Overview
The SM6T6V8AHE3_A/I is a transient voltage suppressor (TVS) diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the SM6T series, designed to protect sensitive electronic equipment against electrostatic discharges and voltage transients. The SM6T series is known for its high reliability and stability, making it suitable for a wide range of applications including consumer electronics, computers, industrial equipment, automotive systems, and telecommunications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Pulse Power Dissipation (PPP) | 600 | W (10/1000 µs) |
| Reverse Stand-Off Voltage (VWM) | 5.8 | V |
| Breakdown Voltage (VBR) | 6.8 | V |
| Clamping Voltage (VCL) at IPPM | 13.4 | V (10/1000 µs) |
| Leakage Current (IRM) | 0.2 | µA at 25 °C |
| Maximum Junction Temperature (TJ max) | 150 | °C |
| Package Type | SMB (DO-214AA) | |
| Polarity | Unidirectional | |
| Compliance | RoHS-compliant, AEC-Q101 qualified |
Key Features
- Low Profile Package: Ideal for automated placement and space-saving designs.
- High Power Capability: 600 W peak pulse power dissipation with a 10/1000 µs waveform.
- Excellent Clamping Capability: Effective in protecting against voltage transients and surges.
- Low Inductance: Suitable for high-frequency applications.
- Glass Passivated Chip Junction: Ensures reliability and stability over time.
- RoHS and AEC-Q101 Compliance: Meets environmental and automotive quality standards.
- High Junction Temperature: Operates up to 150 °C, making it suitable for demanding environments.
Applications
The SM6T6V8AHE3_A/I TVS diode is used in various applications to protect sensitive electronics against voltage transients and electrostatic discharges. These include:
- Consumer Electronics: Protection of ICs, MOSFETs, and signal lines in consumer devices.
- Automotive Systems: Protection against load dump and other transient voltages in automotive electronics.
- Industrial Equipment: Protection of sensitive electronics in industrial control systems and power supplies.
- Telecommunications: Protection of signal lines and ICs in telecommunications equipment.
- Computing: Protection of motherboards, power supplies, and other computing components.
Q & A
- What is the peak pulse power dissipation of the SM6T6V8AHE3_A/I?
The peak pulse power dissipation is 600 W with a 10/1000 µs waveform.
- What is the reverse stand-off voltage (VWM) of this TVS diode?
The reverse stand-off voltage (VWM) is 5.8 V.
- What is the breakdown voltage (VBR) of the SM6T6V8AHE3_A/I?
The breakdown voltage (VBR) is 6.8 V.
- What is the maximum junction temperature (TJ max) for this component?
The maximum junction temperature (TJ max) is 150 °C.
- Is the SM6T6V8AHE3_A/I RoHS-compliant and AEC-Q101 qualified?
- What package type is used for the SM6T6V8AHE3_A/I?
The package type is SMB (DO-214AA).
- What is the polarity of the SM6T6V8AHE3_A/I TVS diode?
The polarity is unidirectional.
- What are some common applications for the SM6T6V8AHE3_A/I?
Common applications include consumer electronics, automotive systems, industrial equipment, telecommunications, and computing.
- Does the SM6T6V8AHE3_A/I meet any specific industry standards?
- What is the leakage current of the SM6T6V8AHE3_A/I at 25 °C?
The leakage current is 0.2 µA at 25 °C.
