BM6104FV-CE2
  • Share:

Rohm Semiconductor BM6104FV-CE2

Manufacturer No:
BM6104FV-CE2
Manufacturer:
Rohm Semiconductor
Package:
Tape & Reel (TR)
Description:
DGTL ISO 2.5KV GATE DRVR 20SSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BM6104FV-CE2 is a high-performance isolated gate driver produced by ROHM Semiconductor. This component is designed to provide galvanic isolation, making it suitable for applications that require high voltage isolation and reliable signal transmission. The BM6104FV-CE2 features a single channel and is optimized for driving power devices such as IGBTs and MOSFETs in various power management and motor control systems.

Key Specifications

SpecificationValue
TechnologyMagnetic Coupling
Number of Channels1
Voltage - Isolation2500Vrms
Common Mode Transient Immunity (Min)100kV/µs
I/O Delay Time150ns
Minimum Input Pulse Width90ns

Key Features

  • High isolation voltage of 2500Vrms, ensuring reliable operation in high-voltage environments.
  • Single-channel design for simplicity and efficiency.
  • Low I/O delay time of 150ns and minimum input pulse width of 90ns, facilitating fast and precise signal transmission.
  • Common mode transient immunity of 100kV/µs, providing robust protection against transient voltages.
  • Compliant with RoHS standards, making it environmentally friendly.

Applications

The BM6104FV-CE2 is widely used in various applications requiring high voltage isolation and reliable signal transmission. These include:

  • Power management systems, such as DC-DC converters and power supplies.
  • Motor control systems, including industrial drives and servo motors.
  • Renewable energy systems, such as solar and wind power inverters.
  • Automotive systems, including electric vehicle charging and powertrain control.

Q & A

  1. What is the isolation voltage of the BM6104FV-CE2? The isolation voltage is 2500Vrms.
  2. How many channels does the BM6104FV-CE2 have? It has one channel.
  3. What is the I/O delay time of the BM6104FV-CE2? The I/O delay time is 150ns.
  4. What is the minimum input pulse width for the BM6104FV-CE2? The minimum input pulse width is 90ns.
  5. Is the BM6104FV-CE2 RoHS compliant? Yes, it is RoHS compliant.
  6. What is the common mode transient immunity of the BM6104FV-CE2? The common mode transient immunity is 100kV/µs.
  7. In what types of applications is the BM6104FV-CE2 commonly used? It is commonly used in power management, motor control, renewable energy, and automotive systems.
  8. What technology does the BM6104FV-CE2 use for isolation? It uses magnetic coupling technology.
  9. Where can I find detailed specifications for the BM6104FV-CE2? Detailed specifications can be found on the official ROHM Semiconductor website and through authorized distributors like Mouser and Digi-Key.
  10. Is the BM6104FV-CE2 suitable for high-voltage environments? Yes, it is designed for high-voltage environments with its 2500Vrms isolation voltage.

Product Attributes

Technology:Magnetic Coupling
Number of Channels:1
Voltage - Isolation:2500Vrms
Common Mode Transient Immunity (Min):100kV/µs
Propagation Delay tpLH / tpHL (Max):150ns, 150ns
Pulse Width Distortion (Max):- 
Rise / Fall Time (Typ):50ns, 50ns
Current - Output High, Low:- 
Current - Peak Output:5A, 1A
Voltage - Forward (Vf) (Typ):- 
Current - DC Forward (If) (Max):- 
Voltage - Output Supply:10V ~ 24V
Operating Temperature:-40°C ~ 125°C
Mounting Type:Surface Mount
Package / Case:20-SSOP (0.240", 6.10mm Width)
Supplier Device Package:20-SSOP-BW
Approval Agency:UR
0 Remaining View Similar

In Stock

-
603

Please send RFQ , we will respond immediately.

Related Product By Categories

NCV57001DWR2G
NCV57001DWR2G
onsemi
IC IGBT GATE DRIVER
ADUM4223WARWZ
ADUM4223WARWZ
Analog Devices Inc.
DGTL ISO 5KV 2CH GATE DVR 16SOIC
UCC5320SCD
UCC5320SCD
Texas Instruments
DGTL ISO 3KV 1CH GATE DRVR 8SOIC
UCC21220D
UCC21220D
Texas Instruments
4-A, 6-A, 3.0-KVRMS ISOLATED DUA
TLP152(E
TLP152(E
Toshiba Semiconductor and Storage
X36 PB-F PHOTOCOUPLER IGBT/MOSFE
TLP701H(F)
TLP701H(F)
Toshiba Semiconductor and Storage
OPTOISO 5KV GATE DRIVER 6SDIP GW
ISO5500DWR
ISO5500DWR
Texas Instruments
DGTL ISO 4.243KV GATE DVR 16SOIC
TLP250(D4-INV,F)
TLP250(D4-INV,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP350(D4-LF1,Z,F)
TLP350(D4-LF1,Z,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP350(D4-TP1,Z,F)
TLP350(D4-TP1,Z,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP250(D4FA-TP1S,F
TLP250(D4FA-TP1S,F
Toshiba Semiconductor and Storage
PHOTOCOUPLER
TLP350F(LF4,Z,F)
TLP350F(LF4,Z,F)
Toshiba Semiconductor and Storage
PHOTOCOUPLER

Related Product By Brand

MMBZ10VALT116
MMBZ10VALT116
Rohm Semiconductor
TVS DIODE 6.5VWM 14.2VC SOT23
BAS40-05HYFHT116
BAS40-05HYFHT116
Rohm Semiconductor
40V, 120MA, SOT-23, CATHODE COMM
BAT54AHMT116
BAT54AHMT116
Rohm Semiconductor
BAT54AHM IS SCHOTTKY BARRIER DIO
BAS16HYFHT116
BAS16HYFHT116
Rohm Semiconductor
HIGH SPEED SWITCHING, 80V, 215MA
RB751S-40SPTE61
RB751S-40SPTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD
BZX84B33VLYT116
BZX84B33VLYT116
Rohm Semiconductor
250MW, 33V, SOT-23, ZENER DIODE
BZX84C15VLT116
BZX84C15VLT116
Rohm Semiconductor
DIODE ZENER 15V 250MW SSD3
BZX84C15VLFHT116
BZX84C15VLFHT116
Rohm Semiconductor
DIODE ZENER 14.7V 250MW SSD3
BZX84B11VLT116
BZX84B11VLT116
Rohm Semiconductor
DIODE ZENER 11V 250MW SSD3
BZX84C20VLFHT116
BZX84C20VLFHT116
Rohm Semiconductor
DIODE ZENER 20V 250MW SSD3
LM324FVJ-E2
LM324FVJ-E2
Rohm Semiconductor
IC OPAMP GP 4 CIRCUIT 14TSSOP
BD14000EFV-CE2
BD14000EFV-CE2
Rohm Semiconductor
IC LSI CELL BALANCE 30HTSSOP