Overview
The SM6T68AHE3_A/I is a surface-mount TransZorb® Transient Voltage Suppressor (TVS) diode produced by Vishay General Semiconductor - Diodes Division. This component is designed to protect sensitive electronic equipment from voltage transients and electrostatic discharges. It is part of the SM6T series, which is known for its high reliability and performance in various applications.
Key Specifications
| Parameter | Value |
|---|---|
| Peak Pulse Power (10/1000 μs) | 600 W |
| Peak Pulse Power (8/20 μs) | 4 kW |
| Stand-off Voltage (VWM) | 92 V |
| Breakdown Voltage (VBR) | 104 V (unidirectional), 104 V (bidirectional) |
| Maximum Junction Temperature (TJ max) | 150 °C |
| Leakage Current at 25 °C | 0.2 μA |
| Leakage Current at 85 °C | 1 μA |
| Package Type | SMB (DO-214AA) |
| Lead Finishing | Matte tin plated leads |
| Compliance | RoHS-compliant, AEC-Q101 qualified |
Key Features
- Low Profile Package: Ideal for automated placement and space-saving designs.
- High Power Capability: 600 W peak pulse power with a 10/1000 μs waveform.
- Excellent Clamping Capability: Effective in protecting against voltage transients.
- Low Inductance: Enhances performance in high-frequency applications.
- Glass Passivated Chip Junction: Ensures reliability and stability.
- Available in Unidirectional and Bidirectional Configurations: Versatile for various application needs.
- Compliance with Industry Standards: Meets MSL level 1, per J-STD-020, and is AEC-Q101 qualified.
Applications
The SM6T68AHE3_A/I is used in a variety of applications to protect sensitive electronics against voltage transients and electrostatic discharges. These include:
- Consumer electronics
- Computer systems
- Industrial equipment
- Automotive systems (e.g., protection from load dump)
- Telecommunication devices
- Protection of ICs, MOSFETs, and signal lines in sensor units
Q & A
- What is the peak pulse power capability of the SM6T68AHE3_A/I?
The peak pulse power capability is 600 W with a 10/1000 μs waveform and 4 kW with an 8/20 μs waveform.
- What is the stand-off voltage (VWM) of this TVS diode?
The stand-off voltage (VWM) is 92 V.
- What is the maximum junction temperature (TJ max) for this component?
The maximum junction temperature (TJ max) is 150 °C.
- Is the SM6T68AHE3_A/I RoHS-compliant and AEC-Q101 qualified?
- What type of package does the SM6T68AHE3_A/I come in?
The component comes in an SMB (DO-214AA) package.
- What are the typical applications of the SM6T68AHE3_A/I?
Typical applications include protection of sensitive electronics in consumer electronics, computer systems, industrial equipment, automotive systems, and telecommunication devices.
- Does the SM6T68AHE3_A/I have low inductance?
- Is the SM6T68AHE3_A/I available in both unidirectional and bidirectional configurations?
- What is the leakage current at 25 °C and 85 °C for this TVS diode?
The leakage current is 0.2 μA at 25 °C and 1 μA at 85 °C.
- Does the SM6T68AHE3_A/I meet industry standards such as IEC 61000-4-2 and MIL STD 883?
