BAV23C-HE3-08
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Vishay General Semiconductor - Diodes Division BAV23C-HE3-08

Manufacturer No:
BAV23C-HE3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 200V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV23C-HE3-08 is a dual small signal switching diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring fast switching and reliability. The diode features a common cathode configuration and is packaged in a SOT-23 surface-mount package, making it ideal for automatic insertion in various electronic systems.

The BAV23C-HE3-08 is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments. It is also RoHS-compliant, aligning with environmental regulations.

Key Specifications

Parameter Test Condition Symbol Value Unit
Continuous Reverse Voltage Tamb = 25 °C VR 200 V
Repetitive Peak Reverse Voltage Tamb = 25 °C VRRM 250 V
Non-Repetitive Peak Forward Current t = 1 μs IFSM 9 A
Maximum Average Forward Rectified Current f ≥ 50 Hz IF(AV) 200 mA
Forward Continuous Current Tamb = 25 °C IF 400 mA
Repetitive Peak Forward Current Tamb = 25 °C IFRM 625 mA
Power Dissipation (on FR-4 board) Tamb = 25 °C Ptot 300 mW
Thermal Resistance Junction to Ambient Air Tamb = 25 °C RthJA 420 K/W
Junction Temperature Tamb = 25 °C Tj 150 °C
Storage Temperature Range Tstg -65 to +150 °C
Operating Temperature Range Top -55 to +150 °C

Key Features

  • Silicon epitaxial planar diode with fast switching capabilities.
  • Dual diode with common cathode configuration.
  • AEC-Q101 qualified for automotive and other high-reliability applications.
  • RoHS-compliant, ensuring environmental compliance.
  • Surface-mount SOT-23 package suitable for automatic insertion.
  • Low forward voltage drop (VF = 1 V at IF = 100 mA, VF = 1.25 V at IF = 200 mA).
  • Low reverse current (IR = 100 nA at VR = 200 V).
  • Fast reverse recovery time (trr = 50 ns).

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial electronics: Used in rectification, polarity protection, and signal switching applications.
  • Consumer electronics: Ideal for high-speed interface solutions and EMI filtering.
  • Computing and telecommunications: Utilized in power management and signal processing circuits.

Q & A

  1. What is the package type of the BAV23C-HE3-08?

    The BAV23C-HE3-08 is packaged in a SOT-23 surface-mount package.

  2. Is the BAV23C-HE3-08 AEC-Q101 qualified?

    Yes, the BAV23C-HE3-08 is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications.

  3. What is the maximum continuous reverse voltage of the BAV23C-HE3-08?

    The maximum continuous reverse voltage is 200 V.

  4. What is the forward continuous current rating of the BAV23C-HE3-08?

    The forward continuous current rating is 400 mA.

  5. What is the typical forward voltage drop at 100 mA and 200 mA?

    The typical forward voltage drop is 1 V at 100 mA and 1.25 V at 200 mA.

  6. What is the reverse recovery time of the BAV23C-HE3-08?

    The reverse recovery time is 50 ns.

  7. What is the operating temperature range of the BAV23C-HE3-08?

    The operating temperature range is -55 °C to +150 °C.

  8. Is the BAV23C-HE3-08 RoHS-compliant?

    Yes, the BAV23C-HE3-08 is RoHS-compliant.

  9. What is the thermal resistance junction to ambient air for the BAV23C-HE3-08?

    The thermal resistance junction to ambient air is 420 K/W.

  10. What are some common applications of the BAV23C-HE3-08?

    Common applications include automotive systems, industrial electronics, consumer electronics, and computing and telecommunications.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Same Series
BAV23C-E3-08
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Similar Products

Part Number BAV23C-HE3-08 BAV23C-HE3-18 BAV23C-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V 200 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC) 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V 100 nA @ 200 V
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

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