MURS260HE3/5BT
  • Share:

Vishay General Semiconductor - Diodes Division MURS260HE3/5BT

Manufacturer No:
MURS260HE3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260HE3/5BT is a surface-mount ultrafast plastic rectifier produced by Vishay General Semiconductor - Diodes Division. This component is part of the MURS260 series, known for its high performance and reliability in various electronic applications. The MURS260HE3/5BT is designed with a glass passivated pallet chip junction and features ultrafast reverse recovery times, making it ideal for high-speed switching and rectification tasks.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 35 A
Maximum Instantaneous Forward Voltage at IF = 2.0 A, TJ = 25 °C VF 1.45 V
Maximum Reverse Recovery Time trr 50 ns (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A) ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package SMB (DO-214AA)
Terminals Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Key Features

  • Glass Passivated Pallet Chip Junction: Ensures high reliability and performance.
  • Ultrafast Reverse Recovery Time: 50 ns, ideal for high-speed switching applications.
  • Ideal for Automated Placement: Suitable for automated surface-mount assembly processes.
  • RoHS-Compliant and AEC-Q101 Qualified: Meets environmental and automotive quality standards.
  • High Maximum Repetitive Peak Reverse Voltage: Up to 600 V, providing robust protection against reverse voltage.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.45 V at IF = 2.0 A.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Electronics: Used in power supplies, motor control, and other high-reliability industrial applications.
  • Consumer and Telecommunication Devices: Ideal for rectification and switching tasks in consumer electronics and telecommunication equipment.
  • Computing Systems: Can be used in power management and rectification circuits within computing devices.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260HE3/5BT?

    The maximum repetitive peak reverse voltage is 600 V.

  2. What is the maximum average forward rectified current at TL = 125 °C?

    The maximum average forward rectified current is 2.0 A.

  3. What is the peak forward surge current rating?

    The peak forward surge current is 35 A for an 8.3 ms single half sine-wave.

  4. What is the typical reverse recovery time of the MURS260HE3/5BT?

    The typical reverse recovery time is 50 ns.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  6. Is the MURS260HE3/5BT RoHS-compliant and AEC-Q101 qualified?

    Yes, it is both RoHS-compliant and AEC-Q101 qualified.

  7. What type of package does the MURS260HE3/5BT use?

    The package type is SMB (DO-214AA).

  8. What are the terminal materials and plating?

    The terminals are matte tin plated and solderable per J-STD-002 and JESD 22-B102.

  9. What are some common applications for the MURS260HE3/5BT?

    Common applications include automotive systems, industrial electronics, consumer and telecommunication devices, and computing systems.

  10. How does the MURS260HE3/5BT handle high-speed switching?

    The component features ultrafast reverse recovery times, making it ideal for high-speed switching applications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
349

Please send RFQ , we will respond immediately.

Same Series
MURS240-E3/52T
MURS240-E3/52T
DIODE GEN PURP 400V 2A DO214AA
MURS260-E3/5BT
MURS260-E3/5BT
DIODE GEN PURP 600V 2A DO214AA
MURS240-E3/5BT
MURS240-E3/5BT
DIODE GEN PURP 400V 2A DO214AA
MURS240HE3/5BT
MURS240HE3/5BT
DIODE GEN PURP 400V 2A DO214AA
MURS260HE3/5BT
MURS260HE3/5BT
DIODE GEN PURP 600V 2A DO214AA
MURS240HE3/52T
MURS240HE3/52T
DIODE GEN PURP 400V 2A DO214AA

Similar Products

Part Number MURS260HE3/5BT MURS160HE3/5BT MURS240HE3/5BT MURS260-E3/5BT MURS260HE3/52T
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 400 V 600 V 600 V
Current - Average Rectified (Io) 2A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 2 A 1.25 V @ 1 A 1.45 V @ 2 A 1.45 V @ 2 A 1.45 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB) DO-214AA (SMB)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T68A-M3/52
SM6T68A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T220AHE3_A/H
SM6T220AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T33AHE3/57T
SM15T33AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AB
BAS40-00-E3-18
BAS40-00-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 200MA SOT23
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX55C3V3-TR
BZX55C3V3-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 500MW DO35
1N4740A-TR
1N4740A-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 1.3W DO41
ZM4734A-GS18
ZM4734A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 1W DO213AB
BZX384B24-G3-18
BZX384B24-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 200MW SOD323
BZX84C3V9-HE3-18
BZX84C3V9-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.9V 300MW SOT23-3
BZX84C39-HE3-08
BZX84C39-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 300MW SOT23-3
BZX84B4V7-G3-08
BZX84B4V7-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3