STTH110UFY
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STMicroelectronics STTH110UFY

Manufacturer No:
STTH110UFY
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A SMBFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH110UFY is a high-performance, ultrafast diode produced by STMicroelectronics. This component is designed using ST's advanced 1000 V planar technology, making it particularly suitable for various high-voltage applications. The diode is characterized by its low conduction losses, fast switching times, and high junction temperature tolerance, making it an ideal choice for modern electronic systems.

Key Specifications

ParameterValue
Repetitive Reverse Voltage (Vrrm Max)1000 V
Average Forward Current (IF(AV))1 A
Forward Voltage Drop (VF)1.7 V
Reverse Recovery Time (trr)75 ns
Peak Reverse Current (IRM)20 A
Package TypeDO-221AA (SMBflat)
Junction Temperature Range-40°C to 150°C

Key Features

  • Ultrafast recovery time of 75 ns, ensuring fast switching and minimal losses.
  • Low forward voltage drop of 1.7 V, reducing conduction losses.
  • High repetitive reverse voltage of 1000 V, suitable for high-voltage applications.
  • High junction temperature tolerance, allowing operation in demanding environments.
  • Compact DO-221AA (SMBflat) package, ideal for space-constrained designs.

Applications

The STTH110UFY is particularly suited for applications such as switching mode base drive and transistor circuits. It is also used in power supplies, DC-DC converters, and other high-frequency switching circuits where fast recovery and low losses are critical.

Q & A

  1. What is the maximum repetitive reverse voltage of the STTH110UFY?
    The maximum repetitive reverse voltage (Vrrm Max) is 1000 V.
  2. What is the average forward current rating of the STTH110UFY?
    The average forward current (IF(AV)) is 1 A.
  3. What is the forward voltage drop of the STTH110UFY?
    The forward voltage drop (VF) is 1.7 V.
  4. What is the reverse recovery time of the STTH110UFY?
    The reverse recovery time (trr) is 75 ns.
  5. What package type does the STTH110UFY use?
    The package type is DO-221AA (SMBflat).
  6. What is the junction temperature range of the STTH110UFY?
    The junction temperature range is -40°C to 150°C.
  7. What are the key applications of the STTH110UFY?
    The STTH110UFY is used in switching mode base drive and transistor circuits, power supplies, and DC-DC converters.
  8. Why is the STTH110UFY considered ultrafast?
    The STTH110UFY is considered ultrafast due to its low reverse recovery time of 75 ns.
  9. What technology is used in the STTH110UFY?
    The STTH110UFY uses ST's advanced 1000 V planar technology.
  10. Is the STTH110UFY suitable for high-temperature environments?
    Yes, the STTH110UFY has a high junction temperature tolerance, making it suitable for high-temperature environments.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-221AA, SMB Flat Leads
Supplier Device Package:SMBflat
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STTH110UFY STTH112UFY
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1200 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1.9 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1200 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case DO-221AA, SMB Flat Leads DO-221AA, SMB Flat Leads
Supplier Device Package SMBflat SMBflat
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

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