STTH110UFY
  • Share:

STMicroelectronics STTH110UFY

Manufacturer No:
STTH110UFY
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A SMBFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH110UFY is a high-performance, ultrafast diode produced by STMicroelectronics. This component is designed using ST's advanced 1000 V planar technology, making it particularly suitable for various high-voltage applications. The diode is characterized by its low conduction losses, fast switching times, and high junction temperature tolerance, making it an ideal choice for modern electronic systems.

Key Specifications

ParameterValue
Repetitive Reverse Voltage (Vrrm Max)1000 V
Average Forward Current (IF(AV))1 A
Forward Voltage Drop (VF)1.7 V
Reverse Recovery Time (trr)75 ns
Peak Reverse Current (IRM)20 A
Package TypeDO-221AA (SMBflat)
Junction Temperature Range-40°C to 150°C

Key Features

  • Ultrafast recovery time of 75 ns, ensuring fast switching and minimal losses.
  • Low forward voltage drop of 1.7 V, reducing conduction losses.
  • High repetitive reverse voltage of 1000 V, suitable for high-voltage applications.
  • High junction temperature tolerance, allowing operation in demanding environments.
  • Compact DO-221AA (SMBflat) package, ideal for space-constrained designs.

Applications

The STTH110UFY is particularly suited for applications such as switching mode base drive and transistor circuits. It is also used in power supplies, DC-DC converters, and other high-frequency switching circuits where fast recovery and low losses are critical.

Q & A

  1. What is the maximum repetitive reverse voltage of the STTH110UFY?
    The maximum repetitive reverse voltage (Vrrm Max) is 1000 V.
  2. What is the average forward current rating of the STTH110UFY?
    The average forward current (IF(AV)) is 1 A.
  3. What is the forward voltage drop of the STTH110UFY?
    The forward voltage drop (VF) is 1.7 V.
  4. What is the reverse recovery time of the STTH110UFY?
    The reverse recovery time (trr) is 75 ns.
  5. What package type does the STTH110UFY use?
    The package type is DO-221AA (SMBflat).
  6. What is the junction temperature range of the STTH110UFY?
    The junction temperature range is -40°C to 150°C.
  7. What are the key applications of the STTH110UFY?
    The STTH110UFY is used in switching mode base drive and transistor circuits, power supplies, and DC-DC converters.
  8. Why is the STTH110UFY considered ultrafast?
    The STTH110UFY is considered ultrafast due to its low reverse recovery time of 75 ns.
  9. What technology is used in the STTH110UFY?
    The STTH110UFY uses ST's advanced 1000 V planar technology.
  10. Is the STTH110UFY suitable for high-temperature environments?
    Yes, the STTH110UFY has a high junction temperature tolerance, making it suitable for high-temperature environments.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-221AA, SMB Flat Leads
Supplier Device Package:SMBflat
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$0.80
201

Please send RFQ , we will respond immediately.

Similar Products

Part Number STTH110UFY STTH112UFY
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1200 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1.9 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1200 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case DO-221AA, SMB Flat Leads DO-221AA, SMB Flat Leads
Supplier Device Package SMBflat SMBflat
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK