W971GG6NB25I
  • Share:

Winbond Electronics W971GG6NB25I

Manufacturer No:
W971GG6NB25I
Manufacturer:
Winbond Electronics
Package:
Tray
Description:
IC DRAM 1GBIT PARALLEL 84WBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The W971GG6NB25I is a high-performance DDR2 Synchronous DRAM (SDRAM) module manufactured by Winbond Electronics. This component is designed to provide quick and efficient data access for various computing systems. With a capacity of 1GB and operating speeds of up to 800MHz, it is ideal for applications requiring high-speed memory storage.

Key Specifications

Parameter Value
Density 1 Gbit (64M x 16)
Package WBGA-84 (TFBGA-84)
Supply Voltage 1.7V ~ 1.9V (nominal 1.8V)
Frequency 667 / 800 / 1066 Mbps
Temperature Range -40°C ~ 95°C (Commercial and Industrial)
CAS Latency 3, 4, 5, 6, and 7
Burst Length 4 and 8
Memory Interface SSTL_18
Access Time 400 ps

Key Features

  • Double Data Rate architecture: two data transfers per clock cycle
  • Bi-directional, differential data strobes (DQS and /DQS)
  • Edge-aligned with Read data and center-aligned with Write data
  • DLL aligns DQ and DQS transitions with clock
  • Differential clock inputs (CLK and /CLK)
  • Data masks (DM) for write data
  • Posted /CAS programmable additive latency supported
  • Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
  • Auto-precharge operation for read and write bursts
  • Auto Refresh and Self Refresh modes
  • Precharged Power Down and Active Power Down
  • Write Data Mask
  • High-speed x16 technology

Applications

The W971GG6NB25I is suitable for various high-performance computing applications, including:

  • Server systems
  • Workstations
  • High-end desktop computers
  • Embedded systems requiring high-speed memory
  • Data storage and retrieval systems

Q & A

  1. Q: What is the capacity of the W971GG6NB25I?

    A: The W971GG6NB25I has a capacity of 1GB (64M x 16).

  2. Q: What are the operating speeds of the W971GG6NB25I?

    A: The W971GG6NB25I operates at speeds of 667 / 800 / 1066 Mbps.

  3. Q: What is the supply voltage range for the W971GG6NB25I?

    A: The supply voltage range is 1.7V ~ 1.9V, with a nominal voltage of 1.8V.

  4. Q: Is the W971GG6NB25I compatible with DDR3 memory interfaces?

    A: No, the W971GG6NB25I is specifically designed for DDR2 memory interfaces and is not compatible with DDR3 systems.

  5. Q: What are the temperature ranges for the W971GG6NB25I?

    A: The W971GG6NB25I operates within a temperature range of -40°C to 95°C for both commercial and industrial applications.

  6. Q: What are the CAS Latency options for the W971GG6NB25I?

    A: The CAS Latency options are 3, 4, 5, 6, and 7.

  7. Q: Does the W971GG6NB25I support auto-refresh and self-refresh modes?

    A: Yes, the W971GG6NB25I supports auto-refresh and self-refresh modes.

  8. Q: What is the package type of the W971GG6NB25I?

    A: The package type is WBGA-84 (TFBGA-84).

  9. Q: Is the W971GG6NB25I RoHS compliant?

    A: Yes, the W971GG6NB25I is RoHS compliant.

  10. Q: What is the access time of the W971GG6NB25I?

    A: The access time is 400 ps.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR2
Memory Size:1Gb (64M x 16)
Memory Interface:SSTL_18
Clock Frequency:800 MHz
Write Cycle Time - Word, Page:15ns
Access Time:400 ps
Voltage - Supply:1.7V ~ 1.9V
Operating Temperature:-40°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:84-TFBGA
Supplier Device Package:84-TFBGA (8x12.5)
0 Remaining View Similar

In Stock

$5.26
52

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number W971GG6NB25I W971GG8NB25I W971GG6SB25I W971GG6KB25I
Manufacturer Winbond Electronics Winbond Electronics Winbond Electronics Winbond Electronics
Product Status Active Active Obsolete Obsolete
Memory Type Volatile Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM DRAM
Technology SDRAM - DDR2 SDRAM - DDR2 SDRAM - DDR2 SDRAM - DDR2
Memory Size 1Gb (64M x 16) 1Gb (128M x 8) 1Gb (64M x 16) 1Gb (64M x 16)
Memory Interface SSTL_18 SSTL_18 Parallel Parallel
Clock Frequency 800 MHz 400 MHz 200 MHz 200 MHz
Write Cycle Time - Word, Page 15ns 15ns 15ns 15ns
Access Time 400 ps 400 ps 400 ps 400 ps
Voltage - Supply 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
Operating Temperature -40°C ~ 95°C (TC) -40°C ~ 95°C (TC) -40°C ~ 95°C (TC) -40°C ~ 95°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 84-TFBGA 60-VFBGA 84-TFBGA 84-TFBGA
Supplier Device Package 84-TFBGA (8x12.5) 60-VFBGA (8x9.5) 84-WBGA (8x12.5) 84-WBGA (8x12.5)

Related Product By Categories

W971GG6NB-25 TR
W971GG6NB-25 TR
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
CAT25256XI-T2
CAT25256XI-T2
onsemi
IC EEPROM 256KBIT SPI 8SOIC
M24M02-DRMN6TP
M24M02-DRMN6TP
STMicroelectronics
IC EEPROM 2MBIT I2C 1MHZ 8SO
PCF85103C-2T/00118
PCF85103C-2T/00118
NXP USA Inc.
256 X 8-BIT EEPROM WITH I2C
MX25L3233FM1I-08G
MX25L3233FM1I-08G
Macronix
IC FLASH 32MBIT SPI/QUAD 8SOP
MT25QU256ABA1EW7-0SIT TR
MT25QU256ABA1EW7-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
AT24C02N-10SI-1.8
AT24C02N-10SI-1.8
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C1001-10F1
M27C1001-10F1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32CDIP
M93C46-RDS6TG
M93C46-RDS6TG
STMicroelectronics
IC EEPROM 1KBIT SPI 1MHZ 8TSSOP
M29W640FT70N6F TR
M29W640FT70N6F TR
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M29W128GL7AN6E
M29W128GL7AN6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP

Related Product By Brand

W25Q80DVSNIG TR
W25Q80DVSNIG TR
Winbond Electronics
IC FLASH 8MBIT SPI 104MHZ 8SOIC
W25Q80DVUXIE TR
W25Q80DVUXIE TR
Winbond Electronics
IC FLASH 8MBIT SPI 104MHZ 8USON
W25Q16JVSNIQ TR
W25Q16JVSNIQ TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8SOIC
W25Q128JVSIM
W25Q128JVSIM
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8SOIC
W25Q128JVEIQ
W25Q128JVEIQ
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
W25Q128JWSIQ TR
W25Q128JWSIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8SOIC
W25Q256JVFIQ TR
W25Q256JVFIQ TR
Winbond Electronics
IC FLASH 256MBIT SPI/QUAD 16SOIC
W25N02KVZEIR TR
W25N02KVZEIR TR
Winbond Electronics
IC FLASH 2GBIT SPI 8WSON
W25Q128FVSIG
W25Q128FVSIG
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8SOIC
W25Q128FVSIG TR
W25Q128FVSIG TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8SOIC
W25Q256FVEIG TR
W25Q256FVEIG TR
Winbond Electronics
IC FLASH 256MBIT SPI/QUAD 8WSON
W25Q32FVSSIG TR
W25Q32FVSSIG TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 8SOIC