BAS20W RVG
  • Share:

Taiwan Semiconductor Corporation BAS20W RVG

Manufacturer No:
BAS20W RVG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 150V 200MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS20W RVG is a small signal switching diode produced by Taiwan Semiconductor Corporation. It is part of the BAS19W/20W/21W series and is designed for general-purpose switching applications. This diode is packaged in a SOT-323 case, making it suitable for surface mount technology (SMT) assembly. The BAS20W RVG is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM150V
DC Blocking VoltageV(BR)150V
Average Rectified Output CurrentIO200mA
Reverse Voltage Leakage Current at VR = 100 VIR0.1µA
Forward Voltage at IF = 30 mAVF1V
Reverse Recovery Timetrr50ns
Power DissipationPD625mW
Thermal Resistance from Junction to AmbientRθJA200°C/W
Junction TemperatureTJ150°C
Storage Temperature RangeTSTG-55 to +150°C

Key Features

  • Surface Mounted Device (SMD) in SOT-323 package
  • Pb-free and RoHS compliant
  • Moisture sensitivity level 1
  • High temperature soldering guaranteed: 260°C/10s
  • Low forward voltage drop and fast reverse recovery time
  • Green compound for environmental sustainability

Applications

The BAS20W RVG is suitable for a variety of general-purpose switching applications, including but not limited to:

  • Switching circuits in consumer electronics
  • Automotive electronics (non-critical applications)
  • Industrial control systems
  • Communication devices

Q & A

  1. What is the peak repetitive reverse voltage of the BAS20W RVG?
    The peak repetitive reverse voltage of the BAS20W RVG is 150 V.
  2. What is the average rectified output current of the BAS20W RVG?
    The average rectified output current of the BAS20W RVG is 200 mA.
  3. Is the BAS20W RVG Pb-free and RoHS compliant?
    Yes, the BAS20W RVG is Pb-free and RoHS compliant.
  4. What is the junction temperature range of the BAS20W RVG?
    The junction temperature range of the BAS20W RVG is up to 150°C.
  5. What is the thermal resistance from junction to ambient for the BAS20W RVG?
    The thermal resistance from junction to ambient for the BAS20W RVG is 200 °C/W.
  6. What is the storage temperature range for the BAS20W RVG?
    The storage temperature range for the BAS20W RVG is -55 to +150 °C.
  7. What package type is used for the BAS20W RVG?
    The BAS20W RVG is packaged in a SOT-323 case.
  8. Is the BAS20W RVG suitable for high-temperature soldering?
    Yes, the BAS20W RVG is guaranteed for high-temperature soldering up to 260°C for 10 seconds.
  9. What are some common applications of the BAS20W RVG?
    The BAS20W RVG is commonly used in switching circuits in consumer electronics, automotive electronics, industrial control systems, and communication devices.
  10. Does the BAS20W RVG contain any hazardous materials?
    No, the BAS20W RVG is made from green compound and is free from lead and other hazardous materials, making it RoHS compliant.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 150 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.05
694

Please send RFQ , we will respond immediately.

Same Series
BAS19W RVG
BAS19W RVG
DIODE GEN PURP 100V 200MA SOT323
BAS21W RVG
BAS21W RVG
DIODE GEN PURP 250V 200MA SOT323

Similar Products

Part Number BAS20W RVG BAS21W RVG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 150 V 250 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 100 mA 1.25 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 150 V 100 nA @ 250 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBR1100RLG
MBR1100RLG
onsemi
DIODE SCHOTTKY 100V 1A AXIAL
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

1.5KE6.8A R0G
1.5KE6.8A R0G
Taiwan Semiconductor Corporation
TVS DIODE 5.8VWM 10.5VC DO201
MUR1660CT
MUR1660CT
Taiwan Semiconductor Corporation
DIODE ARRAY GP 600V 16A TO220AB
MUR1640CTH
MUR1640CTH
Taiwan Semiconductor Corporation
DIODE ARRAY GP 400V 16A TO220AB
1N4002GHR0G
1N4002GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
1N4007G B0G
1N4007G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55C47 L0G
BZV55C47 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZX84C12 RFG
BZX84C12 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 12V 300MW SOT23
BZV55B3V9 L1G
BZV55B3V9 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 500MW MINI MELF
BZV55B47 L1G
BZV55B47 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 47V 500MW MINI MELF
BZX585B6V8 RKG
BZX585B6V8 RKG
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 200MW SOD523F
BZX55C3V3 A0G
BZX55C3V3 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 3.3V 500MW DO35