BAS20W RVG
  • Share:

Taiwan Semiconductor Corporation BAS20W RVG

Manufacturer No:
BAS20W RVG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 150V 200MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS20W RVG is a small signal switching diode produced by Taiwan Semiconductor Corporation. It is part of the BAS19W/20W/21W series and is designed for general-purpose switching applications. This diode is packaged in a SOT-323 case, making it suitable for surface mount technology (SMT) assembly. The BAS20W RVG is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM150V
DC Blocking VoltageV(BR)150V
Average Rectified Output CurrentIO200mA
Reverse Voltage Leakage Current at VR = 100 VIR0.1µA
Forward Voltage at IF = 30 mAVF1V
Reverse Recovery Timetrr50ns
Power DissipationPD625mW
Thermal Resistance from Junction to AmbientRθJA200°C/W
Junction TemperatureTJ150°C
Storage Temperature RangeTSTG-55 to +150°C

Key Features

  • Surface Mounted Device (SMD) in SOT-323 package
  • Pb-free and RoHS compliant
  • Moisture sensitivity level 1
  • High temperature soldering guaranteed: 260°C/10s
  • Low forward voltage drop and fast reverse recovery time
  • Green compound for environmental sustainability

Applications

The BAS20W RVG is suitable for a variety of general-purpose switching applications, including but not limited to:

  • Switching circuits in consumer electronics
  • Automotive electronics (non-critical applications)
  • Industrial control systems
  • Communication devices

Q & A

  1. What is the peak repetitive reverse voltage of the BAS20W RVG?
    The peak repetitive reverse voltage of the BAS20W RVG is 150 V.
  2. What is the average rectified output current of the BAS20W RVG?
    The average rectified output current of the BAS20W RVG is 200 mA.
  3. Is the BAS20W RVG Pb-free and RoHS compliant?
    Yes, the BAS20W RVG is Pb-free and RoHS compliant.
  4. What is the junction temperature range of the BAS20W RVG?
    The junction temperature range of the BAS20W RVG is up to 150°C.
  5. What is the thermal resistance from junction to ambient for the BAS20W RVG?
    The thermal resistance from junction to ambient for the BAS20W RVG is 200 °C/W.
  6. What is the storage temperature range for the BAS20W RVG?
    The storage temperature range for the BAS20W RVG is -55 to +150 °C.
  7. What package type is used for the BAS20W RVG?
    The BAS20W RVG is packaged in a SOT-323 case.
  8. Is the BAS20W RVG suitable for high-temperature soldering?
    Yes, the BAS20W RVG is guaranteed for high-temperature soldering up to 260°C for 10 seconds.
  9. What are some common applications of the BAS20W RVG?
    The BAS20W RVG is commonly used in switching circuits in consumer electronics, automotive electronics, industrial control systems, and communication devices.
  10. Does the BAS20W RVG contain any hazardous materials?
    No, the BAS20W RVG is made from green compound and is free from lead and other hazardous materials, making it RoHS compliant.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.05
694

Please send RFQ , we will respond immediately.

Same Series
BAS19W RVG
BAS19W RVG
DIODE GEN PURP 100V 200MA SOT323
BAS21W RVG
BAS21W RVG
DIODE GEN PURP 250V 200MA SOT323

Similar Products

Part Number BAS20W RVG BAS21W RVG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 250 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 100 mA 1.25 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 250 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY

Related Product By Brand

BAV99S REG
BAV99S REG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT363
MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
MUR460SHM6G
MUR460SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
BAV21 A0G
BAV21 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA DO35
MUR460HA0G
MUR460HA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
1N4937G B0G
1N4937G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43 R0G
BAT43 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
BZV55B47 L0G
BZV55B47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZV55B68 L0G
BZV55B68 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 68V 500MW MINI MELF
BZX585B6V8 RSG
BZX585B6V8 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZV55C15 L1G
BZV55C15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF
BZV55C3V6 L1G
BZV55C3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF