1N4002GPE-M3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPE-M3/73

Manufacturer No:
1N4002GPE-M3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURPOSE DO-204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPE-M3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, which is widely used in various applications requiring reliable and efficient rectification. The 1N4002GPE-M3/73 is designed for use in power supplies, inverters, converters, and freewheeling diode applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Peak Forward Surge Current (square wave, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Typical Junction Capacitance CJ 15 pF pF
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C °C
Package DO-41 (DO-204AL)
Mounting Type Through Hole

Key Features

  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 V, ensuring efficient rectification with minimal voltage loss.
  • Low Leakage Current: It features a maximum DC reverse current of 5.0 μA at the rated DC blocking voltage, reducing power consumption in standby modes.
  • High Forward Surge Capability: The diode can handle peak forward surge currents up to 30 A for 8.3 ms sine-wave and 45 A for square waveforms with tp = 1 ms.
  • High Operating Temperature Range: The diode operates within a junction and storage temperature range of -50 to +150 °C, making it suitable for a wide range of environments.
  • RoHS Compliance: The E3 suffix indicates that the diode meets RoHS compliance standards, ensuring it is environmentally friendly.
  • Solderable Leads: The matte tin plated leads are solderable per J-STD-002 and JESD 22-B102 standards.

Applications

The 1N4002GPE-M3/73 is designed for use in various applications, including:

  • General Purpose Rectification: Suitable for power supplies, inverters, and converters.
  • Freewheeling Diodes: Used in applications where a diode is needed to provide a path for current to flow when the main power source is turned off.
  • Bridge Rectifier Applications: Can be used in bridge rectifier configurations for AC-DC conversion.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GPE-M3/73 diode?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current capability of the diode?

    The diode can handle a peak forward surge current of 30 A for 8.3 ms sine-wave and 45 A for square waveforms with tp = 1 ms.

  4. What is the maximum instantaneous forward voltage of the diode?

    The maximum instantaneous forward voltage is 1.1 V.

  5. What is the typical junction capacitance of the diode?

    The typical junction capacitance is 15 pF at 4 V and 1 MHz.

  6. What is the operating junction and storage temperature range of the diode?

    The operating junction and storage temperature range is -50 to +150 °C.

  7. Is the 1N4002GPE-M3/73 diode RoHS compliant?

    Yes, the E3 suffix indicates that the diode is RoHS compliant.

  8. What type of package does the 1N4002GPE-M3/73 diode come in?

    The diode comes in a DO-41 (DO-204AL) package.

  9. What are some common applications for the 1N4002GPE-M3/73 diode?

    Common applications include general purpose rectification, freewheeling diodes, and bridge rectifier configurations.

  10. Is the 1N4002GPE-M3/73 diode suitable for high-temperature environments?

    Yes, it operates within a wide temperature range, making it suitable for various environmental conditions.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
578

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T68AHM3/H
SM15T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
MURS120-E3/5BT
MURS120-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84C4V7-E3-18
BZX84C4V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84C6V8-E3-18
BZX84C6V8-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 300MW SOT23-3
BZX84C62-G3-18
BZX84C62-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84C13-G3-08
BZX84C13-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 13V 300MW SOT23-3
BZX84C7V5-G3-08
BZX84C7V5-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 300MW SOT23-3
BZX384C2V4-G3-08
BZX384C2V4-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323