STTH110UFY
  • Share:

STMicroelectronics STTH110UFY

Manufacturer No:
STTH110UFY
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A SMBFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH110UFY is a high-performance, ultrafast diode produced by STMicroelectronics. This component is designed using ST's advanced 1000 V planar technology, making it particularly suitable for various high-voltage applications. The diode is characterized by its low conduction losses, fast switching times, and high junction temperature tolerance, making it an ideal choice for modern electronic systems.

Key Specifications

ParameterValue
Repetitive Reverse Voltage (Vrrm Max)1000 V
Average Forward Current (IF(AV))1 A
Forward Voltage Drop (VF)1.7 V
Reverse Recovery Time (trr)75 ns
Peak Reverse Current (IRM)20 A
Package TypeDO-221AA (SMBflat)
Junction Temperature Range-40°C to 150°C

Key Features

  • Ultrafast recovery time of 75 ns, ensuring fast switching and minimal losses.
  • Low forward voltage drop of 1.7 V, reducing conduction losses.
  • High repetitive reverse voltage of 1000 V, suitable for high-voltage applications.
  • High junction temperature tolerance, allowing operation in demanding environments.
  • Compact DO-221AA (SMBflat) package, ideal for space-constrained designs.

Applications

The STTH110UFY is particularly suited for applications such as switching mode base drive and transistor circuits. It is also used in power supplies, DC-DC converters, and other high-frequency switching circuits where fast recovery and low losses are critical.

Q & A

  1. What is the maximum repetitive reverse voltage of the STTH110UFY?
    The maximum repetitive reverse voltage (Vrrm Max) is 1000 V.
  2. What is the average forward current rating of the STTH110UFY?
    The average forward current (IF(AV)) is 1 A.
  3. What is the forward voltage drop of the STTH110UFY?
    The forward voltage drop (VF) is 1.7 V.
  4. What is the reverse recovery time of the STTH110UFY?
    The reverse recovery time (trr) is 75 ns.
  5. What package type does the STTH110UFY use?
    The package type is DO-221AA (SMBflat).
  6. What is the junction temperature range of the STTH110UFY?
    The junction temperature range is -40°C to 150°C.
  7. What are the key applications of the STTH110UFY?
    The STTH110UFY is used in switching mode base drive and transistor circuits, power supplies, and DC-DC converters.
  8. Why is the STTH110UFY considered ultrafast?
    The STTH110UFY is considered ultrafast due to its low reverse recovery time of 75 ns.
  9. What technology is used in the STTH110UFY?
    The STTH110UFY uses ST's advanced 1000 V planar technology.
  10. Is the STTH110UFY suitable for high-temperature environments?
    Yes, the STTH110UFY has a high junction temperature tolerance, making it suitable for high-temperature environments.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-221AA, SMB Flat Leads
Supplier Device Package:SMBflat
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$0.80
201

Please send RFQ , we will respond immediately.

Similar Products

Part Number STTH110UFY STTH112UFY
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1200 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A 1.9 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1200 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case DO-221AA, SMB Flat Leads DO-221AA, SMB Flat Leads
Supplier Device Package SMBflat SMBflat
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STTH30RQ06WL
STTH30RQ06WL
STMicroelectronics
600 V, 30 A SOFT ULTRAFAST RECOV
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
RB751CS40,315
RB751CS40,315
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD882
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
TS944AIDT
TS944AIDT
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14SO
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC