Overview
The UCC21750-Q1 is a galvanic isolated single-channel gate driver designed by Texas Instruments for use with SiC MOSFETs and IGBTs up to 2121-V DC operating voltage. This device is AEC-Q100 qualified, making it suitable for automotive applications. It features advanced protection mechanisms, best-in-class dynamic performance, and robustness. The gate driver includes state-of-the-art protection features such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize the switching behavior of SiC and IGBT devices.
Key Specifications
Parameter | Value |
---|---|
Isolation Voltage | 5.7-kV RMS, 12.8-kV PK surge immunity |
Operating Temperature Range | -40°C to +125°C ambient, -40°C to 150°C junction |
ESD Classification | HBM Level 3A, CDM Level C3 |
Output Drive Voltage | 33-V maximum (VDD – VEE) |
Drive Strength | ±10-A peak source and sink current |
Common Mode Transient Immunity (CMTI) | > 150-V/ns |
DESAT Protection Response Time | 200-ns |
Internal Active Miller Clamp | 4-A |
Soft Turn-off Current | 400-mA when fault occurs |
Package Type | SOIC-16 DW |
Creepage and Clearance Distance | > 8 mm |
Safety Certifications | Reinforced insulation per DIN EN IEC 60747-17, UL 1577 component recognition program |
Key Features
- Advanced protection features including fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, and active miller clamp.
- Input and output side power supply UVLO for optimized SiC and IGBT switching behavior.
- Isolated analog to PWM sensor for temperature or voltage sensing.
- High common mode transient immunity (CMTI) of > 150-V/ns.
- Fast DESAT protection with a response time of 200-ns.
- Internal active miller clamp of 4-A and soft turn-off current of 400-mA when a fault occurs.
- Low part-to-part skew and high isolation barrier life (> 40 years).
- Rejects < 40-ns noise transient and pulse on input pins.
Applications
The UCC21750-Q1 is designed for use in automotive applications, particularly for driving SiC MOSFETs and IGBTs. It is suitable for various high-voltage and high-reliability systems such as electric vehicles, hybrid electric vehicles, and other automotive power electronics.
Q & A
- What is the isolation voltage of the UCC21750-Q1?
The UCC21750-Q1 has an isolation voltage of 5.7-kV RMS and 12.8-kV PK surge immunity.
- What is the operating temperature range of the UCC21750-Q1?
The device operates in an ambient temperature range of -40°C to +125°C and a junction temperature range of -40°C to 150°C.
- What are the ESD classification levels for the UCC21750-Q1?
The device has an HBM ESD classification level of 3A and a CDM ESD classification level of C3.
- What is the maximum output drive voltage of the UCC21750-Q1?
The maximum output drive voltage is 33-V (VDD – VEE).
- What is the drive strength of the UCC21750-Q1?
The device has a drive strength of ±10-A peak source and sink current.
- What is the common mode transient immunity (CMTI) of the UCC21750-Q1?
The CMTI is greater than 150-V/ns).
- What is the response time for DESAT protection in the UCC21750-Q1?
The response time for DESAT protection is 200-ns).
- What is the internal active miller clamp current of the UCC21750-Q1?
The internal active miller clamp current is 4-A).
- What is the soft turn-off current when a fault occurs in the UCC21750-Q1?
The soft turn-off current is 400-mA when a fault occurs).
- What safety certifications does the UCC21750-Q1 have?
The device has reinforced insulation per DIN EN IEC 60747-17 and UL 1577 component recognition program certifications).