STTH30R04G
  • Share:

STMicroelectronics STTH30R04G

Manufacturer No:
STTH30R04G
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
DIODE GEN PURP 400V 30A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH30R04G is an ultrafast recovery diode manufactured by STMicroelectronics. This device is designed with a compromise-free, high-quality approach, resulting in low leakage current, reproducible characteristics, and intrinsic ruggedness. It is ideal for heavy-duty applications that demand long-term reliability.

Key Specifications

Symbol Parameter Value Unit
IF(AV) Average forward current, δ = 0.5 30 A
VRRM Repetitive peak reverse voltage 400 V
Tj (max) Operating junction temperature range -40 to +175 °C
VF (typ) Forward voltage drop at IF = 30 A 1.45 V
trr (typ) Reverse recovery time 24 ns ns
IFRM Repetitive peak forward current 500 A A
IFSM Surge non-repetitive forward current 300 A A
Rth(j-c) Junction to case thermal resistance 1.15 °C/W
IR Reverse leakage current at Tj = 25°C, VR = VRRM 15 µA µA

Key Features

  • Ultrafast switching and recovery times, reducing switching and conduction losses.
  • Low reverse current and low thermal resistance.
  • High junction temperature capability up to 175°C.
  • ECOPACK®2 compliant, ensuring environmental sustainability.
  • Intrinsic ruggedness and regularly reproducible characteristics.

Applications

The STTH30R04G is suitable for a variety of heavy-duty applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems, such as solar and wind power.
  • Industrial power conversion and automation systems.

Q & A

  1. What is the maximum average forward current of the STTH30R04G?

    The maximum average forward current (IF(AV)) is 30 A.

  2. What is the repetitive peak reverse voltage (VRRM) of the STTH30R04G?

    The VRRM is 400 V.

  3. What is the typical forward voltage drop (VF) at 30 A?

    The typical forward voltage drop (VF) at 30 A is 1.45 V.

  4. What is the typical reverse recovery time (trr) of the STTH30R04G?

    The typical reverse recovery time (trr) is 24 ns.

  5. What is the junction to case thermal resistance (Rth(j-c))?

    The junction to case thermal resistance (Rth(j-c)) is 1.15 °C/W.

  6. Is the STTH30R04G RoHS compliant?

    Yes, the STTH30R04G is RoHS compliant.

  7. What are the typical operating junction temperature ranges for the STTH30R04G?

    The operating junction temperature range is -40 to +175 °C.

  8. What is the reverse leakage current at 25°C and VRRM?

    The reverse leakage current (IR) at 25°C and VRRM is 15 µA.

  9. What are some common applications for the STTH30R04G?

    Common applications include power supplies, motor drives, renewable energy systems, and industrial power conversion.

  10. What package types are available for the STTH30R04G?

    The STTH30R04G is available in TO-263-3, D2PAK (2 Leads + Tab), and TO-263AB packages.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.45 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:15 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$2.99
138

Please send RFQ , we will respond immediately.

Same Series
STTH30R04W
STTH30R04W
DIODE GEN PURP 400V 30A DO247
STTH30R04G-TR
STTH30R04G-TR
DIODE GEN PURP 400V 30A D2PAK
STTH30R04D
STTH30R04D
DIODE GEN PURP 400V 30A TO220AC
STTH30R04PI
STTH30R04PI
DIODE GEN PURP 400V 30A DOP3I

Similar Products

Part Number STTH30R04G STTH30R04W STTH20R04G STTH30R04D
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 400 V
Current - Average Rectified (Io) 30A 30A 20A 30A
Voltage - Forward (Vf) (Max) @ If 1.45 V @ 30 A 1.45 V @ 30 A 1.7 V @ 20 A 1.45 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 45 ns 100 ns
Current - Reverse Leakage @ Vr 15 µA @ 400 V 15 µA @ 400 V 20 µA @ 400 V 15 µA @ 400 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Through Hole Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DO-247-2 (Straight Leads) TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2
Supplier Device Package D2PAK DO-247 D2PAK TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C 175°C (Max) -40°C ~ 175°C

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA

Related Product By Brand

SMP100LC-200
SMP100LC-200
STMicroelectronics
THYRISTOR 200V 400A DO214AA
NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT