BAS521LPQ-7B
  • Share:

Diodes Incorporated BAS521LPQ-7B

Manufacturer No:
BAS521LPQ-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GP 325V 400MA X1-DFN1006-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS521LPQ-7B is a small signal switching diode manufactured by Diodes Incorporated. This diode is designed for high-speed switching applications, offering fast switching times and high reliability. It is packaged in a compact SOT23 format, making it suitable for a variety of electronic circuits where space is limited.

Key Specifications

ParameterValue
Maximum Reverse Voltage (V_R)325V
Maximum Forward Current (I_F)200mA
Maximum Reverse Leakage Current (I_R)50nA at V_R = 5V
Forward Voltage Drop (V_F)1.25V at I_F = 100mA
Switching Time (t_rr)Maximum of 50ns
Package TypeSOT23
Operating Temperature Range-55°C to +150°C

Key Features

  • Fast switching speed with a maximum of 50ns recovery time, making it ideal for high-frequency applications.
  • High reverse breakdown voltage of 325V, providing robust protection against reverse voltage surges.
  • Low leakage current of maximum 50nA at 5V reverse voltage, reducing power consumption in standby modes.
  • Compact SOT23 package, suitable for space-constrained designs.
  • Wide operating temperature range from -55°C to +150°C, ensuring reliability in diverse environmental conditions.

Applications

The BAS521LPQ-7B is versatile and can be used in various applications, including:

  • High-speed switching circuits.
  • Signal processing and amplification.
  • Power supply and voltage regulation circuits.
  • Automotive and industrial control systems.
  • Consumer electronics requiring fast and reliable diode performance.

Q & A

  1. What is the maximum reverse voltage of the BAS521LPQ-7B diode?
    The maximum reverse voltage is 325V.
  2. What is the typical forward voltage drop of the BAS521LPQ-7B?
    The forward voltage drop is typically 1.25V at a forward current of 100mA.
  3. What is the switching time of the BAS521LPQ-7B diode?
    The switching time is a maximum of 50ns.
  4. What is the package type of the BAS521LPQ-7B diode?
    The diode is packaged in a SOT23 format.
  5. What is the operating temperature range of the BAS521LPQ-7B?
    The operating temperature range is from -55°C to +150°C.
  6. What are some typical applications of the BAS521LPQ-7B diode?
    Typical applications include high-speed switching circuits, signal processing, power supply circuits, automotive and industrial control systems, and consumer electronics.
  7. What is the maximum forward current rating of the BAS521LPQ-7B diode?
    The maximum forward current rating is 200mA.
  8. How much leakage current can be expected at 5V reverse voltage?
    The leakage current is a maximum of 50nA at 5V reverse voltage.
  9. Is the BAS521LPQ-7B suitable for high-frequency applications?
    Yes, it is suitable due to its fast switching speed and low recovery time.
  10. Where can I find detailed specifications and datasheets for the BAS521LPQ-7B?
    Detailed specifications and datasheets can be found on the Diodes Incorporated website, as well as on distributor sites like Digi-Key and Mouser.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):325 V
Current - Average Rectified (Io):400mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:150 nA @ 250 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:X1-DFN1006-2
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
375

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS521LPQ-7B BAS521LP-7B
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 325 V 325 V
Current - Average Rectified (Io) 400mA (DC) 400mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 100 mA 1.1 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 150 nA @ 250 V 150 nA @ 250 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric)
Supplier Device Package X1-DFN1006-2 X1-DFN1006-2
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
BAS20DWQ-13
BAS20DWQ-13
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT54CT-7
BAT54CT-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
MBR10100CS2TR-E1
MBR10100CS2TR-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO263
BAV21WQ-7-F
BAV21WQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BZX84C3V9TS-7-F
BZX84C3V9TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.9V SOT363
BZX84C6V8S-7
BZX84C6V8S-7
Diodes Incorporated
DIODE ZENER ARRAY 6.8V SOT363
BZX84C12Q-13-F
BZX84C12Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BC817-40-7-F
BC817-40-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3