1N5406G-T
  • Share:

Diodes Incorporated 1N5406G-T

Manufacturer No:
1N5406G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5406G-T is a general-purpose rectifier diode produced by Diodes Incorporated. This diode is part of the 1N5400G to 1N5408G series, known for its high current capability and low forward voltage drop. It is designed to meet various rectification needs in electronic circuits, offering a robust and reliable solution for applications requiring high surge overload ratings and low leakage current.

Key Specifications

ParameterSymbolValueUnit
Maximum Repetitive Peak Reverse VoltageVRRM600V
Maximum RMS VoltageVRMS420V
Maximum DC Blocking VoltageVDC600V
Average Rectified Output CurrentIO3.0A
Non-Repetitive Peak Forward Surge CurrentIFSM125A
Forward Voltage DropVFM1.1V
Peak Reverse CurrentIRM5.0 μA
Typical Reverse Recovery Timetrr2.0 μs
Typical Total CapacitanceCT40 pF
Thermal Resistance Junction to AmbientRθJA16 °C/W
Operating and Storage Temperature RangeTJ, TSTG-65 to +150 °C
PackageDO-201AD
Mounting TypeThrough Hole

Key Features

  • Glass Passivated Die Construction: Ensures high reliability and durability.
  • High Current Capability: Supports up to 3.0 A of average rectified output current.
  • Low Forward Voltage Drop: Typically 1.1 V at 3.0 A, reducing power losses.
  • Surge Overload Rating: Can handle up to 125 A peak forward surge current.
  • Lead-Free Finish: Compliant with RoHS and RoHS 2 directives.
  • UL Flammability Classification Rating 94V-0: Meets safety standards for flammability.
  • Matte Tin Plated Leads: Solderable per MIL-STD-202, Method 208.

Applications

The 1N5406G-T diode is suitable for a wide range of applications, including:

  • Power Supplies: For rectification in AC-DC converters.
  • Motor Control: In motor drive circuits requiring high current and low voltage drop.
  • Automotive Systems: For various automotive electrical systems due to its robust surge handling capabilities.
  • Industrial Control Systems: In circuits that require reliable and efficient rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5406G-T diode?
    The maximum repetitive peak reverse voltage is 600 V.
  2. What is the average rectified output current of the 1N5406G-T diode?
    The average rectified output current is 3.0 A.
  3. What is the forward voltage drop of the 1N5406G-T diode?
    The forward voltage drop is typically 1.1 V at 3.0 A.
  4. Is the 1N5406G-T diode RoHS compliant?
    Yes, the 1N5406G-T diode is RoHS and RoHS 2 compliant.
  5. What is the operating temperature range of the 1N5406G-T diode?
    The operating and storage temperature range is -65 to +150 °C.
  6. What is the package type of the 1N5406G-T diode?
    The package type is DO-201AD.
  7. What is the typical reverse recovery time of the 1N5406G-T diode?
    The typical reverse recovery time is 2.0 μs.
  8. Can the 1N5406G-T diode handle high surge currents?
    Yes, it can handle up to 125 A peak forward surge current.
  9. Is the 1N5406G-T diode suitable for automotive applications?
    Yes, it is suitable for various automotive electrical systems due to its robust surge handling capabilities.
  10. What is the thermal resistance junction to ambient of the 1N5406G-T diode?
    The thermal resistance junction to ambient is 16 °C/W.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:40pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.12
4,722

Please send RFQ , we will respond immediately.

Same Series
1N5408G-T
1N5408G-T
DIODE GEN PURP 1KV 3A DO201AD
1N5401G-T
1N5401G-T
DIODE GEN PURP 100V 3A AXIAL
1N5404G-T
1N5404G-T
DIODE GEN PURP 400V 3A DO201AD
1N5400G-T
1N5400G-T
DIODE GEN PURP 50V 3A DO201AD
1N5402G-T
1N5402G-T
DIODE GEN PURP 200V 3A DO201AD
1N5407G-T
1N5407G-T
DIODE GEN PURP 800V 3A DO201AD

Similar Products

Part Number 1N5406G-T 1N5408G-T 1N5407G-T 1N5401G-T 1N5402G-T 1N5404G-T 1N5406-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 1000 V 800 V 100 V 200 V 400 V 600 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 3 A 1.1 V @ 3 A 1.1 V @ 3 A 1.1 V @ 3 A 1.1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs 2 µs -
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 10 µA @ 600 V
Capacitance @ Vr, F 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 25pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAV102
BAV102
onsemi
DIODE GEN PURP 150V 200MA LL34
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MBRF40250TG
MBRF40250TG
onsemi
DIODE SCHOTTKY 250V 40A TO220FP
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
LL4148-13
LL4148-13
Diodes Incorporated
DIODE GP 75V 150MA MINI MELF
BZX84C6V8S-7
BZX84C6V8S-7
Diodes Incorporated
DIODE ZENER ARRAY 6.8V SOT363
BZX84B9V1Q-7-F
BZX84B9V1Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84B12Q-7-F
BZX84B12Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZT52HC2V7WF-7
BZT52HC2V7WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C4V7-7
BZX84C4V7-7
Diodes Incorporated
DIODE ZENER 4.7V 300MW SOT23-3
BCP5516TA
BCP5516TA
Diodes Incorporated
TRANS NPN 60V 1A SOT223-3
BCP5616TQTA
BCP5616TQTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
MMBT3904-7
MMBT3904-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
MMBT2222A-7-F-79
MMBT2222A-7-F-79
Diodes Incorporated
IC TRANSISTOR ARRAY SMD
74LVC1G08W5-7
74LVC1G08W5-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT25