductor Inc., is a general-purpose rectifier diode designed for converting alternating current (AC) to direct current (DC). It is part of the 1N400x series, known for its high current capability and low-forward voltage drop. This diode is widely used in various electronic circuits and power supply systems due to its robust specifications and reliability.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Forward Voltage @ IF = 1.0 A VFM 1.1 V
Peak Reverse Current @ TA = +25°C at Rated DC Blocking Voltage IRM 5.0 μA μA
Typical Junction Capacitance Cj 15 pF pF
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C °C
Package DO-41 (DO-204AL)

Key Features

  • High Current Capability: The 1N4007W can handle an average forward rectified current of 1.0 A and a peak forward surge current of 30 A for 8.3 ms single half sine-wave.
  • Low Forward Voltage Drop: The diode has a forward voltage of 1.1 V at 1.0 A, ensuring efficient rectification.
  • Surge Overload Rating: It can withstand a peak forward surge current of 30 A.
  • Low Reverse Leakage Current: The diode has a low reverse leakage current of 5.0 μA at rated DC blocking voltage.
  • RoHS Compliant: The diode is lead-free and compliant with the EU’s Restriction of Hazardous Substances Directive (RoHS).
  • High Temperature Range: It operates within a temperature range of -65 to +150 °C.

Applications

The 1N4007W rectifier diode is used in a variety of applications, including:

  • General Purpose Rectification: In power supplies, inverters, converters, and freewheeling diodes.
  • DC Power Supplies: Essential for electronic devices, household appliances, and industrial machinery.
  • Battery Charging Systems: Converts AC power to DC for charging batteries in electric vehicles, laptops, smartphones, and other portable devices.
  • Industrial Processes: Used in electroplating, welding, and electrolysis where controlled DC voltage is required.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007W diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007W diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4007W diode?

    The peak forward surge current rating is 30 A for 8.3 ms single half sine-wave.

  4. What is the forward voltage drop of the 1N4007W diode at 1.0 A?

    The forward voltage drop is 1.1 V at 1.0 A.

  5. Is the 1N4007W diode RoHS compliant?

    Yes, the diode is lead-free and RoHS compliant.

  6. What is the operating temperature range of the 1N4007W diode?

    The operating temperature range is -65 to +150 °C.

  7. What package type is the 1N4007W diode available in?

    The diode is available in the DO-41 (DO-204AL) package.

  8. What are some common applications of the 1N4007W diode?

    Common applications include general purpose rectification, DC power supplies, battery charging systems, and industrial processes like electroplating and welding.

  9. What is the typical junction capacitance of the 1N4007W diode?

    The typical junction capacitance is 15 pF.

  10. How much peak reverse current can the 1N4007W diode handle at rated DC blocking voltage?

    The diode can handle a peak reverse current of 5.0 μA at rated DC blocking voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 175°C
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