MURS260HE3/5BT
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Vishay General Semiconductor - Diodes Division MURS260HE3/5BT

Manufacturer No:
MURS260HE3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260HE3/5BT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is part of the MURS260 series, known for its high performance and reliability in various electronic applications. The MURS260HE3/5BT is designed with a glass passivated pallet chip junction and features ultrafast reverse recovery times, making it ideal for high-speed switching and rectification tasks.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 35 A
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A) ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package SMB (DO-214AA)
Terminals Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Key Features

  • Glass Passivated Pallet Chip Junction: Ensures high reliability and performance.
  • Ultrafast Reverse Recovery Time: 50 ns, ideal for high-speed switching applications.
  • Ideal for Automated Placement: Suitable for automated surface-mount assembly processes.
  • RoHS-Compliant and AEC-Q101 Qualified: Meets environmental and automotive quality standards.
  • High Maximum Repetitive Peak Reverse Voltage: Up to 600 V, providing robust protection against reverse voltage.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.45 V at IF = 2.0 A.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Electronics: Used in power supplies, motor control, and other high-reliability industrial applications.
  • Consumer and Telecommunication Devices: Ideal for rectification and switching tasks in consumer electronics and telecommunication equipment.
  • Computing Systems: Can be used in power management and rectification circuits within computing devices.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260HE3/5BT?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current at TL = 125 °C?

    The maximum average forward rectified current is 2.0 A.

  3. What is the peak forward surge current rating?

    The peak forward surge current is 35 A for an 8.3 ms single half sine-wave.

  4. What is the typical reverse recovery time of the MURS260HE3/5BT?

    The typical reverse recovery time is 50 ns.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  6. Is the MURS260HE3/5BT RoHS-compliant and AEC-Q101 qualified?

    Yes, it is both RoHS-compliant and AEC-Q101 qualified.

  7. What type of package does the MURS260HE3/5BT use?

    The package type is SMB (DO-214AA).

  8. What are the terminal materials and plating?

    The terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102.

  9. What are some common applications for the MURS260HE3/5BT?

    Common applications include automotive systems, industrial electronics, consumer and telecommunication devices, and computing systems.

  10. How does the MURS260HE3/5BT handle high-speed switching?

    The component features ultrafast reverse recovery times, making it ideal for high-speed switching applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
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Same Series
MURS240-E3/52T
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MURS240-E3/5BT
MURS240-E3/5BT
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MURS240HE3/5BT
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DIODE GEN PURP 400V 2A DO214AA
MURS260HE3/5BT
MURS260HE3/5BT
DIODE GEN PURP 600V 2A DO214AA
MURS240HE3/52T
MURS240HE3/52T
DIODE GEN PURP 400V 2A DO214AA

Similar Products

Part Number MURS260HE3/5BT MURS160HE3/5BT MURS240HE3/5BT MURS260-E3/5BT MURS260HE3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 400 V 600 V 600 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.25 V @ 1 A 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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