BYQ28ED-200PLJ
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WeEn Semiconductors BYQ28ED-200PLJ

Manufacturer No:
BYQ28ED-200PLJ
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 10A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BYQ28ED-200PLJ is a dual, ultra-fast, epitaxial rectifier diode array produced by WeEn Semiconductors. This component is designed for use in high-frequency switched-mode power supplies, particularly as output rectifiers. It is packaged in the SOT428 surface mounting package, which is suitable for high-density board designs. The diode array is known for its low forward voltage drop, fast switching characteristics, and soft recovery behavior, making it an ideal choice for applications requiring high efficiency and reliability.

Key Specifications

ParameterConditionsMin.Typ.Max.Unit
VRRM (Peak Repetitive Reverse Voltage)---200V
VRWM (Working Peak Reverse Voltage)---200V
VR (Continuous Reverse Voltage)---200V
IO(AV) (Average Rectified Output Current)δ = 0.5; Tmb ≤ 119 ˚C--10A
IFRM (Repetitive Peak Forward Current)δ = 0.5; Tmb ≤ 119 ˚C--10A
IFSM (Non-Repetitive Peak Forward Current)t = 10 ms--50A
IRRM (Peak Repetitive Reverse Surge Current)tp = 2 µs; δ = 0.001--0.2A
IRSM (Peak Non-Repetitive Reverse Surge Current)tp = 100 µs--0.2A
Tj (Operating Junction Temperature)---150˚C
Tstg (Storage Temperature)--40-150˚C
VF (Forward Voltage)IF = 5 A; Tj = 25 ˚C-0.80.895V
trr (Reverse Recovery Time)IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs15-25ns

Key Features

  • Low Forward Voltage Drop: The BYQ28ED-200PLJ has a forward voltage drop of ≤ 0.895 V at IF = 5 A, ensuring low power losses.
  • Fast Switching: With a reverse recovery time (trr) of 15-25 ns, this diode array is suitable for high-frequency applications.
  • Soft Recovery Characteristic: This feature reduces electromagnetic interference (EMI) and stress on the circuit.
  • High Thermal Cycling Performance: The diode can handle high thermal cycling, enhancing its reliability in demanding environments.
  • Reverse Surge Capability: It can withstand peak repetitive reverse surge currents, making it robust against transient conditions.

Applications

The BYQ28ED-200PLJ is primarily used in high-frequency switched-mode power supplies, such as:

  • DC-DC converters
  • Power factor correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Motor drives and control systems
  • High-frequency inverters and rectifiers

Q & A

  1. What is the peak repetitive reverse voltage (VRRM) of the BYQ28ED-200PLJ?
    The peak repetitive reverse voltage (VRRM) is 200 V.
  2. What is the average rectified output current (IO(AV)) of the BYQ28ED-200PLJ?
    The average rectified output current (IO(AV)) is 10 A.
  3. What is the forward voltage drop (VF) at IF = 5 A?
    The forward voltage drop (VF) at IF = 5 A is ≤ 0.895 V.
  4. What is the reverse recovery time (trr) of the BYQ28ED-200PLJ?
    The reverse recovery time (trr) is between 15-25 ns.
  5. What are the typical applications of the BYQ28ED-200PLJ?
    The BYQ28ED-200PLJ is used in high-frequency switched-mode power supplies, DC-DC converters, PFC circuits, UPS, motor drives, and high-frequency inverters and rectifiers.
  6. What is the operating junction temperature (Tj) range of the BYQ28ED-200PLJ?
    The operating junction temperature (Tj) range is up to 150 ˚C.
  7. What is the storage temperature (Tstg) range of the BYQ28ED-200PLJ?
    The storage temperature (Tstg) range is from -40 ˚C to 150 ˚C.
  8. What is the peak non-repetitive forward current (IFSM) of the BYQ28ED-200PLJ?
    The peak non-repetitive forward current (IFSM) is 50 A for t = 10 ms.
  9. Does the BYQ28ED-200PLJ have soft recovery characteristics?
    Yes, the BYQ28ED-200PLJ has soft recovery characteristics, which reduce EMI and stress on the circuit.
  10. What package type is the BYQ28ED-200PLJ available in?
    The BYQ28ED-200PLJ is available in the SOT428 surface mounting package.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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