BT169G,112
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WeEn Semiconductors BT169G,112

Manufacturer No:
BT169G,112
Manufacturer:
WeEn Semiconductors
Package:
Bulk
Description:
SCR 600V 800MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BT169G,112 is a Silicon Controlled Rectifier (SCR) produced by WeEn Semiconductors. This component is designed for applications requiring high bidirectional blocking voltage capability, high surge current capability, and high thermal cycling performance. The BT169G,112 is available in a SOT78 plastic package and is suitable for various industrial and electronic applications where reliable and efficient control of electrical current is necessary.

Key Specifications

Parameter Value Unit
VDRM (Repetitive Peak Off-State Voltage) 600 V
IT(AV) (Average On-State Current) 0.5 A
ITM (Non-Repetitive Peak On-State Current) 8 A (half sine wave, tp = 10 ms)
IGT (Gate Trigger Current) 50 - 200 μA
Tj (Junction Temperature) -40 to 125 °C
Tstg (Storage Temperature) -40 to 150 °C
dVD/dt (Rate of Rise of Off-State Voltage) 500 - 800 V/μs
Package Type SOT78

Key Features

  • Planar passivated silicon controlled rectifier (SCR) for high reliability and performance.
  • High bidirectional blocking voltage capability up to 600V.
  • High surge current capability, suitable for applications with transient currents.
  • High thermal cycling performance, ensuring durability in varying temperature conditions.
  • Low gate trigger current (IGT) of 50 - 200 μA, facilitating easy control.
  • Compact SOT78 plastic package, ideal for space-constrained designs.

Applications

  • Power control and switching in industrial automation systems.
  • Lighting control systems, including dimming and phase control.
  • Motor control and protection circuits.
  • Heating and cooling control systems.
  • General purpose AC power control applications.

Q & A

  1. What is the maximum repetitive peak off-state voltage (VDRM) of the BT169G,112?

    The maximum repetitive peak off-state voltage (VDRM) is 600V.

  2. What is the average on-state current (IT(AV)) of the BT169G,112?

    The average on-state current (IT(AV)) is 0.5A.

  3. What is the non-repetitive peak on-state current (ITM) of the BT169G,112?

    The non-repetitive peak on-state current (ITM) is up to 8A for a half sine wave with a pulse duration of 10 ms.

  4. What is the gate trigger current (IGT) of the BT169G,112?

    The gate trigger current (IGT) ranges from 50 to 200 μA.

  5. What is the junction temperature range for the BT169G,112?

    The junction temperature range is -40 to 125°C.

  6. What type of package does the BT169G,112 come in?

    The BT169G,112 comes in a SOT78 plastic package.

  7. What are some common applications for the BT169G,112?

    Common applications include power control and switching in industrial automation, lighting control systems, motor control, heating and cooling control systems, and general purpose AC power control.

  8. What is the rate of rise of off-state voltage (dVD/dt) for the BT169G,112?

    The rate of rise of off-state voltage (dVD/dt) is between 500 to 800 V/μs.

  9. How does the BT169G,112 handle thermal cycling?

    The BT169G,112 is designed for high thermal cycling performance, ensuring durability in varying temperature conditions.

  10. What is the storage temperature range for the BT169G,112?

    The storage temperature range is -40 to 150°C.

Product Attributes

Voltage - Off State:600 V
Voltage - Gate Trigger (Vgt) (Max):800 mV
Current - Gate Trigger (Igt) (Max):200 µA
Voltage - On State (Vtm) (Max):1.7 V
Current - On State (It (AV)) (Max):500 mA
Current - On State (It (RMS)) (Max):800 mA
Current - Hold (Ih) (Max):5 mA
Current - Off State (Max):100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm):8A, 9A
SCR Type:Sensitive Gate
Operating Temperature:125°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92-3
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Same Series
1045216001
1045216001
CONN 26-32AWG CRIMP TIN

Similar Products

Part Number BT169G,112 BT169H,112 BT168G,112 BT169D,112
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors
Product Status Active Obsolete Active Active
Voltage - Off State 600 V 800 V 600 V 400 V
Voltage - Gate Trigger (Vgt) (Max) 800 mV 800 mV 800 mV 800 mV
Current - Gate Trigger (Igt) (Max) 200 µA 100 µA 200 µA 200 µA
Voltage - On State (Vtm) (Max) 1.7 V 1.7 V 1.7 V 1.7 V
Current - On State (It (AV)) (Max) 500 mA 500 mA 500 mA 500 mA
Current - On State (It (RMS)) (Max) 800 mA 800 mA 800 mA 800 mA
Current - Hold (Ih) (Max) 5 mA 3 mA 5 mA 5 mA
Current - Off State (Max) 100 µA 100 µA 100 µA 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm) 8A, 9A 9A, 10A 8A, 9A 8A, 9A
SCR Type Sensitive Gate Sensitive Gate Sensitive Gate Sensitive Gate
Operating Temperature 125°C (TJ) - 125°C (TJ) 125°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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