Overview
The STTH3006DPI is a 600V, 30A tandem Hyperfast Boost Diode produced by STMicroelectronics. This ultra-high performance diode is composed of two 300V dice in series, designed to drastically cut losses in associated MOSFETs when operating at high dIF/dt. It is especially suited for use as a boost diode in continuous mode power factor correctors and hard switching conditions. The STTH3006DPI features hyperfast recovery characteristics, allowing it to compete with SiC devices and enabling the downsizing of MOSFETs and heat sinks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VRRM (Repetitive peak reverse voltage) | 600 | V |
| IF(RMS) (RMS forward current) | 32 | A |
| IFSM (Surge non-repetitive forward current) | 180 | A |
| Tstg (Storage temperature range) | -65 to +150 | °C |
| Tj (Maximum operating junction temperature) | +150 | °C |
| VF (Forward voltage drop) | 1.95 to 2.4 | V |
| IRM (Reverse leakage current) | 40 to 400 | µA |
| trr (Reverse recovery time) | 25 to 45 | ns |
| Rth (j-c) (Junction to case thermal resistance) | 1.3 | °C/W |
Key Features
- Hyperfast recovery time to compete with SiC devices.
- Internal ceramic insulated devices with equal thermal conditions for both 300V diodes.
- Insulation (2500VRMS) allows placement on the same heat sink as the MOSFET.
- Flexible heat sinking on common or separate heat sinks.
- Static and dynamic equilibrium of internal diodes are warranted by design.
- Low conduction losses and high dIF/dt operation.
- Epoxy meets UL94, V0 standards.
Applications
The STTH3006DPI is particularly suited for use in continuous mode power factor correctors and hard switching conditions. It is ideal for applications requiring high performance and low losses, such as in power supplies, motor drives, and other high-power electronic systems.
Q & A
- What is the repetitive peak reverse voltage of the STTH3006DPI?
The repetitive peak reverse voltage is 600V. - What is the RMS forward current rating of the STTH3006DPI?
The RMS forward current rating is 32A. - What is the maximum surge non-repetitive forward current?
The maximum surge non-repetitive forward current is 180A. - What is the storage temperature range for the STTH3006DPI?
The storage temperature range is -65°C to +150°C. - What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C. - What is the forward voltage drop range for the STTH3006DPI?
The forward voltage drop range is 1.95V to 2.4V. - What is the reverse recovery time of the STTH3006DPI?
The reverse recovery time is 25ns to 45ns. - Can the STTH3006DPI be placed on the same heat sink as the MOSFET?
Yes, the insulation (2500VRMS) allows placement on the same heat sink as the MOSFET. - What are the key benefits of using the STTH3006DPI in high-power applications?
The key benefits include hyperfast recovery time, low conduction losses, and the ability to downsize MOSFETs and heat sinks. - What standards does the epoxy of the STTH3006DPI meet?
The epoxy meets UL94, V0 standards.
