BAS16VV-7
  • Share:

Diodes Incorporated BAS16VV-7

Manufacturer No:
BAS16VV-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 100V 200MA SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16VV-7 is a high-speed switching diode produced by Diodes Incorporated. It is encapsulated in a very small Surface-Mounted Device (SMD) plastic package, specifically the SOT666 package. This diode is designed for high-speed switching applications and is known for its compact size and robust performance.

Key Specifications

ParameterConditionsMinTypMaxUnit
Forward Current (IF)---200mA
Reverse Voltage (VR)---100V
Reverse Recovery Time (trr)IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA--4ns
Forward Voltage (VF)IF = 1 mA--715mV
Forward Voltage (VF)IF = 10 mA--855mV
Reverse Current (IR)VR = 25 V; Tj = 25 °C--30nA
Diode Capacitance (Cd)VR = 0 V; f = 1 MHz--1.5pF
Junction Temperature (Tj)---150°C
Ambient Temperature (Tamb)--65-150°C

Key Features

  • High-speed switching capability with a reverse recovery time of ≤4 ns.
  • Low leakage current and very small SMD plastic package (SOT666).
  • High reverse voltage of up to 100 V.
  • Low forward voltage drop.
  • Compact and flat lead design suitable for space-constrained applications.
  • Voltage clamping and general-purpose switching capabilities.
  • Reverse polarity protection.

Applications

The BAS16VV-7 is suitable for a variety of high-speed switching applications, including:

  • Voltage clamping and protection circuits.
  • General-purpose switching in electronic devices.
  • High-frequency signal processing and transmission.
  • Automotive and industrial control systems where high-speed switching is required.

Q & A

  1. What is the maximum forward current of the BAS16VV-7?
    The maximum forward current (IF) is 200 mA.
  2. What is the reverse recovery time of the BAS16VV-7?
    The reverse recovery time (trr) is ≤4 ns.
  3. What is the maximum reverse voltage of the BAS16VV-7?
    The maximum reverse voltage (VR) is 100 V.
  4. What package type is the BAS16VV-7 available in?
    The BAS16VV-7 is available in the SOT666 package.
  5. What are the typical applications of the BAS16VV-7?
    The BAS16VV-7 is used in voltage clamping, general-purpose switching, high-frequency signal processing, and automotive and industrial control systems.
  6. What is the junction temperature range of the BAS16VV-7?
    The junction temperature (Tj) range is up to 150 °C.
  7. Is the BAS16VV-7 RoHS compliant?
    Yes, the BAS16VV-7 is RoHS compliant.
  8. What is the forward voltage drop of the BAS16VV-7 at 10 mA?
    The forward voltage (VF) at 10 mA is up to 855 mV.
  9. What is the diode capacitance of the BAS16VV-7?
    The diode capacitance (Cd) is up to 1.5 pF at VR = 0 V and f = 1 MHz.
  10. What is the thermal resistance from junction to ambient of the BAS16VV-7?
    The thermal resistance from junction to ambient (Rth(j-a)) is up to 700 K/W.

Product Attributes

Diode Configuration:3 Independent
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:500 nA @ 80 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

$0.45
291

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS16VV-7 BAS16VVQ-7 BAS16V-7 BAS16VA-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Diode Configuration 3 Independent 3 Independent 2 Independent 3 Independent
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 100 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC) 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 500 nA @ 80 V 500 nA @ 80 V 1 µA @ 75 V 500 nA @ 80 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563 SOT-563

Related Product By Categories

BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAV23C-7-F
BAV23C-7-F
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
BAV23A,215
BAV23A,215
Nexperia USA Inc.
DIODE ARRAY GP 200V 225MA SOT23
BAS40-05-E3-18
BAS40-05-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STPS30L60CW
STPS30L60CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO247-3
BAV99S/MI115
BAV99S/MI115
NXP USA Inc.
RECTIFIER DIODE
NRVHP620MFDT1G
NRVHP620MFDT1G
onsemi
DIODE ULT FAST 3A 200V SO8FL
MBRD620CTT4
MBRD620CTT4
onsemi
DIODE ARRAY SCHOTTKY 20V 3A DPAK
BAT54AD REG
BAT54AD REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
BAV199HYT116
BAV199HYT116
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,

Related Product By Brand

BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
1N4148WSQ-7-F
1N4148WSQ-7-F
Diodes Incorporated
DIODE GEN PURP 75V 250MA SOD323
BZX84C6V2-7-F
BZX84C6V2-7-F
Diodes Incorporated
DIODE ZENER 6.2V 300MW SOT23-3
BZX84C24-7
BZX84C24-7
Diodes Incorporated
DIODE ZENER 24V 300MW SOT23-3
BZX84C39TA
BZX84C39TA
Diodes Incorporated
DIODE ZENER 39V 350MW SOT23-3
BC847CW-7-F
BC847CW-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT323
MMBTA63-7-F
MMBTA63-7-F
Diodes Incorporated
TRANS PNP DARL 30V 0.5A SOT23-3
BC846BLP4-7B
BC846BLP4-7B
Diodes Incorporated
TRANS NPN 65V 0.1A 3DFN
BCP5416QTA
BCP5416QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
BSS8402DW-7
BSS8402DW-7
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
74LVC1G07FW4-7
74LVC1G07FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN