Overview
The SSM2212RZ-RL, produced by Analog Devices Inc., is a dual, NPN-matched transistor pair specifically designed to meet the requirements of ultralow noise audio systems. This component is renowned for its extremely low input base spreading resistance and high current gain, making it ideal for achieving outstanding signal-to-noise ratios. The SSM2212RZ-RL is available in an 8-lead Standard Small Outline Package (SOIC) and is guaranteed to perform over an extended temperature range of −40°C to +85°C.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Current Gain (hFE) | hFE | 300 | 1800 | 2400 | |
| Input Base Spreading Resistance (rbb') | rbb' | 28 | Ω | ||
| Input Bias Current (IB) | IB | 200 nA | |||
| Input Offset Current (IOS) | IOS | 10 nA | |||
| Output Capacitance (COB) | COB | 23 pF | |||
| Collector-to-Collector Capacitance (CCC) | CCC | 35 pF | |||
| Collector-Emitter Breakdown Voltage (VCEO) | VCEO | 40 V | |||
| Maximum Collector Current (IC) | IC | 20 mA | |||
| Operating Temperature Range | −40°C | +85°C | |||
| Transition Frequency (fT) | fT | 200 MHz |
Key Features
- Extremely low input base spreading resistance (rbb' typically 28 Ω)
- High current gain (hFE typically exceeds 600 at IC = 1 mA)
- Excellent current gain match (ΔhFE approximately 0.5%)
- Low offset voltage (VOS less than 10 μV typical)
- Outstanding offset voltage drift (0.03 μV/°C)
- High gain bandwidth product (200 MHz)
- Protection diodes across the base-emitter junction to prevent degradation of beta and matching characteristics
- Ideal for symmetrically balanced designs and current biasing and mirroring circuits
- Available in 8-lead SOIC and 16-lead LFCSP packages
Applications
- Ultralow noise audio systems
- Symmetrically balanced amplifier designs to reduce high-order harmonic distortion
- Accurate and reliable current biasing and mirroring circuits
- Audio equipment requiring high signal-to-noise ratios
Q & A
- What is the primary application of the SSM2212RZ-RL?
The SSM2212RZ-RL is primarily designed for ultralow noise audio systems.
- What is the typical current gain (hFE) of the SSM2212RZ-RL at IC = 1 mA?
The typical current gain (hFE) is 1800 at IC = 1 mA.
- What is the maximum collector-emitter breakdown voltage (VCEO) of the SSM2212RZ-RL?
The maximum collector-emitter breakdown voltage (VCEO) is 40 V.
- What is the operating temperature range of the SSM2212RZ-RL?
The operating temperature range is −40°C to +85°C.
- What package types are available for the SSM2212RZ-RL?
The SSM2212RZ-RL is available in 8-lead SOIC and 16-lead LFCSP packages.
- What is the significance of the protection diodes across the base-emitter junction in the SSM2212RZ-RL?
The protection diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction.
- How does the SSM2212RZ-RL perform in terms of offset voltage drift?
The SSM2212RZ-RL has an outstanding offset voltage drift of 0.03 μV/°C.
- What is the gain bandwidth product of the SSM2212RZ-RL?
The gain bandwidth product is 200 MHz.
- Is the SSM2212RZ-RL suitable for current biasing and mirroring circuits?
Yes, the SSM2212RZ-RL is ideal for accurate and reliable current biasing and mirroring circuits.
- Does the SSM2212RZ-RL require offset trimming in most circuit applications?
No, the low VOS of the SSM2212RZ-RL does not need offset trimming in most circuit applications.
