1N5821-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N5821-E3/54

Manufacturer No:
1N5821-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5821-E3/54 is a Schottky Barrier Rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is designed for use in various low-voltage, high-frequency applications. It features a low forward voltage drop, making it suitable for efficient power conversion and rectification. The 1N5821 is part of the 1N5820-1N5822 series, which offers different voltage ratings to cater to various application needs.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 30 V
Maximum RMS Voltage VRMS 21 V
Maximum DC Blocking Voltage VDC 30 V
Non-Repetitive Peak Reverse Voltage VRSM 36 V
Maximum Average Forward Rectified Current IF(AV) 3.0 A
Peak Forward Surge Current IFSM 80 A
Maximum Instantaneous Forward Voltage VF 0.500 V
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +125 °C
Package DO-201AD
Mounting Type Through Hole

Key Features

  • Low forward voltage drop (VF = 0.500 V at IF = 3 A)
  • High surge current capability (IFSM = 80 A)
  • High frequency operation suitability
  • RoHS-compliant and meets UL 94 V-0 flammability rating
  • Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102
  • Operating junction temperature range from -65°C to +125°C

Applications

  • Low voltage high frequency inverters
  • Freewheeling diodes in DC/DC converters
  • Polarity protection applications
  • General rectification and switching applications

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N5821?

    The maximum repetitive peak reverse voltage (VRRM) is 30 V.

  2. What is the maximum average forward rectified current of the 1N5821?

    The maximum average forward rectified current (IF(AV)) is 3.0 A.

  3. What is the typical forward voltage drop of the 1N5821?

    The typical forward voltage drop (VF) is 0.500 V at IF = 3 A.

  4. What is the operating junction temperature range of the 1N5821?

    The operating junction temperature range is from -65°C to +125°C.

  5. Is the 1N5821 RoHS-compliant?
  6. What type of package does the 1N5821 come in?

    The 1N5821 comes in a DO-201AD package.

  7. What is the peak forward surge current of the 1N5821?

    The peak forward surge current (IFSM) is 80 A.

  8. What are some common applications of the 1N5821?

    Common applications include low voltage high frequency inverters, freewheeling diodes in DC/DC converters, and polarity protection.

  9. Is the 1N5821 suitable for high-frequency operations?
  10. What is the mounting type of the 1N5821?

    The mounting type is through-hole.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2 mA @ 30 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

$0.47
1,548

Please send RFQ , we will respond immediately.

Same Series
1N5822-E3/54
1N5822-E3/54
DIODE SCHOTTKY 40V 3A DO201AD
1N5820-E3/54
1N5820-E3/54
DIODE SCHOTTKY 20V 3A DO201AD
1N5822-E3/73
1N5822-E3/73
DIODE SCHOTTKY 40V 3A DO201AD
1N5820-E3/73
1N5820-E3/73
DIODE SCHOTTKY 20V 3A DO201AD

Similar Products

Part Number 1N5821-E3/54 1N5822-E3/54 1N5820-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 40 V 20 V
Current - Average Rectified (Io) 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 525 mV @ 3 A 475 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 2 mA @ 30 V 2 mA @ 40 V 2 mA @ 20 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

SM6T15AHE3_A/H
SM6T15AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T36AHE3_A/I
SM6T36AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T6V8A-E3/5B
SM6T6V8A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AA
SM15T18CAHM3/H
SM15T18CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BAT43W-G3-08
BAT43W-G3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MUR120-E3/54
MUR120-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BZX384B3V0-E3-08
BZX384B3V0-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323
BZX84C30-HE3-08
BZX84C30-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84B6V2-E3-18
BZX84B6V2-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3
BZX84C43-G3-08
BZX84C43-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 43V 300MW SOT23-3