BD649-S
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Bourns Inc. BD649-S

Manufacturer No:
BD649-S
Manufacturer:
Bourns Inc.
Package:
Tube
Description:
TRANS NPN DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD649-S is a discrete semiconductor product manufactured by Bourns Inc., although it is currently obsolete and no longer in production. This component was part of Bourns Inc.'s extensive range of electronic components, which include various types of transistors, sensors, and circuit protection devices. Bourns Inc., founded in 1947, is a renowned company known for its high-quality and innovative electronic components used across multiple industries such as automotive, industrial, and consumer electronics.

Key Specifications

Parameter Value
Manufacturer Part Number BD649-S
Manufacturer Bourns Inc.
Description TRANS NPN DARL 100V 8A TO220
Transistor Type NPN - Darlington
Package / Case TO-220-3
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
Current - Collector (Ic) (Max) 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole

Key Features

  • High Current Capability: The BD649-S can handle a maximum collector current of 8A, making it suitable for high-current applications.
  • High Voltage Rating: With a collector-emitter breakdown voltage of 100V, this transistor is robust against high voltage conditions.
  • Darlington Configuration: The Darlington transistor configuration provides high current gain, making it efficient for amplification and switching applications.
  • TO-220 Package: The TO-220 package is widely used and offers good heat dissipation, making it suitable for various power applications.
  • Broad Operating Temperature Range: The transistor operates over a wide temperature range from -65°C to 150°C, ensuring reliability in diverse environmental conditions.

Applications

The BD649-S, due to its high current and voltage ratings, is suitable for various applications including:

  • Power Amplifiers: Its high current gain and collector current make it ideal for power amplifier circuits.
  • Switching Circuits: The Darlington configuration and high current capability make it suitable for switching applications in power supplies and motor control.
  • Automotive Systems: The robustness against high voltage and temperature variations makes it a candidate for use in automotive systems.
  • Industrial Control Systems: It can be used in industrial control systems where high reliability and performance are required.

Q & A

  1. What is the BD649-S transistor?

    The BD649-S is an NPN Darlington transistor manufactured by Bourns Inc., designed for high-current and high-voltage applications.

  2. What is the maximum collector current of the BD649-S?

    The maximum collector current of the BD649-S is 8A.

  3. What is the collector-emitter breakdown voltage of the BD649-S?

    The collector-emitter breakdown voltage of the BD649-S is 100V.

  4. What package type does the BD649-S use?

    The BD649-S uses the TO-220-3 package.

  5. What is the operating temperature range of the BD649-S?

    The operating temperature range of the BD649-S is from -65°C to 150°C (TJ).

  6. Is the BD649-S still in production?

    No, the BD649-S is obsolete and no longer manufactured by Bourns Inc..

  7. What are some common applications of the BD649-S?

    Common applications include power amplifiers, switching circuits, automotive systems, and industrial control systems.

  8. What is the DC current gain (hFE) of the BD649-S?

    The DC current gain (hFE) of the BD649-S is 750 @ 3A, 3V.

  9. Why is the Darlington configuration useful in the BD649-S?

    The Darlington configuration provides high current gain, making the transistor efficient for amplification and switching applications.

  10. What type of mounting does the BD649-S use?

    The BD649-S uses through-hole mounting.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 50mA, 5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Same Series
BD645-S
BD645-S
TRANS NPN DARL 60V 8A TO220
BD651-S
BD651-S
TRANS NPN DARL 120V 8A TO220
BD647-S
BD647-S
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Similar Products

Part Number BD649-S BD645-S BD646-S BD647-S BD648-S
Manufacturer Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 60 V 60 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A 2.5V @ 50mA, 5A 2.5V @ 50mA, 5A 2.5V @ 50mA, 5A 2.5V @ 50mA, 5A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V
Power - Max 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220

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