BYQ28ED-200PLJ
  • Share:

WeEn Semiconductors BYQ28ED-200PLJ

Manufacturer No:
BYQ28ED-200PLJ
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28ED-200PLJ is a dual, ultra-fast, epitaxial rectifier diode array produced by WeEn Semiconductors. This component is designed for use in high-frequency switched-mode power supplies, particularly as output rectifiers. It is packaged in the SOT428 surface mounting package, which is suitable for high-density board designs. The diode array is known for its low forward voltage drop, fast switching characteristics, and soft recovery behavior, making it an ideal choice for applications requiring high efficiency and reliability.

Key Specifications

ParameterConditionsMin.Typ.Max.Unit
VRRM (Peak Repetitive Reverse Voltage)---200V
VRWM (Working Peak Reverse Voltage)---200V
VR (Continuous Reverse Voltage)---200V
IO(AV) (Average Rectified Output Current)δ = 0.5; Tmb ≤ 119 ˚C--10A
IFRM (Repetitive Peak Forward Current)δ = 0.5; Tmb ≤ 119 ˚C--10A
IFSM (Non-Repetitive Peak Forward Current)t = 10 ms--50A
IRRM (Peak Repetitive Reverse Surge Current)tp = 2 µs; δ = 0.001--0.2A
IRSM (Peak Non-Repetitive Reverse Surge Current)tp = 100 µs--0.2A
Tj (Operating Junction Temperature)---150˚C
Tstg (Storage Temperature)--40-150˚C
VF (Forward Voltage)IF = 5 A; Tj = 25 ˚C-0.80.895V
trr (Reverse Recovery Time)IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs15-25ns

Key Features

  • Low Forward Voltage Drop: The BYQ28ED-200PLJ has a forward voltage drop of ≤ 0.895 V at IF = 5 A, ensuring low power losses.
  • Fast Switching: With a reverse recovery time (trr) of 15-25 ns, this diode array is suitable for high-frequency applications.
  • Soft Recovery Characteristic: This feature reduces electromagnetic interference (EMI) and stress on the circuit.
  • High Thermal Cycling Performance: The diode can handle high thermal cycling, enhancing its reliability in demanding environments.
  • Reverse Surge Capability: It can withstand peak repetitive reverse surge currents, making it robust against transient conditions.

Applications

The BYQ28ED-200PLJ is primarily used in high-frequency switched-mode power supplies, such as:

  • DC-DC converters
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Motor drives and control systems
  • High-frequency inverters and rectifiers

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the BYQ28ED-200PLJ?
    The peak repetitive reverse voltage (VRRM) is 200 V.
  2. What is the average rectified output current (IO(AV)) of the BYQ28ED-200PLJ?
    The average rectified output current (IO(AV)) is 10 A.
  3. What is the forward voltage drop (VF) at IF = 5 A?
    The forward voltage drop (VF) at IF = 5 A is ≤ 0.895 V.
  4. What is the reverse recovery time (trr) of the BYQ28ED-200PLJ?
    The reverse recovery time (trr) is between 15-25 ns.
  5. What are the typical applications of the BYQ28ED-200PLJ?
    The BYQ28ED-200PLJ is used in high-frequency switched-mode power supplies, DC-DC converters, PFC circuits, UPS, motor drives, and high-frequency inverters and rectifiers.
  6. What is the operating junction temperature (Tj) range of the BYQ28ED-200PLJ?
    The operating junction temperature (Tj) range is up to 150 ˚C.
  7. What is the storage temperature (Tstg) range of the BYQ28ED-200PLJ?
    The storage temperature (Tstg) range is from -40 ˚C to 150 ˚C.
  8. What is the peak non-repetitive forward current (IFSM) of the BYQ28ED-200PLJ?
    The peak non-repetitive forward current (IFSM) is 50 A for t = 10 ms.
  9. Does the BYQ28ED-200PLJ have soft recovery characteristics?
    Yes, the BYQ28ED-200PLJ has soft recovery characteristics, which reduce EMI and stress on the circuit.
  10. What package type is the BYQ28ED-200PLJ available in?
    The BYQ28ED-200PLJ is available in the SOT428 surface mounting package.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
514

Please send RFQ , we will respond immediately.

Related Product By Categories

1PS70SB84,115
1PS70SB84,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 15V SOT323
BAV99_R1_00001
BAV99_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAS4005E6433HTMA1
BAS4005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40AW-AU_R1_000A1
BAS40AW-AU_R1_000A1
Panjit International Inc.
SOT-323, SKY
SB05W05C-TB-E
SB05W05C-TB-E
onsemi
DIODE ARRAY SCHOTTKY 50V 3CP
MBRD640CTT4G
MBRD640CTT4G
onsemi
DIODE ARRAY SCHOTTKY 40V 3A DPAK
BAV199DW-TP
BAV199DW-TP
Micro Commercial Co
DIODE RECT 85V 160MA SOT363
BYQ28EB-200HE3_A/I
BYQ28EB-200HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
STPS20150CG
STPS20150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
BAV70M315
BAV70M315
Nexperia USA Inc.
NOW NEXPERIA BAV70M - RECTIFIER
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
BAV199DW-13-F
BAV199DW-13-F
Diodes Incorporated
DIODE ARRAY GP 85V 140MA SOT363

Related Product By Brand

BYV42EB-200,118
BYV42EB-200,118
WeEn Semiconductors
DIODE ARRAY GP 200V 30A D2PAK
NXPSC10650B6J
NXPSC10650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A D2PAK
BYT79-600,127
BYT79-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220AC
BYV79E-200,127
BYV79E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 14A TO220AC
BYC15X-600PQ
BYC15X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO220F
BYC20X-600PQ
BYC20X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 20A TO220F
BT131-600/DG,412
BT131-600/DG,412
WeEn Semiconductors
TRIAC SENS GATE 600V 1A TO92-3
Z0107NN0,135
Z0107NN0,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
BTA16-600BQ
BTA16-600BQ
WeEn Semiconductors
BTA16-600B/IITO220/STANDARD MARK
BT136S-800E,118
BT136S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 4A DPAK
BTA316-800CTQ
BTA316-800CTQ
WeEn Semiconductors
BTA316-800CTQ/SIL3P/STANDARD MAR
BTA316X-800CTQ
BTA316X-800CTQ
WeEn Semiconductors
BTA316X-800CTQ/TO-220F/STANDARD