LM5113SDE/NOPB
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Texas Instruments LM5113SDE/NOPB

Manufacturer No:
LM5113SDE/NOPB
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
IC GATE DRVR HALF-BRIDGE 10WSON
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Payment:
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Product Introduction

Overview

The LM5113SDE/NOPB, manufactured by Texas Instruments, is a 1.2-A/5-A, 90-V half-bridge gate driver specifically designed to drive both the high-side and low-side enhancement mode Gallium Nitride (GaN) FETs. This device is suitable for synchronous buck or half-bridge configurations. The LM5113 features independent high-side and low-side TTL logic inputs, which can withstand input voltages up to 14 V regardless of the VDD voltage. The high-side driver operates using a bootstrap technique with the bias voltage internally clamped at 5.2 V to prevent exceeding the maximum gate-source voltage rating of the GaN FETs.

Key Specifications

Parameter Value Description
Peak Source/Sink Current 1.2 A / 5 A Maximum current the driver can source or sink
High-Side Floating Bias Voltage Rail Up to 100 VDC Maximum voltage the high-side driver can operate at
Internal Bootstrap Supply Voltage Clamping 5.2 V typical Clamping voltage to prevent gate voltage from exceeding the maximum gate-source voltage rating
Pull-down/Pull-up Resistance 0.6 Ω / 2.1 Ω Resistance values for turn-off and turn-on paths
Propagation Times 28 ns typical Time for the signal to propagate through the driver
Propagation Delay Matching 1.5 ns typical Difference in propagation times between high-side and low-side drivers
Supply Rail Undervoltage Lockout (UVLO) 3.8 V (VDD), 3.2 V (Bootstrap) Voltage thresholds below which the driver is disabled
Package Options WSON-10, DSBGA-12 Available package types for the LM5113

Key Features

  • Independent High-Side and Low-Side TTL Logic Inputs: Inputs can withstand voltages up to 14 V regardless of the VDD voltage.
  • Split Gate Outputs: Allows for adjustable turn-on and turn-off strength independently.
  • Internal Bootstrap Supply Voltage Clamping: Prevents the gate voltage from exceeding the maximum gate-source voltage rating of GaN FETs.
  • Fast Propagation Times and Excellent Propagation Delay Matching: Ensures high-frequency operation with minimal delay mismatch.
  • Supply Rail Undervoltage Lockout (UVLO): Prevents partial turn-on of GaN FETs when the supply voltage is below the threshold.
  • Low Power Consumption: Optimized for efficient operation.
  • Compact Packaging Options: Available in WSON-10 and DSBGA-12 packages, aiding in power dissipation and minimizing package inductance.

Applications

  • Merchant Telecom Rectifiers: Used in high-efficiency power conversion systems.
  • Merchant DC/DC Converters: Suitable for high-frequency switching applications.
  • Closed Loop Stepper Motor Drive: Enhances motor control precision and efficiency.
  • Baseband Unit (BBU) and Macro Remote Radio Unit (RRU): Used in telecommunications infrastructure for high-power conversion needs.

Q & A

  1. What is the maximum voltage the LM5113 can operate at?

    The LM5113 can operate up to 100 VDC on the high-side floating bias voltage rail.

  2. What is the purpose of the internal bootstrap supply voltage clamping?

    The internal clamping prevents the gate voltage from exceeding the maximum gate-source voltage rating of the GaN FETs, typically clamped at 5.2 V.

  3. What are the pull-down and pull-up resistance values of the LM5113?

    The pull-down resistance is 0.6 Ω, and the pull-up resistance is 2.1 Ω.

  4. What is the propagation delay matching of the LM5113?

    The propagation delay matching is typically 1.5 ns.

  5. What are the package options available for the LM5113?

    The LM5113 is available in WSON-10 and DSBGA-12 packages.

  6. Can the LM5113 operate at high frequencies?
  7. What is the purpose of the supply rail undervoltage lockout (UVLO)?

    The UVLO prevents the GaN FETs from being partially turned on when the supply voltage is below the threshold (3.8 V for VDD and 3.2 V for bootstrap).

  8. How do the split gate outputs of the LM5113 benefit its operation?

    The split gate outputs allow for adjustable turn-on and turn-off strength independently, providing flexibility in switching speed adjustment.

  9. What types of applications is the LM5113 suitable for?

    The LM5113 is suitable for applications such as merchant telecom rectifiers, DC/DC converters, closed loop stepper motor drives, and telecommunications infrastructure like BBU and RRU.

  10. How does the LM5113 handle power dissipation?

    The WSON-10 package includes an exposed pad to aid power dissipation, and the DSBGA package offers a compact footprint with minimized package inductance.

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:4.5V ~ 5.5V
Logic Voltage - VIL, VIH:1.76V, 1.89V
Current - Peak Output (Source, Sink):1.2A, 5A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):107 V
Rise / Fall Time (Typ):7ns, 1.5ns
Operating Temperature:-40°C ~ 125°C (TJ)
Mounting Type:Surface Mount
Package / Case:10-WDFN Exposed Pad
Supplier Device Package:10-WSON (4x4)
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Similar Products

Part Number LM5113SDE/NOPB LM5113SDX/NOPB LM5113SD/NOPB
Manufacturer Texas Instruments Texas Instruments Texas Instruments
Product Status Not For New Designs Not For New Designs Not For New Designs
Driven Configuration Half-Bridge Half-Bridge Half-Bridge
Channel Type Independent Independent Independent
Number of Drivers 2 2 2
Gate Type N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 4.5V ~ 5.5V 4.5V ~ 5.5V 4.5V ~ 5.5V
Logic Voltage - VIL, VIH 1.76V, 1.89V 1.76V, 1.89V 1.76V, 1.89V
Current - Peak Output (Source, Sink) 1.2A, 5A 1.2A, 5A 1.2A, 5A
Input Type Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 107 V 107 V 107 V
Rise / Fall Time (Typ) 7ns, 1.5ns 7ns, 1.5ns 7ns, 1.5ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 10-WDFN Exposed Pad 10-WDFN Exposed Pad 10-WDFN Exposed Pad
Supplier Device Package 10-WSON (4x4) 10-WSON (4x4) 10-WSON (4x4)

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