BAV70-G3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAV70-G3-18

Manufacturer No:
BAV70-G3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 70V 250MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV70-G3-18 is a small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This dual diode is configured with a common cathode and is housed in a surface mount TO-236-3, SC-59, or SOT-23-3 package. It is designed for fast switching applications and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

Parameter Test Condition Symbol Value Unit
Peak Reverse Voltage Tamb = 25 °C VRRM 70 V
Reverse Voltage Tamb = 25 °C VR 70 V
Forward Current (continuous) Tamb = 25 °C IF 350 mA
Non-repetitive Peak Forward Current tp = 1 μs IFSM 2 A
Non-repetitive Peak Forward Current tp = 1 ms IFSM 1 A
Non-repetitive Peak Forward Current tp = 1 s IFSM 0.5 A
Power Dissipation on FR-4 Board Tamb = 25 °C Ptot 270 mW
Thermal Resistance Junction to Ambient Air Tamb = 25 °C RthJA 460 K/W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -65 to +150 °C
Operating Temperature Range Top -55 to +150 °C
Forward Voltage IF = 1 mA VF 0.715 V
Reverse Recovery Time IF = 10 mA to iR = 1 mA, VR = 6 V, RL = 100 Ω trr 6 ns

Key Features

  • Fast Switching: The BAV70-G3-18 is designed for fast switching applications, making it suitable for high-speed circuits.
  • Dual Diode Configuration: It features a common cathode configuration, which is useful in various circuit designs.
  • Surface Mount Package: Available in TO-236-3, SC-59, or SOT-23-3 packages, making it easy to integrate into surface mount PCBs.
  • AEC-Q101 Qualified: This diode is qualified to the AEC-Q101 standard, ensuring its reliability and performance in automotive and other harsh environments.
  • Low Forward Voltage Drop: The diode has a low forward voltage drop, which helps in minimizing power losses in the circuit.
  • High Peak Reverse Voltage: It can handle a peak reverse voltage of 70 V, providing robust protection against reverse voltage spikes.

Applications

  • Automotive Electronics: Due to its AEC-Q101 qualification, it is widely used in automotive systems, including power management and signal processing circuits.
  • Consumer Electronics: Suitable for use in various consumer electronic devices such as audio equipment, power supplies, and switching circuits.
  • Industrial Control Systems: Used in industrial control systems for signal switching and protection against voltage spikes.
  • Telecommunications: Applied in telecommunications equipment for signal processing and protection.

Q & A

  1. What is the peak reverse voltage of the BAV70-G3-18 diode?

    The peak reverse voltage (VRRM) of the BAV70-G3-18 diode is 70 V.

  2. What is the continuous forward current rating of the BAV70-G3-18?

    The continuous forward current (IF) rating is 350 mA.

  3. What is the package type of the BAV70-G3-18 diode?

    The BAV70-G3-18 diode is available in TO-236-3, SC-59, or SOT-23-3 surface mount packages.

  4. Is the BAV70-G3-18 diode AEC-Q101 qualified?

    Yes, the BAV70-G3-18 diode is AEC-Q101 qualified, making it suitable for automotive and other harsh environments.

  5. What is the junction temperature range of the BAV70-G3-18 diode?

    The junction temperature (Tj) range is from -55 °C to +150 °C.

  6. What is the reverse recovery time of the BAV70-G3-18 diode?

    The reverse recovery time (trr) is 6 ns.

  7. What is the thermal resistance junction to ambient air for the BAV70-G3-18 diode?

    The thermal resistance junction to ambient air (RthJA) is 460 K/W.

  8. What are some common applications of the BAV70-G3-18 diode?

    Common applications include automotive electronics, consumer electronics, industrial control systems, and telecommunications equipment.

  9. What is the storage temperature range for the BAV70-G3-18 diode?

    The storage temperature range (Tstg) is from -65 °C to +150 °C.

  10. What is the forward voltage drop of the BAV70-G3-18 diode at 1 mA forward current?

    The forward voltage drop (VF) at 1 mA forward current is 0.715 V.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io) (per Diode):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:2.5 µA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.03
8,271

Please send RFQ , we will respond immediately.

Same Series
BAV70-G3-08
BAV70-G3-08
DIODE ARRAY GP 70V 250MA SOT23

Similar Products

Part Number BAV70-G3-18 BAV70-E3-18 BAV70-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 70 V 70 V 70 V
Current - Average Rectified (Io) (per Diode) 250mA (DC) 125mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1 V @ 50 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 2.5 µA @ 70 V 2.5 µA @ 70 V 2.5 µA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max) -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

Related Product By Categories

BAS70-06,215
BAS70-06,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 70V SOT23
BAV99STB6_R1_00001
BAV99STB6_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAV70W
BAV70W
Diotec Semiconductor
DIODE SOT-323 75V 0.17A 4NS
BAS21AW,115
BAS21AW,115
Nexperia USA Inc.
DIODE ARRAY GP 250V 225MA SOT323
STPS20150CG
STPS20150CG
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
BAV99W/DG/B3135
BAV99W/DG/B3135
NXP USA Inc.
NEXPERIA BAV99 - DUAL HIGH-SPEE
BAV70M315
BAV70M315
Nexperia USA Inc.
NOW NEXPERIA BAV70M - RECTIFIER
BAT54C-F2-0000HF
BAT54C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 30V 0.2A SOT-23-3
BAW56TA
BAW56TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
MURB1620CT-T-F
MURB1620CT-T-F
Diodes Incorporated
DIODE ARRAY GP 200V 16A D2PAK
BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323

Related Product By Brand

SMA6J5.0A-E3/61
SMA6J5.0A-E3/61
Vishay General Semiconductor - Diodes Division
TVS DIODE 5VWM 13.4VC DO214AC
SM6T33A-M3/5B
SM6T33A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T15CAHM3_A/I
SM6T15CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T220AHE3/9AT
SM15T220AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
SM6T33AHE3/52
SM6T33AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
BAV99-HE3-08
BAV99-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 150MA SOT23
BAT54A-HE3-18
BAT54A-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAV70-E3-18
BAV70-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 125MA SOT23
BAT43W-G3-18
BAT43W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4007GPEHE3/91
1N4007GPEHE3/91
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
BZX384C11-G3-18
BZX384C11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323
BZX384B16-G3-18
BZX384B16-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323