Overview
The LM5113SD/NOPB is a high-performance half-bridge gate driver designed by Texas Instruments. This device is specifically tailored to drive both the high-side and low-side enhancement mode Gallium Nitride (GaN) FETs in synchronous buck or half-bridge configurations. It features independent high-side and low-side TTL logic inputs, making it versatile for various power management applications. The LM5113SD/NOPB is known for its robust design, low power consumption, and excellent propagation delay matching, making it an ideal choice for high-frequency switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | LM5113SD/NOPB |
| Manufacturer | Texas Instruments |
| Main Category | Integrated Circuits (ICs) - PMIC - Gate Drivers |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 4.5 V ~ 5.5 V |
| Logic Voltage - VIL, VIH | 1.76 V, 1.89 V |
| Current - Peak Output (Source, Sink) | 1.2 A, 5 A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 107 V |
| Rise / Fall Time (Typ) | 7 ns, 1.5 ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 10-WDFN Exposed Pad |
Key Features
- Independent high-side and low-side TTL logic inputs compatible with up to 14 V input voltages.
- Peak source/sink current of 1.2 A / 5 A.
- High-side floating bias voltage rail operating up to 100 VDC, with internal bootstrap supply voltage clamping at 5.2 V.
- Split gate outputs for adjustable turn-on and turn-off strength.
- Fast propagation times (28 ns typical) and excellent propagation delay matching (1.5 ns typical).
- Supply rail undervoltage lockout and low power consumption.
- Pulldown/pullup resistance of 0.6-Ω / 2.1-Ω.
- Available in 10-WSON and 12-bump DSBGA packages, with the WSON package featuring an exposed pad for enhanced power dissipation.
Applications
The LM5113SD/NOPB is designed for use in high-frequency switching applications, particularly in synchronous buck converters and half-bridge configurations. It is well-suited for driving enhancement mode GaN FETs, making it a valuable component in power management systems for various industries, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Renewable energy systems, such as solar and wind power inverters.
- High-efficiency power conversion in data centers and server systems.
Q & A
- What is the primary function of the LM5113SD/NOPB?
The LM5113SD/NOPB is a half-bridge gate driver designed to drive both high-side and low-side enhancement mode Gallium Nitride (GaN) FETs in synchronous buck or half-bridge configurations.
- What are the key features of the LM5113SD/NOPB?
Key features include independent high-side and low-side TTL logic inputs, peak source/sink current of 1.2 A / 5 A, high-side floating bias voltage rail, and split gate outputs for adjustable turn-on and turn-off strength.
- What is the operating voltage range of the LM5113SD/NOPB?
The device operates with a supply voltage range of 4.5 V to 5.5 V.
- What is the maximum high-side voltage for the LM5113SD/NOPB?
The high-side voltage can operate up to 107 V using a bootstrap technique.
- What are the typical rise and fall times of the LM5113SD/NOPB?
The typical rise and fall times are 7 ns and 1.5 ns, respectively.
- What is the operating temperature range of the LM5113SD/NOPB?
The device operates over a temperature range of -40°C to 125°C (TJ).
- In what packages is the LM5113SD/NOPB available?
The device is available in 10-WSON and 12-bump DSBGA packages.
- What are some common applications of the LM5113SD/NOPB?
Common applications include power supplies, DC-DC converters, motor control systems, renewable energy systems, and high-efficiency power conversion in data centers.
- Is the LM5113SD/NOPB RoHS compliant?
Yes, the LM5113SD/NOPB is RoHS compliant.
- What is the significance of the exposed pad in the WSON package?
The exposed pad in the WSON package aids in power dissipation, enhancing the thermal performance of the device.
