BAS86-GS08
  • Share:

Vishay General Semiconductor - Diodes Division BAS86-GS08

Manufacturer No:
BAS86-GS08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 50V 200MA SOD80
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS86-GS08 is a small signal Schottky diode manufactured by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is particularly noted for its low forward voltage drop and high-speed switching capabilities. It is encapsulated in a MiniMELF (SOD-80) package, which is hermetically sealed and suitable for surface mount technology. The BAS86-GS08 is protected by a PN junction guard ring, making it resilient against excessive voltage and electrostatic discharges.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Continuous Reverse Voltage-VR50V
Forward Continuous Current-IF200mA
Repetitive Peak Forward Currenttp < 1 s, δ ≤ 0.5IFRM500mA
Power Dissipation-Ptot200mW
Thermal Resistance Junction to Ambient Air-RthJA300K/W
Junction Temperature-Tj125°C
Ambient Operating Temperature Range-Tamb-65 to +125°C
Storage Temperature Range-Tstg-65 to +150°C
Forward Voltage Droptp < 300 μs, IF = 0.1 mA, δ < 2%VF200 - 300mV
Reverse Leakage CurrentVR = 40 VIR5μA

Key Features

  • Low Forward Voltage Drop: The BAS86-GS08 features a low forward voltage drop, making it ideal for applications where low voltage losses are critical.
  • High-Speed Switching: This diode is designed for ultra-high-speed switching, making it suitable for fast switching and low logic level applications.
  • Guard Ring Protection: The diode is protected by a PN junction guard ring, which safeguards against excessive voltage and electrostatic discharges.
  • Hermetically Sealed Package: The MiniMELF (SOD-80) package is hermetically sealed, ensuring reliability and durability.
  • Surface Mount Technology: The diode is suitable for surface mount technology and can withstand immersion soldering.

Applications

The BAS86-GS08 is suitable for a variety of applications, including:

  • Protection of MOS Devices: Due to its low forward voltage drop and fast switching capabilities, it is ideal for protecting MOS devices.
  • Steering, Biasing, and Coupling Diodes: It is used in applications requiring fast switching and low logic levels.
  • Voltage Clamping and Protection Circuits: The diode is used in voltage clamping and protection circuits to safeguard against voltage spikes and surges.
  • Automotive and Industrial Applications: It is also used in automotive and industrial applications where high reliability and durability are required.

Q & A

  1. What is the continuous reverse voltage rating of the BAS86-GS08?
    The continuous reverse voltage rating is 50 V.
  2. What is the forward continuous current rating of the BAS86-GS08?
    The forward continuous current rating is 200 mA.
  3. What is the typical forward voltage drop of the BAS86-GS08?
    The typical forward voltage drop ranges from 200 mV to 300 mV at 0.1 mA.
  4. What type of package does the BAS86-GS08 come in?
    The BAS86-GS08 comes in a MiniMELF (SOD-80) package.
  5. Is the BAS86-GS08 suitable for surface mount technology?
    Yes, it is suitable for surface mount technology and can withstand immersion soldering.
  6. What is the junction temperature rating of the BAS86-GS08?
    The junction temperature rating is 125°C.
  7. What is the storage temperature range for the BAS86-GS08?
    The storage temperature range is -65°C to +150°C.
  8. Does the BAS86-GS08 have any protection features?
    Yes, it is protected by a PN junction guard ring against excessive voltage and electrostatic discharges.
  9. What are some common applications of the BAS86-GS08?
    Common applications include protection of MOS devices, steering, biasing, and coupling diodes, as well as voltage clamping and protection circuits.
  10. Is the BAS86-GS08 RoHS compliant?
    Yes, the BAS86-GS08 is RoHS compliant.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:900 mV @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:5 µA @ 40 V
Capacitance @ Vr, F:8pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:SOD-80 MiniMELF
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

$0.43
2,171

Please send RFQ , we will respond immediately.

Same Series
BAS86-GS18
BAS86-GS18
DIODE SCHOTTKY 50V 200MA SOD80

Similar Products

Part Number BAS86-GS08 BAS86-GS18 BAS81-GS08 BAS82-GS08 BAS83-GS08 BAS85-GS08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 40 V 50 V 60 V 30 V
Current - Average Rectified (Io) 200mA 200mA 30mA 30mA (DC) 30mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 900 mV @ 100 mA 900 mV @ 100 mA 1 V @ 15 mA 1 V @ 15 mA 1 V @ 15 mA 800 mV @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns - - - 5 ns
Current - Reverse Leakage @ Vr 5 µA @ 40 V 5 µA @ 40 V 200 nA @ 40 V 200 nA @ 50 V 200 nA @ 60 V 2 µA @ 25 V
Capacitance @ Vr, F 8pF @ 1V, 1MHz 8pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 1.6pF @ 1V, 1MHz 10pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80 DO-213AC, MINI-MELF, SOD-80
Supplier Device Package SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF SOD-80 MiniMELF
Operating Temperature - Junction 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max) 125°C (Max)

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
MBR2H100SFT3G
MBR2H100SFT3G
onsemi
DIODE SCHOTTKY 100V 2A SOD123FL
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL

Related Product By Brand

SM6T33A-M3/5B
SM6T33A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T18AHM3_A/I
SM15T18AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM15T150CAHE3/9AT
SM15T150CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
BAS40-05-E3-08
BAS40-05-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MBR2545CT-7HE3/45
MBR2545CT-7HE3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY ARRAY TO220AB
LL4148-M-08
LL4148-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
1N4148W-HE3-08
1N4148W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BZX384C5V6-E3-08
BZX384C5V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 200MW SOD323
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX84C75-E3-18
BZX84C75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 300MW SOT23-3