STTH60RQ06WY
  • Share:

STMicroelectronics STTH60RQ06WY

Manufacturer No:
STTH60RQ06WY
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
AUTOMOTIVE TURBO 2 ULTRAFAST HIG
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH60RQ06WY, produced by STMicroelectronics, is a high-voltage, ultrafast recovery diode designed for applications requiring high-voltage capability. It is particularly suited for secondary rectification in high-voltage LLC full bridge topology and high voltage boost functions. This diode is ideal for use in switching power supplies and industrial applications, serving as a rectification function, or as a freewheeling and clamping diode.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 600 V
IF(AV) (Average Forward Current) 60 A
VF(max.) (Forward Voltage Drop) 1.45 V
trr(max.) (Reverse Recovery Time) 35 ns ns
Tj(max.) (Maximum Operating Junction Temperature) 175 °C
IFSM (Surge Non-Repetitive Forward Current) 425 A
Rth(j-c) (Junction to Case Thermal Resistance) 0.38 °C/W

Key Features

  • High junction temperature capability
  • Ultrafast with soft recovery behavior
  • Low reverse current
  • Low thermal resistance
  • Reduced switching and conduction losses
  • ECOPACK2 compliant component

Applications

The STTH60RQ06WY is recommended for industrial applications, particularly in:

  • Secondary rectification in high-voltage LLC full bridge topology
  • High voltage boost functions
  • Switching power supplies
  • Rectification, freewheeling, and clamping diode roles

Q & A

  1. What is the maximum repetitive peak reverse voltage of the STTH60RQ06WY?

    600 V

  2. What is the average forward current rating of the STTH60RQ06WY?

    60 A

  3. What is the maximum forward voltage drop of the STTH60RQ06WY?

    1.45 V

  4. What is the reverse recovery time of the STTH60RQ06WY?

    35 ns

  5. What is the maximum operating junction temperature of the STTH60RQ06WY?

    175 °C

  6. What is the surge non-repetitive forward current rating of the STTH60RQ06WY?

    425 A

  7. What is the junction to case thermal resistance of the STTH60RQ06WY?

    0.38 °C/W

  8. Is the STTH60RQ06WY ECOPACK2 compliant?
  9. What are the typical applications of the STTH60RQ06WY?

    Secondary rectification in high-voltage LLC full bridge topology, high voltage boost functions, switching power supplies, and as a rectification, freewheeling, and clamping diode.

  10. What package types are available for the STTH60RQ06WY?

    DO-247 and DO-247 LL

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):60A
Voltage - Forward (Vf) (Max) @ If:- 
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):65 ns
Current - Reverse Leakage @ Vr:80 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-247-2 (Straight Leads)
Supplier Device Package:DO-247
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$4.92
102

Please send RFQ , we will respond immediately.

Similar Products

Part Number STTH60RQ06WY STTH30RQ06WY STTH60RQ06W STTH60RQ06WL
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 60A 30A 60A 60A
Voltage - Forward (Vf) (Max) @ If - 2.95 V @ 30 A - 2.95 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 65 ns 55 ns 65 ns 65 ns
Current - Reverse Leakage @ Vr 80 µA @ 600 V 40 µA @ 600 V 80 µA @ 600 V 80 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) TO-247-2
Supplier Device Package DO-247 DO-247 DO-247 DO-247 LL
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C 175°C (Max) 175°C (Max)

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
BAV21WS-AQ
BAV21WS-AQ
Diotec Semiconductor
DIODE SOD-323 250V 0.2A 50NS
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
BAS116LT1G
BAS116LT1G
onsemi
DIODE GEN PURP 75V 200MA SOT23-3
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4148,133
1N4148,133
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP