Overview
The SM15T100AHE3_A/I is a Transient Voltage Suppressor (TVS) diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the SM15T series, which is designed to protect sensitive electronics from voltage transients induced by inductive load switching and lightning. The SM15T100AHE3_A/I is particularly suited for applications requiring high peak pulse power capability and excellent clamping characteristics.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Peak Pulse Power Dissipation (10/1000 μs waveform) | 1500 | W |
Reverse Working Voltage (VWM) | 85.5 | V |
Breakdown Voltage (VBR) | 95 - 105 | V |
Clamp Voltage (VC) at IPPM (10/1000 μs) | 137 | V |
Peak Pulse Current (IPPM) | 11 | A |
Operating Junction and Storage Temperature Range | -65 to +150 | °C |
Package | DO-214AB, SMC | |
Maximum Operating Temperature | +150 | °C |
Key Features
- Low profile package ideal for automated placement
- Glass passivated chip junction for high reliability
- Available in unidirectional and bidirectional configurations
- Excellent clamping capability to protect against voltage transients
- Low inductance for better performance in high-frequency applications
- AEC-Q101 qualified for automotive applications
- Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
Applications
The SM15T100AHE3_A/I is used in various applications to protect sensitive electronics against voltage transients. These include:
- Protection of ICs, MOSFETs, and signal lines in consumer electronics
- Industrial applications involving inductive load switching and motor control
- Automotive systems requiring protection against transient voltages
- Telecommunication equipment to safeguard against voltage surges
- Computer and computing systems to ensure reliable operation
Q & A
- What is the peak pulse power dissipation of the SM15T100AHE3_A/I?
The peak pulse power dissipation is 1500 W with a 10/1000 μs waveform.
- What is the reverse working voltage (VWM) of this TVS diode?
The reverse working voltage (VWM) is 85.5 V.
- What are the breakdown voltage (VBR) ranges for this component?
The breakdown voltage (VBR) ranges from 95 V to 105 V.
- What is the clamp voltage (VC) at IPPM (10/1000 μs)?
The clamp voltage (VC) at IPPM (10/1000 μs) is 137 V.
- What is the peak pulse current (IPPM) of the SM15T100AHE3_A/I?
The peak pulse current (IPPM) is 11 A.
- What is the operating junction and storage temperature range for this TVS diode?
The operating junction and storage temperature range is -65 °C to +150 °C.
- What package type is used for the SM15T100AHE3_A/I?
The package type is DO-214AB, SMC.
- Is the SM15T100AHE3_A/I AEC-Q101 qualified?
Yes, the SM15T100AHE3_A/I is AEC-Q101 qualified for automotive applications.
- What are some typical applications of the SM15T100AHE3_A/I?
Typical applications include protection of ICs, MOSFETs, and signal lines in consumer electronics, industrial applications, automotive systems, telecommunication equipment, and computer systems.
- What is the maximum operating temperature for this component?
The maximum operating temperature is +150 °C.